Electronics 1 - Laboratory 3: “Transistors”

M e a s u r e m e n t p r o t o c o l / R e p o r t [125/125]

Team: Date: . . . . . . . . . . .
1. . . . . . . . . . . . . . . . . . . . . . . . . . . .
2. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Important note: In the Report, all performed operations, both graphical (e.g., on the plots and graphs) and
computational, MUST be precisely illustrated and described. Results not justified by such illustration and explanation
will not be accepted.

Part I. INVESTIGATION OF INTERNAL AND EXTERNAL CURRENTS OF A BIPOLAR JUNCTION

TRANSISTOR (BJT). [75]

Note: In the following tasks, the signs of the terminal currents are adopted for an NPN BJT transistor in
the normal active mode: the emitter current is positive when flowing out from the emitter terminal, and
the collector current is positive when flowing into the collector terminal.

Note: The actual current/voltage values sourced by the Source-Measure Unit (SMU) usually differ
slightly from those explicitly set by a user in the application software controls. For further data processing
and analysis, take the actual values measured by the SMU.

Each measurement may be added to a file separately. Print the file with the measurements and
attach it to the Report. Leave your file on the computer’s hard disk for further reference.

1. Measurements [10]

Using a computer-controlled measurement set-up, make the following measurements (BJT-EM.exe):

a) [1] measure the transistor terminal currents and voltages for the following conditions:

the collector junction in short-circuit: VBC = 0.0V; the emitter current value set at a first single value
IE = IE1 selected from the range from 1 mA to 5 mA; (first option in the Measurement type window)

IE1 = …………..
b) [1] measure the transistor terminal currents and voltages for the following conditions:

the emitter junction in short-circuit: VBE = 0.0V; the collector current value set at a first single value
IC = IC1 selected from the range from -1 mA to -5 mA; (2nd option in the Measurement type window)

IC1 = …………..
c) [1] Physical Sum: measure the transistor terminal currents and voltages for the same VBE voltage as
measured in a) and the same VBC voltage as measured in b). This measurement gives a “physical” sum of
the terminal currents from a) and b) with both junctions working - see table. (3rd option)

Note: Check if the SMU delivers the desired VBE & VBC voltages. If the difference exceeds 0.1 -1 mV, try
to correct it manually.

d) [1] Algebraic Sum: make an algebraic sum of the currents from a) & b) obtaining the sums of the
internal and external currents for the emitter and collector - see table.

e) [1] repeat the measurements of a) for another value of IE = IE2 from the given range
IE2 = …………..

f) [1] repeat the measurements of b) for another value of IC = IC2 from the given range
IC2 = …………..

g) [1] Physical Sum: repeat the measurements of c) for new VBE , VBC voltages, i.e., now as in e) and f)

h) [1] Algebraic Sum: make an algebraic sum of the currents from e) & f) as in d).

i) [1] measure the collector floating voltage VBCF with the collector junction opened at the emitter
current value set as in e):

IE = IE2; IC = 0.0; (4th option in the Measurement type window)

j) [1] measure the emitter floating voltage VBEF with the emitter junction opened at the collector current
value set as in f):

IC = IC2; IE = 0.0; (5th option in the Measurement type window)

Insert the results into the table:

NOTE: Into the table, insert the values measured (as written into the file), not the values literally set in
the application window.

BSX61 transistor

Subtask IE [A] IC [A] IB [A] VBE [V] VBC [V]

a)

b)

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 c) „Physical” sum:

d) Algebraic sum: --------- ---------

a) + b)
e)
f)
g) „Physical” sum:
h) Algebraic sum: --------- ---------
e) + f)
i) VBCF – measured
j) VBEF – measured

Task 4: [3] --------- --------- --------- ---------

VBCF – theoretical
Task 4: [3] --------- --------- --------- ---------
VBEF – theoretical

2. Internal and external currents [7x5 +5x2 =45

For each measurement indicated in the table below, draw the biasing scheme for the transistor (on the
transistor symbol), illustrate the current flows in the transistor: show the directions of the currents, and
give the values of the internal and external currents. For each case, explain the transistor’s state and the
operation of every junction (normal active/saturation/blocked; forward/reverse bias, etc.).

