DISCRETE SEMICONDUCTORS

DATA SHEET

BLT81
UHF power transistor
Product specification 1996 May 09
Supersedes data of November 1992
Philips Semiconductors Product specification

UHF power transistor BLT81

FEATURES
• SMD encapsulation
• Gold metallization ensures excellent reliability.

handbook, halfpage 4
APPLICATIONS
• Hand-held radio equipment in the 900 MHz c
communication band.
b

DESCRIPTION
e
NPN silicon planar epitaxial transistor encapsulated in a
plastic SOT223 SMD package.
1 2 3
MAM043 - 1

PINNING - SOT223 Top view

PIN SYMBOL DESCRIPTION

1 e emitter
2 b base
3 e emitter
Fig.1 Simplified outline and symbol.
4 c collector

QUICK REFERENCE DATA

RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7).

f VCE PL Gp ηC
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
7.5 1.2 ≥6 ≥60
CW, class-B narrow band 900
6 1.2 typ. 6.5 typ. 77

1996 May 09 2
Philips Semiconductors Product specification

UHF power transistor BLT81

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 20 V
VCEO collector-emitter voltage open base − 9.5 V
VEBO emitter-base voltage open collector − 2.5 V
IC collector current (DC) − 500 mA
IC(AV) average collector current − 500 mA
Ptot total power dissipation Ts = 110 °C; note 1 − 2 W
Tstg storage temperature −65 +150 °C
Tj operating junction temperature − 175 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ptot = 2 W; Ts = 110 °C; note 1 32 K/W

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

MRC094
1
handbook, halfpage

IC
(A)

10−1
1 10 102
VCE (V)

Ts = 110 °C.

Fig.2 DC SOAR.

1996 May 09 3
Philips Semiconductors Product specification

UHF power transistor BLT81

CHARACTERISTICS
Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; IC = 1 mA 20 − − V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 9.5 − − V
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 2.5 − − V
ICES collector leakage current VCE = 10 V; VBE = 0 − − 0.1 mA
hFE DC current gain VCE = 5 V; IC = 300 mA; note 1; 25 − −
Cc collector capacitance VCB = 7.5 V; IE = ie = 0; f = 1 MHz; − 2.7 4 pF
Cre feedback capacitance VCE = 7.5 V; IC = 0; f = 1 MHz − 1.7 3 pF

Note
1. Measured under pulsed conditions: tp ≤ 200 µs; δ ≤ 0.02.

MRC090 MRC086
100 6
handbook, halfpage handbook, halfpage
hFE
Cc
80 (pF)

4
60

40
2

20

0 0
0 100 200 300 400 0 2 4 6 8 10
IC (mA) VCB (V)

VCE = 7.5 V; tp ≤ 200 µs; δ ≤ 0.02; Tj = 25 °C. IE = ie = 0; f = 1 MHz; Tj = 25 °C.

Fig.3 DC current gain as a function of collector Fig.4 Collector capacitance as a function of

current; typical values. collector-base voltage; typical values.

1996 May 09 4
Philips Semiconductors Product specification

UHF power transistor BLT81

APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see note 1 and Fig.7).

f VCE PL Gp ηC
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
≥6 ≥60
7.5 1.2
CW, class-B narrow band 900 typ. 8 typ. 77
6 1.2 typ. 6.5 typ. 77

Note
1. Ts is the temperature at the soldering point of the collector pin.

Ruggedness in class-AB operation

The BLT81 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the
following conditions: f = 900 MHz; VCE = 9 V; PL = 1.2 W; Ts ≤ 60 °C.

MRC088 MRC093
10 100 2.5
handbook, halfpage (1) handbook, halfpage
Gp Gp ηC PL
(dB) (2) (%) (W)
ηC
8 80 2.0
(4) (1)

(3)
6 60 1.5
(2)

4 40 1.0

2 20 0.5

0 0 0
0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500
PL (W) PIN (mW)

Class-B; f = 900 MHz; Ts ≤ 60 °C. Class-B; f = 900 MHz; Ts ≤ 60 °C.

(1) VCE = 7.5 V. (3) VCE = 7.5 V. (1) VCE = 7.5 V. (2) VCE = 6 V.
(2) VCE = 6 V. (4) VCE = 6 V.

Fig.5 Power gain and collector efficiency as Fig.6 Load power as a function of input
functions of load power; typical values. power; typical values.

1996 May 09 5
Philips Semiconductors Product specification

UHF power transistor BLT81

Test circuit information

handbook, full pagewidth

C2 C4 C6 C8 C10
C1 L1 L4 L5 L6 L8 L10 C14
50 Ω 50 Ω
input output
DUT
C3 L2 C5 C7 C11 C13

L7

L9
R1 L3
VCC

R2
C9 C12
MEA899

Fig.7 Common emitter test circuit for class-B operation at 900 MHz.

