Journal of ELECTRONIC MATERIALS, Vol. 47, No.

5, 2018
https://doi.org/10.1007/s11664-018-6075-2
Ó 2018 The Minerals, Metals & Materials Society

Nanoscale High-k Dielectrics for Junctionless Nanowire

Transistor for Drain Current Analysis

J. CHARLES PRAVIN,1 P. PRAJOON,2

FLAVIA PRINCESS NESAMANIA,3 G. SRIKESH,4
P. SENTHIL KUMAR,5 and D. NIRMAL 3,6

1.—VLSI Research Lab, Department of Electronics and Communication Engineering, Kalasa-

lingam Academy of Research and Education, Krishnankoil, Tamil Nadu, India. 2.—Department of
Electronics and Communication Engineering, Providence College of Engineering, Chengannur,
Kerala, India. 3.—VLSI Laboratory, Department of Electronics and Communication Engineering,
Karunya Institute of Technology and Sciences, Coimbatore, Tamil Nadu, India. 4.—Material
Chemistry Laboratory, Department of Chemistry, Karunya University, Coimbatore, Tamil Nadu,
India. 5.—Department of Physics, KPR Institute of Engineering and Technology, Coimbatore,
Tamil Nadu, India. 6.—e-mail: dnirmalphd@gmail.com

Hafnium oxide (HfO2) nanoparticles were prepared by a chemical precipita-

tion method and its physical and electrical properties were investigated. HfO2
thin films were prepared via a dip-coating method using the synthesized HfO2
nanoparticles. The crystallinity and resistivity of both prepared thin films
were analysed by x-ray diffraction and impedance analyser. The crystalline
size was found to be 8 nm and 13 nm for HfO2 and SiO2 thin films, respec-
tively. The electrical (bulk) resistance was calculated by fitting the complex
impedance plane using z-view software, and was found to be 2.15 9 107 X for
HfO2, whereas it was found to be 3.6 9 105 X for SiO2 thin films. Junctionless
nanowire transistors were implemented using HfO2 dielectric and perfor-
mance was compared to SiO2 gate dielectric. The results revealed that nano-
sized HfO2 proves to be a better gate dielectric material than conventional
gate dielectrics. Thus, the nano-sized HfO2 based junctionless transistor de-
vice is more suitable for future low power applications.

Key words: Electronics device materials, high-k gate dielectrics materials,

material characterization, device simulation

INTRODUCTION poor performance of MOSFET devices.1 To rectify

these issues, many researchers are trying alternative
The conventional SiO2 based gate dielectric has
metal oxides such as Si3N4,2,3 Al2O3 and4,5 HfO2 as
shown good performance in metal oxide semiconductor
gate dielectrics. In recent years, there is increasing
field effect transistor (MOSFET) devices for many
demand in the semiconductor industry for compounds
years. However the scaling limit of the SiO2 gate
based on hafnium because of its high-k dielectric
dielectric is a major hurdle in applying this technology
constant, high melting point and its large refractive
in future applications. Moreover, the gate leakage and
index.6 Among the alternative metal oxides, HfO2 has
the short channel effects have been considered serious
received more attention than SiO2, to overcome the
issues in MOSFET devices due to the very low scaling
bottlenecks of MOSFET devices, due to its high
limit (less than 10 nm) they impose. Generally, when
dielectric constant of 23, higher permittivity, high
the thickness of the gate dielectric increases, the
chemical stability, appropriate band gap, high thermal
leakage current decreases exponentially, leading to
stability and reportedly lower electron tunnelling.7
However, most of the research focuses specifically on
the chemical interface and properties of HfO2 by
(Received May 16, 2017; accepted January 5, 2018; changing the crystal structure by varying temperature.
published online February 12, 2018)