[1] [2] [2]

P. Biasing scheme Current flows in the Current components
for the transistor (use arrows to give the values of the current components
transistor (draw show the directions of the IE, IE tot = IE int + IE ext
a short circuit, IC, and IB currents)
open circuit, IC tot = IC int + IC ext
V>0, V<0, etc.)
a)

[5] IEtot = . . internal . . + . . external . . [A]

ICtot = . . internal . . + . . external . . [A]

[2] Describe the state of

the transistor and its
junctions:

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 b)

[5] IEtot = . . internal . . + . . external . . [A]

ICtot = . . internal . . + . . external . . [A]

[2] Describe the state of

the transistor and its
junctions:
d) From the algebraic sum

[5]
IEtot = . . internal . . + . . external . . [A]

ICtot = . . internal . . + . . external . . [A]

[2] Describe the state of

the transistor and its
junctions:
i) [5] ! Finding the internal&external currents would
require making additional measurements.
Describe them.
………………………………………….

………………………………………….

[2] Describe the state of

the transistor and its
junctions:
j) ! Finding the internal&external currents would
[5] require making additional measurements.
Describe them:
………………………………………….

………………………………………….

[2] Describe the state of

the transistor and its
junctions:

3. Determination of transistor’s parameters:  E, C, F, R, ES, CS. [14]

Based on the measurements and employing the Ebers-Moll model, determine the following:

a) the emission coefficients of the emitter and collector junctions:  E, C – using the measurements of
1a),b) and 1e),f).

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b) the current gain coefficients:  F, R, F: using the measurements of 1e),f).

c) the saturation currents ES, CS: using the measurements of 1a),b) or 1e),f).

Note: with correctly found emission coefficients, the values of ES, CS should not depend on if they were
determined from 1 a),b) or 1e), f)

Transistor BSX61
type/parameter

E

C

F

F

R

ES [A]

CS [A]

Calculations (perform all the necessary transformations and calculations explicitly):

……………………………………………………………………………………………………….

…………………………………………………………………………………………………….

……………………………………………………………………………………………………….

……………………………………………………………………………………………………….

……………………………………………………………………………………………………….

4. Floating voltages VBCF, VBEF across opened junctions [6]

Calculate the floating voltages VBCF and VBEF for the conditions as in the measurements in 1i) & j).

Insert the results into the table above and compare them with the measured voltages VBCF and VBEF.

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Part II. INVESTIGATION OF I-V CHARACTERISTICS OF A MOSFET TRANSISTOR [50]

1. [3] Measurements (application MOSFET.exe)

In the measurement application set the NPLC (number of power line cycles) to 5, and the maximum
current IDmax = 40 mA.
a) Measure the family of output characteristics of a MOSFET transistor, ID = f(VDS)|VGS=const for three
different gate voltages (step voltage) VGS1, VGS2, VGS3, (Num .of curves=3), with the step of the drain
voltage (sweep voltage) VDS =0.05V, and: VDSmin = 0V, VDSmax = 2V.

VGS1 == . . . . . . . VGS2 = . . . . . . . VGS3 = . . . . . . . . (to be provided by the teacher)

Note: the values of VGS voltages actually set by the apparatus when executing the measurement will be
slightly different than the values set in the application control panel window; for further processing take
the values actually measured (can be found in the data window or in the file after saving the
measurement
VGS1m == . . . . . . . VGS2m = . . . . . . . VGS3m = . . . . . . . . (actually set&measured by the apparatus)

b) Measure a family of transfer characteristics of the MOSFET transistor, ID = f(VGS)|VDS=const for two
values of the drain voltage (step voltage) VDS: 0.1V and 3V (Num .of curves=2), with the step of the gate
voltage (sweep voltage) VGS =0.05V, and: VGSmin = 0V, VGSmax = 2V. (Note: for 2N7000 transistor take
VGSmin = 1V, VGSmax = 2.7V)

c) Print the measured characteristics: ID = f(VDS)|VGS=const, ID = f(VGS)|VDS=const, as well as the family:

I D = f (VGS ) V = const
. (Select the plot to be printed from the list of choices at the bottom).
DS

Save the measurements into a file. Don’t print the file. Describe the printed plots, i.e., describe every individual
curve in the family – indicate the parameter voltage for which it was measured. Note: the set parameter (step)
voltage values may differ from the measured values. Use the measured ones. Refer to the file or the window in the
measurement application for the actual values.
2. [8] Threshold voltage

Find the transistor threshold voltage VT using two methods:

a) using the graph from 1b): ID = f(VGS)|VDS=const, i.e., directly from the transfer characteristics - this
approach is appropriate for the non-saturation region.

b) using the graph from 1c): I D = f (VGS ) V - this approach is for the saturation region.
DS =const

Important Note: in a) & b), select the appropriate curves and make correct linearizations (only
linearize the portions of the curves that are actually linear).