1996 May 09 6
Philips Semiconductors Product specification

UHF power transistor BLT81

List of components used in test circuit (see Figs 7 and 8)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C14 multilayer ceramic chip capacitor; note 1 100 pF
C2 multilayer ceramic chip capacitor; note 1 3 pF
C3, C5, C11, C13 film dielectric trimmer 1.4 to 5.5 pF 2222 809 09004
C4 multilayer ceramic chip capacitor; note 1 5.6 pF
C6, C7, C10 multilayer ceramic chip capacitor; note 1 5.1 pF
C8 multilayer ceramic chip capacitor; note 1 3.6 pF
C9 multilayer ceramic chip capacitor; note 1 220 pF
C12 multilayer ceramic chip capacitor; 1 nF
L1 stripline; note 2 50 Ω length 26.6 mm
width 4.85 mm
L2 10 turns enamelled 0.6 mm copper wire 250 nH int. dia. 4.5 mm
leads 2 × 5 mm
L3, L9 grade 3B Ferroxcube wideband 4312 020 36640
HF choke
L4 stripline; note 2 50 Ω length 18 mm
width 4.85 mm
L5 stripline; note 2 75 Ω length 3.5 mm
width 2.5 mm
L6 stripline; note 2 50 Ω length 10 mm
width 4.85 mm
L7 4 turns enamelled 0.6 mm copper wire 65 nH int. dia. 4.5 mm
leads 2 × 5 mm
L8 stripline; note 2 50 Ω length 15 mm
width 4.85 mm
L10 stripline; note 2 50 Ω length 24.6 mm
width 4.85 mm
R1, R2 metal film resistor 10 Ω, 0.25 W

Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2); thickness
1⁄ "; thickness of the copper sheet 35 µm.
16

1996 May 09 7
Philips Semiconductors Product specification

UHF power transistor BLT81

140
handbook, full pagewidth

strap strap

80

rivets
(14x)

strap mounting strap

screws
(8x)

VCC
L9
L3

C9 C12
L2 R2
R1
C2 C4 C6 L7 C10

C1 L1 L4 L5 L6 L8 L10 C14

C3 C5 C7 C8 C11 C13

MEA898

Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads.

Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7.

1996 May 09 8
Philips Semiconductors Product specification

UHF power transistor BLT81

MRC091 MRC092
10 20
handbook, halfpage handbook, halfpage
Zi ZL RL
(Ω) (Ω)
8 16

ri
6 12

4 xi 8

XL
2 4

0 0
800 840 880 920 960 1000 800 840 880 920 960 1000
f (MHz) f (MHz)

Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C. Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C.

Fig.9 Input impedance as a function of frequency Fig.10 Load impedance as a function of frequency
(series components); typical values. (series components); typical values.

MRC089
10
handbook, halfpage
Gp
(dB)
8

6
handbook, halfpage

4
Zi
ZL MBA451
2

0
800 840 880 920 960 1000
f (MHz)

Class-B; VCE = 7.5 V; PL = 1.2 W; Ts ≤ 60 °C.

Fig.11 Power gain as a function of

frequency; typical values. Fig.12 Definition of transistor impedance.

1996 May 09 9
Philips Semiconductors Product specification

UHF power transistor BLT81

PACKAGE OUTLINE

handbook, full pagewidth 0.95

0.85

S seating plane 0.1 S

0.32
0.24 6.7
6.3
3.1 B 0.2 M A
2.9
4
A

0.10
0.01
3.7 7.3
3.3 6.7

16 o 16
o
max

1 2 3
o
10 0.80
1.80 max 2.3 0.1 M B
0.60
max (4x) MSA035 - 1
4.6

Dimensions in mm.

Fig.13 SOT223.