2679
2680 Pravin, Prajoon, Nesamania, Srikesh, Senthil Kumar, and Nirmal

HfO2 exists in three low pressure crystalline phases. The silicon substrate wafer was taken and heated
The first is monoclinic, the most reliable and thermo- in the presence of oxygen at temperature of about
dynamically stable phase at ambient condition. At 400°C for about 3 h, resulting in the formation of
temperatures of 1700°C and at 2200°C, HfO2 trans- silicon dioxide.
forms into its tetragonal and cubic phases, respec-
tively.8 HfO2 is also a commonly and highly indexed Materials Characterization
coating material for optical components,9 and is used in
The characterization of the synthesized HfO2 was
heat resistant sensors10 and photo luminance mate-
carried out with a Shimadzu x-ray diffraction (XRD)
rial,11 mainly because of its transparent spectral range
6000 x-ray diffractometer using Cu-Ka radiation. A
from infrared to ultraviolet, thermal stability and
Shimadzu IR Prestige-21 model fourier transform
relatively wide band gap energy.
infra-red (FTIR) spectrometer in the range of 4000–
In the present paper, we have synthesized HfO2
400 cm1 was used to record Fourier transform
nanoparticles using a precipitation method. The
infra-red (FTIR) spectra. The Malvern particle size
synthesized HfO2 is characterised with scanning
analyser which uses triple distilled water as a
electron microscopy (SEM), energy dispersive x-ray
medium was used to measure particle size. A JEOL
spectroscopy (EDX), x-ray diffraction (XRD), parti-
Model JSM-6360 scanning electron microscope was
cle size analysis (PSA) and fourier transform infra-
used to study the structural morphology, and atomic
red (FTIR) spectroscopy. The comparison is also
weight percentage of the elements was found by
made with conventional SiO2 gate dielectrics. We
energy dispersive x-ray spectroscopy (EDAX) anal-
correlate the effects of crystallite size, bulk resis-
ysis. Impedance analysis was done by using a
tance and dielectric constant of the gate dielectric
Solartron SI 1260 impedance/gain phase analyzer
material to the leakage or off current of the
for the calculation of bulk and grain resistance.
junctionless transistor device. The comparative
Additionally, morphological characteristics of the
study of leakage current is made for semiconductor
samples were also studied exhaustively by high
devices such as junctionless nanowire transistors
resolution transmission electron microscopy (HR-
with HfO2 and SiO2 as gate dielectrics. We confirm
TEM), using a JEOL JEM 2100 device.
that HfO2 is the best alternative to SiO2 in junc-
tionless nanowire transistors, by virtue of its struc-
RESULTS AND DISCUSSION
tural, morphological and electrical properties.
X-ray Diffraction (XRD) Analysis
Figure 1a shows the x-ray diffraction (XRD) pat-
EXPERIMENTAL METHODS
tern of the pure phase HfO2 nanoparticles prepared
Materials Used via the precipitation method. The obtained HfO2
nanoparticles show the polycrystalline monoclinic
The chemicals hafnium chloride (98.5%, Sigma-
phase, which is compared with the reported stan-
Aldrich), sodium hydroxide (Loba Chemie) and sili-
dard JCPDS data for HfO2 (JCPDS card no: 34-
con wafers were used without further purification.
0104). The strong diffraction 2h peaks of 28.48°,
31.67°, and 34.97° correspond to the indexed plane
Synthesis of Hafnium Dioxide and SiO2 on
of axes (111), (111) and (200), respectively. No other
Wafer
impurities were found along with HfO2. An increase
In this research work, chemical a precipitation of about 500°C in the annealing temperature results
method is followed by a calcination process for the in the pure crystalline phase of monoclinic HfO2,
preparation of HfO2 nanoparticles. The aqueous along with the amorphous phase.12 The peaks
solution contained 0.1 M of Hafnium tetrachloride obtained confirm the presence of the monoclinic
which was added dropwise into a 0.4 M aqueous phase.
solution of sodium hydroxide. The PH was well In Fig. 1b, the x-ray diffraction (XRD) pattern of
maintained above 10 during this reaction. The the pure silicon substrate shows the high intensity
resultant precipitate was further centrifuged at peak at 2h  69° corresponding to the (400) plane
2400 rpm with double distilled water and dried (JCPDS card no: 89-5012). After annealing, the
under 100°C for 1 h. The resultant material was intensity of the (400) plane becomes suppressed.
further introduced into a calcination process by two The presence of the broad amorphous peak around
steps. Annealing was performed at 250°C and 2h  26° corresponds to the (011) plane, confirming
repeated at 500oC for the pure crystallinity phase the formation of the SiO2 compounds (JCPDS card
of HfO2 nanoparticles. no: 88-2487). From the x-ray diffraction (XRD)
pattern (Fig. 1a and b), no extra peak is detected.
Room Temp
HfCl4 þ 4NaOH ! Hf ðOHÞ4 þ 4NaCl This shows the phase pure formation of HfO2 and
SiO2 compounds. The crystallite sizes of the
Heated ð100;200 and 500  CÞ obtained samples are calculated by using the Scher-
Hf ðOHÞ4 ! HfO2 þ 2H2 O rer equation from (1) as follows:13
Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis 2681