Important Note: The difference in VT values from a) and b) should not be big - the difference within 100
mV is acceptable; for task 4, take the average value.

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3. [4]  parameter

Based on the plot: I D = f (VGS ) V and using the linearization done in 2b), find the  parameter of
DS =const

the transistor.
Important Note: Select the characteristic measured in the saturation region;
ID
Indicate, both in the graph and in the table, the changes (deltas) of the voltage and the used to find
the slope of the straight line.

4. [3] Saturation drain voltage VDS sat

Using the obtained value of the threshold voltage VT, find the drain voltage VDS sat at the saturation border
and mark the borders between the non-saturation/saturation regions in the graph of the output
characteristics for every VGS voltage.

5. [4] Small-signal parameters gm, gds

dI D
Derive, step by step, the formulas for the output conductance gd = and the
dVDS VGS = const

dI D
transconductance g m = of the MOS transistor for both: the non-saturation and saturation
dVGS V DS = const

regions.
Non-saturation:
gd = ........................................................................................................................
gm = ........................................................................................................................
Saturation:
gd = ........................................................................................................................
gm = ........................................................................................................................

6. [8] Transconductance gm

a) Using the plot of the transfer characteristics, I D = f (VGS ) V for the saturation characteristic,
DS =const

determine the transconductance gm of the transistor graphically for a drain current value ID = 5 mA

b) Using the formula obtained in 5, calculate the theoretical value of the transconductance gm for the
same ID current value and compare it with the one obtained graphically.

7. [12] Output conductance gds

a) Using the plot of the output characteristic I D = f (VDS ) V = const

of 1a), determine the output
GS

conductance gd0 of the transistor in the linear (non-saturation) region (very low VDS voltages, for
example, up to 50 - 100 mV) graphically for all VGS values.

b) Using the formula obtained in 5, calculate the theoretical values of the gd0 and compare them with the
ones obtained graphically.

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 2a) [4] Threshold voltage (found according to d.1) VT [V] ......................

2b) [4] Threshold voltage (found according to d.2) VT [V] ......................

2a,b) Average value VT average [V] ......................

3) [4]  I D = ........ [A1/2]

VGSmin = ..... .[V] VGSmax = .........[V] VGS = ........[V]

........................
Slope = ........ [A1/2/V]

 parameter [ ]

4) [3] VDS sat1, for VGS1 [V]

........................
VDS sat2, for VGS2 [V]
........................
VDS sat3, for VGS3 [V]
........................

6a) [4] I D = ....... [A]

VGSmin = ..... [V]; VGSmax = ........ [V]; VGS = ........[V]

Slope = ........ [A/V]

........................
gm @5mA [S] found graphically

6b) [4]
gm @5mA [S] calculated ........................

7a) [6] @VGS1:

ID =........[A];VDSmin = ......[V];VDSmax = ....... [V];VDS = ....... [V]; gd0@VGS1 .......... [S]
@VGS2:
ID =........[A];VDSmin = ......[V];VDSmax = ....... [V];VDS = ....... [V]; gd0@VGS2 .......... [S]
@VGS2:
ID =........[A];VDSmin = ......[V];VDSmax = ....... [V];VDS = ....... [V]; gd0@VGS3 .......... [S]

7b) [6]
@VGS1: gd0@VGS1 .......... [S]

@VGS2: gd0@VGS2 .......... [S]

@VGS2: gd0@VGS3 .......... [S]

8. Comments & Conclusions: [8]

Describe the essential differences between BJT and MOSFET transistors. Consider the structure,
principle of operation, and modes of operation & application.

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 APPENDIX 1: Ebers-Moll model

I E = I ES F (VBE ) −  R I CS F (VBC )  V 
F (V ) = exp  −1
I C = −I CS F (VBC ) +  F I ES F (VBE )  NkT / q 

F (0 ) = 0
I B = I E − IC

The formula for the emission coefficient:

1 V2 − V1
N=
kT / q ln I 2 − ln I1
Formulas for the base-collector floating voltage, VBCF:
when using the value of VBE

kT  I ES  VBE  
VBCF = N C ln  F  exp − 1 + 1
q  I CS  N E kT / q  

or, optionally, when using the value of IE:

 
 
kT  IE 
VBCF = NC ln + 1
q  1 
 I CS  −   
  R
  F  
Formulas for the base-emitter floating voltage, VBEF are symmetrically similar (i.e., by exchanging the
junction parameters: gain coefficients (F,  R), saturation currents (IES,ICS), and the emission coefficients
(NE,NC)).