STD1703L

N-CHANNEL 30V - 0.038Ω - 17A - DPAK

STripFET™ II MOSFET

TYPE VDSS RDS(on) ID

STD1703L 30 V <0.05 Ω 17 A
■ TYPICAL RDS(on) = 0.038 Ω
■ APPLICATION ORIENTED 3
CHARACTERIZATION 1

DPAK

DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique “Single Feature Size™” INTERNAL SCHEMATIC DIAGRAM
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.

APPLICATIONS
■ DC-DC CONVERTERS

■ LINEAR POST REGULATION

ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STD1703LT4 D1703L DPAK TAPE & REEL

April 2004 1/10

STD1703L

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 30 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuous) at TC = 25°C 17 A
ID Drain Current (continuous) at TC = 100°C 12 A
IDM (
) Drain Current (pulsed) 68 A
PTOT Total Dissipation at TC = 25°C 20 W
Derating Factor 0.13 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 6 V/ns
EAS (2) Single Pulse Avalanche Energy 200 mJ
Tstg Storage Temperature –65 to 175 °C
Tj Max. Operating Junction Temperature 175 °C
(● ) Pulse width limited by safe operating area
(1) ISD ≤17A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
(2) Starting Tj=25°C, ID=11A, VDD=15V

THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 7.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 275 °C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Drain-source
V(BR)DSS ID= 250 µA, VGS= 0 30 V
Breakdown Voltage
IDSS Zero Gate Voltage VDS= Max Rating 1 µA
Drain Current (VGS = 0)
VDS= Max Rating, TC= 125°C 10 µA
IGSS Gate-body Leakage VGS = ± 15V ±100 nA
Current (VDS = 0)

ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 1 V
RDS(on) Static Drain-source On VGS = 10V, ID = 8.5 A 0.038 0.05 Ω
Resistance
VGS = 5 V, ID = 8.5 A 0.045 0.06 Ω

DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 7 S
ID =11A
Ciss Input Capacitance VDS= 25V, f= 1 MHz, VGS= 0 330 pF
Coss Output Capacitance 90 pF
Crss Reverse Transfer 40 pF
Capacitance

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 STD1703L

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 15V, ID = 8.5A 11 ns
RG = 4.7Ω VGS = 4.5V
tr Rise Time (see test circuit, Figure 3) 100 ns

Qg Total Gate Charge 6.5 9 nC

VDD = 24V, ID = 17A,
Qgs Gate-Source Charge 3.6 nC
VGS = 10V nC
Qgd Gate-Drain Charge 2

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off-Delay Time VDD = 15V, ID = 8.5A, 25 ns
tf Fall Time RG = 4.7Ω, VGS = 4.5V 22 ns
(see test circuit, Figure 3)
tr(off) Off-voltage Rise Time Vclamp =24V, ID =17A 22 ns
tf Fall Time RG = 4.7Ω, VGS = 4.5V 55 ns
tc Cross-over Time (see test circuit, Figure 5) 75 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 17 A
ISDM (1) Source-drain Current (pulsed) 68 A
VSD (2) Forward On Voltage ISD = 17A, VGS = 0 1.5 V
trr Reverse Recovery Time ISD = 17A, di/dt = 100A/µs, 30 ns
Qrr Reverse Recovery Charge VDD = 15V, Tj = 150°C 18 nC
IRRM Reverse Recovery Current (see test circuit, Figure 5) 1.2 A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.

Safe Operating Area Thermal Impedence

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STD1703L

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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 STD1703L

Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature

Source-drain Diode Forward Characteristics

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STD1703L

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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 STD1703L

TO-252 (DPAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.213

C 0.45 0.60 0.018 0.024

C2 0.48 0.60 0.019 0.024

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.252 0.260

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.398

L2 0.8 0.031

L4 0.60 1.00 0.024 0.039

o o o
V2 0 8 0 0o

P032P_B

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STD1703L

TO-252 (DPAK) MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 2.20 2.40 0.087 0.094

A1 0.00 0.127 0.00 0.005

B 1.350 1.650 0.053 0.065

b 0.50 0.70 0.020 0.028

b1 0.70 0.90 0.028 0.035

c 0.430 0.580 0.017 0.023

c1 0.430 0.580 0.017 0.023

D 6.350 6.650 0.250 0.262

D1 5.20 5.40 0.205 0.213

E 5.40 5.70 0.213 0.224

e 2.30 0.091

e1 4.50 4.70 0.177 0.185

L 9.50 9.90 0.374 0.390

L1 2.550 2.900 0.10 0.114

L2 1.40 1.780 0.055 0.070

L3 0.35 0.65 0.014 0.026

V 3.80 REF 0.150 REF

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 STD1703L

TO-252 (DPAK) MECHANICAL DATA

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STD1703L

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