kk
D¼ ; ð1Þ
b cos h
where k is the Scherrer constant (k = 0.9), k is the
wavelength (k = 1.54), b is the full width half
maxima (FWHM) and h is the Bragg’s angle. The
average crystallite size of the prepared HfO2 and
SiO2 compounds were found to be 8 nm and 13 nm,
respectively.

Morphological Analysis
Figure 2a and b show the scanning electron
microscopy (SEM) image and particle size distribu-
tion of HfO2 particles.
From the scanning electron microscopy (SEM)
image, it is clear that HfO2 particles have both
primary and secondary particles on the surface. The
presence of both particles is also confirmed by the
particle size distribution spectra. The average size
of the primary particles was found to be 100–
130 nm, whereas the average size of the secondary
particle was found to be in the range of 20–40 nm
with agglomeration. An energy dispersive x-ray
spectroscopy (EDX) spectrum is shown in Fig. 3.
Further, EDX analyses were performed for the
confirmation of the elements (Hf and O) present in
the prepared compounds; it shows the presence of
hafnium and oxygen. No other impurities are
detected in the sample. Fourier transform infra-
red (FTIR) was used in order to confirm the metal
oxide bond of HfO2.
The particle size/shape and d-spacing of the
sample HfO2 was investigated by transmission
electron microscopy (TEM) and high resolution
transmission electron microscopy (HRTEM) studies;
Fig. 1. X-ray diffraction (XRD) pattern for (a) HfO2 Nanoparticles (b)
Si-wafer and SiO2 wafer.
the images are shown in Fig. 4. In Fig. 4a clear
polyhedral shapes can be seen and the particle sizes

Fig. 2. (a) scanning electron microscopy (SEM) micrograph (scale: 1 lm, mag: 920,000) and (b) particle size distribution spectra of HfO2
material.
2682 Pravin, Prajoon, Nesamania, Srikesh, Senthil Kumar, and Nirmal