1996 May 09 10
Philips Semiconductors Product specification

UHF power transistor BLT81

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 May 09 11
Philips Semiconductors – a worldwide company
Argentina: see South America Portugal: see Spain
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Romania: see Italy
Tel. (02) 805 4455, Fax. (02) 805 4466 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. (65) 350 2000, Fax. (65) 251 6500
Tel. (01) 60 101-1256, Fax. (01) 60 101-1250 Slovakia: see Austria
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Slovenia: see Italy
Volodarski Str. 6, 220050 MINSK, South Africa: S.A. PHILIPS Pty Ltd.,
Tel. (172) 200 733, Fax. (172) 200 773 195-215 Main Road Martindale, 2092 JOHANNESBURG,
Belgium: see The Netherlands P.O. Box 7430 Johannesburg 2000,
Brazil: see South America Tel. (011) 470-5911, Fax. (011) 470-5494
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, South America: Rua do Rocio 220 - 5th floor, Suite 51,
51 James Bourchier Blvd., 1407 SOFIA, CEP: 04552-903-SÃO PAULO-SP, Brazil,
Tel. (359) 2 689 211, Fax. (359) 2 689 102 P.O. Box 7383 (01064-970),
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (011) 821-2333, Fax. (011) 829-1849
Tel. (800) 234-7381, Fax. (708) 296-8556 Spain: Balmes 22, 08007 BARCELONA,
Chile: see South America Tel. (03) 301 6312, Fax. (03) 301 4107
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, Sweden: Kottbygatan 7, Akalla. S-16485 STOCKHOLM,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. (0) 8-632 2000, Fax. (0) 8-632 2745
Tel. (852) 2319 7888, Fax. (852) 2319 7700 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Colombia: see South America Tel. (01) 488 2211, Fax. (01) 481 77 30
Czech Republic: see Austria Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Denmark: Prags Boulevard 80, PB 1919, DK-2300 Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
COPENHAGEN S, Tel. (032) 88 2636, Fax. (031) 57 1949 TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444
Finland: Sinikalliontie 3, FIN-02630 ESPOO, Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
Tel. (358) 0-615 800, Fax. (358) 0-61580 920 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
France: 4 Rue du Port-aux-Vins, BP317, Tel. (66) 2 745-4090, Fax. (66) 2 398-0793
92156 SURESNES Cedex, Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (01) 4099 6161, Fax. (01) 4099 6427 Tel. (0212) 279 2770, Fax. (0212) 282 6707
Germany: P.O. Box 10 51 40, 20035 HAMBURG, Ukraine: PHILIPS UKRAINE,
Tel. (040) 23 53 60, Fax. (040) 23 53 63 00 2A Akademika Koroleva str., Office 165, 252148 KIEV,
Greece: No. 15, 25th March Street, GR 17778 TAVROS, Tel. 380-44-4760297, Fax. 380-44-4766991
Tel. (01) 4894 339/4894 911, Fax. (01) 4814 240 United Kingdom: Philips Semiconductors LTD.,
Hungary: see Austria 276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Tel. (0181) 730-5000, Fax. (0181) 754-8421
Dr. Annie Besant Rd. Worli, BOMBAY 400 018 United States: 811 East Arques Avenue, SUNNYVALE,
Tel. (022) 4938 541, Fax. (022) 4938 722 CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556
Indonesia: see Singapore Uruguay: see South America
Ireland: Newstead, Clonskeagh, DUBLIN 14, Vietnam: see Singapore
Tel. (01) 7640 000, Fax. (01) 7640 200 Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180, Tel. (381) 11 825 344, Fax. (359) 211 635 777
Tel. (03) 645 04 44, Fax. (03) 648 10 07
Italy: PHILIPS SEMICONDUCTORS,
Piazza IV Novembre 3, 20124 MILANO,
Tel. (0039) 2 6752 2531, Fax. (0039) 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, Internet: http://www.semiconductors.philips.com/ps/
TOKYO 108, Tel. (03) 3740 5130, Fax. (03) 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, For all other countries apply to: Philips Semiconductors,
Yongsan-ku, SEOUL, Tel. (02) 709-1412, Fax. (02) 709-1415 Marketing & Sales Communications, Building BE-p,
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
SELANGOR, Tel. (03) 750 5214, Fax. (03) 757 4880 Fax. +31-40-2724825
Mexico: 5900 Gateway East, Suite 200, EL PASO, SCDS48 © Philips Electronics N.V. 1996
TEXAS 79905, Tel. 9-5(800) 234-7831, Fax. (708) 296-8556
Middle East: see Italy All rights are reserved. Reproduction in whole or in part is prohibited without the
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, prior written consent of the copyright owner.
Tel. (040) 2783749, Fax. (040) 2788399 The information presented in this document does not form part of any quotation
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, or contract, is believed to be accurate and reliable and may be changed without
Tel. (09) 849-4160, Fax. (09) 849-7811 notice. No liability will be accepted by the publisher for any consequence of its
Norway: Box 1, Manglerud 0612, OSLO, use. Publication thereof does not convey nor imply any license under patent- or
Tel. (022) 74 8000, Fax. (022) 74 8341 other industrial or intellectual property rights.
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC,
MAKATI, Metro MANILA, Printed in The Netherlands
Tel. (63) 2 816 6380, Fax. (63) 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, 127061/1200/02/pp12 Date of release: 1996 May 09
Tel. (022) 612 2831, Fax. (022) 612 2327 Document order number: 9397 750 00835
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

NXP:
BLT81 T/R BLT81,115