are in the nanometer range. High resolution trans- H–O–H bending mode and is indicative of the
mission electron microscopy (HRTEM) reveals presence of molecular water in the samples. The
(Fig. 4b) apparent lattice fringes of 0.28 nm for peak near 2500 cm1 is due to the presence of
prepared HfO2 compounds, indexed to the lattice dissolved or atmospheric CO2 in the samples. A
spacing of the (111) plane. SAED pattern (Fig. 4c) broad band arising at 3419.94 cm1 is assigned to
confirms the formation of polycrystalline HfO2 nano O–H stretching vibration, du to the nanoparticles
particles and matches with the x-ray diffraction physically absorbing atmospheric moisture.14,15
(XRD) results.
Electrochemical Characterisation
Fourier Transform Infra-red (FTIR) Analysis
AC Impedance Analysis
Figure 5 shows the standard Fourier transform
infra-red FTIR spectrum obtained for the prepared The Nyquist plots of HfO2 and SiO2 thin films for the
HfO2 nanoparticles. The FTIR spectrum identifies frequency range of 0.1 Hz–1 MHz with AC amplitude
the formation of crystalline metal oxide bond vibra- 0.1 V, taken at room temperature (303 K), are shown
tion and also identifies any other adsorbed species in Fig. 6a and b, respectively. The complex impedance
on the surface of the nanoparticles. This analysis plane of HfO2 thin films is found to have two over-
was done using the KBr method at room tempera- lapped semicircles at high and low frequency, whereas
ture. The peaks that appear at 525 cm1 and the complex plane of SiO2 thin films shows overlap-
759.02 cm1 can be attributed to metal–oxygen ping of one semicircular arc at high frequency along
(i.e. Hf–O) vibrations which indicate the monoclinic with a low frequency semicircular region. This shows
phase of HfO2. The peak around 1339.02 cm1 may the different polarization mechanisms within the
be attributed to the C–H in-plane bending modes in sample.16 The higher frequency semicircular beha-
the sample. The peak at 1600 cm1 is attributed to viour is due to the passage of charges within the grain
region (parallel combination of bulk resistance (Rb)
and bulk capacitance (Cb)). The low frequency semi-
circular region is attributed to the parallel combina-
tion of grain boundary resistance and capacitance.
Absence of spikes at very low frequency suggests
negligible electrode polarization in the sample. The
bulk and grain boundary resistance are calculated by
fitting the plot using Z-view software and the corre-
sponding equivalent circuit, as shown in the insets of
Fig. 6a and b.
The fit values are tabulated in Table I. The
table clearly reveals that HfO2 thin films show
much higher electrical resistance (both grain and
grain boundary) than SiO2 thin films. From this
result, it is expected that the HfO2 thin film based
MOSFET device will deliver very low leakage
current compared to a SiO2 thin film based device
Fig. 3. EDX spectra of HfO2.
on scaling of the device. The dielectric constant

Fig. 4. HRTEM images of HfO2 nanoparticles. (a) TEM image of HfO2 Nano particles (Scale: 20 nm), Shape: Polyhedral, (b) HRTEM image of
HfO2 Nano particles (Interplanar distance of 111 plane: 0.28 nm) and (c) SAED pattern (Polycrystalline monoclinic phase).
Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis 2683

value was obtained from Logx versus e (dielectric

constant) plot and given in Table II.

Optical Study (UV Visible Spectroscopy)

Figure 7a shows the optical absorbance spec-
troscopy of the HfO2 nanoparticles. The material
shows strong absorption in 321 nm and 208 nm.
Using absorption spectra, the band gap was calcu-
lated through Kulbelka Monk function.17 The calcu-
lated band gap is found to be 5.98 eV, as shown in the
Fig. 7b, which is in good agreement with earlier
results. The band gap obtained experimentally is
included in Table II and used in the device simulation.
Figure 8 shows the reflectance spectra of prepared
HfO2 nanoparticles. Using this, the refractive index is
Fig. 5. FTIR Spectra of HfO2 nanoparticles.
calculated through the following expression.
pffiffiffiffi
1þ R
n¼ pffiffiffiffi ð2Þ
1 R

From (2) n is the refractive index and R repre-

sents reflectance. The refractive index is calculated
to be 2.4, as given in the Table II, which is in good
agreement with previous results.
This value has been used in the parameter file for
forming the HfO2 gate dielectric in our device
simulation. The parameters for HfO2 gate dielectric
obtained experimentally are incorporated in the
technology computer aided design (TCAD) simula-
tion tool for simulating the HfO2 based junctionless
nanowire transistor device (Fig. 9).

DEVICE IMPLEMENTATION
One of the major applications of nano-size HfO2 is
that it can be used as an alternative material for
SiO2 as gate oxide in MOSFET devices. A junctionless
nanowire transistor has been used for this study. The
device has no junction, with the same type and
concentration of doping throughout the device’s active
region from source to drain. The junctionless nano-
wire transistor is discussed in Refs. 18–21. In this
device, the conventional gate oxide SiO2 has been
replaced with HfO2 and its leakage current measured.
The Sentaurus technology computer aided design
(TCAD) simulation tool was used, employing physical
models such as a band gap narrowing model, a
temperature dependant carrier transport model and
Fig. 6. (a) Nyquist plot of HfO2 thin films, (b) Nyquist plot of SiO2 thin quantum models. Auger, Shockley–Read–Hall (SRH)
films. and radioactive recombination were included for
leakage current analysis.

Device Structure and Implementation

The 3D view of the structure shown in Fig. 9 was
Table I. Comparison of Z-view fitted resistance
values taken as given in Ref. 19. In this structure, the
device active region is in the top of the buried oxide
Material compounds RB (ohm) RGB (ohm) layer. The dimensions of the device were followed
as per Ref. 19. The doping concentration was taken
HfO2 2.15 9 107 3.8 9 107 as 3 9 1019 cm3. The work function difference
SiO2 3.6 9 105 7.04 9 105 between gate dielectric and silicon region depletes
2684 Pravin, Prajoon, Nesamania, Srikesh, Senthil Kumar, and Nirmal

Table II. Parameters of HfO2 and SiO2 gate

dielectric materials
HfO2 experimental
Sl. no Parameters SiO2 value

1 Dielectric constant 3.934 22.8

2 Band gap (eV) 933 5.98
5 Refractive index 1.431 2.4

Fig. 8. Optical reflectance spectra of HfO2 Nanoparticles.

Fig. 9. Structure of junction less transistor.

for alternative materials with high-k dielectric con-

stant; HfO2 is found to be a good choice. The
importance of high-k dielectrics such HfO2 is given
in Refs. 26 and 27, and it also has a wide range of low
power applications.28 The essential parameters
required to simulate a junctionless transistor with
HfO2 gate dielectric were obtained, as shown in
Table II, from experimental calculation, which has
Fig. 7. (a) Optical absorption spectra of HfO2 nanoparticles (b)
better agreement with the previous reports.24,29–35
Optical band gap spectra of HfO2 nanoparticles. Table II shows the parameters of HfO2 gate
dielectric material which were obtained experimen-
tally and used in this analysis. From the table it is
the active region of the device. The gate voltage clear that HfO2 has a high dielectric constant and
above the threshold voltage given causes the device an appropriate band gap, which may decrease
conduct. leakage.
The large band gap with good conduction and Figure 10a shows the drain current variation with
valence band offsets of SiO2 of about 9 eV have made respect to gate source voltage. Here, the simulated
it a good choice for gate dielectric for many years. result for the device with SiO2 as gate dielectric is
Recently, due to the continuous scaling of the validated with the experimental results from Ref.
devices, the oxide thickness has become very low, 19. The drain current variation with respect to gate
on the order if of about 2 nm. This has led to voltage is also given. Drain current analysis is
increases in tunnelling leakage current, which in performed for the implemented device. Generally,
turn reduces device reliability and elevates the leakage current plays a major role in nano-size low
power consumption.22–25 This prompts the search power devices. Hence in the implemented device, the
Nanoscale High-k Dielectrics for Junctionless Nanowire Transistor for Drain Current Analysis 2685

HfO2 as gate dielectric exhibits a leakage current of

about 1012 A. Thus the switching performance of
the nano-scale device also improves as the on/off
ratio of the device improves with changing the
dielectric.
The very low leakage current observed for the
device with HfO2 is due to smaller crystallite size
and higher electric resistance of HfO2 thin films.
Similar results are reported in Refs. 37 and 38.
Hence, HfO2 proves to be a good dielectric in terms
of off current for junctionless transistor device and
gives proper switching of the device.

CONCLUSION
HfO2 nanoparticles were prepared by a chemical
precipitation method and modified as a thin film by
a dip-coating method. This was further compared
with SiO2 thin film made from a silicon substrate.
The parameters obtained from the experimental
analysis of HfO2 were incorporated in a technology
computer aided design (TCAD) device simulation of
a junctionless nanowire device with HfO2 gate
dielectrics. HfO2 thin film based metal oxide semi-
conductor field effect transistor (MOSFET) device
delivers lower leakage current than SiO2 based
devices. The main reason is the lower crystalline
size, nanometre particle size and high resistance of
the former. This reveals that crystallite size and
resistance play a vital role in determining the
leakage current of metal oxide semiconductor field
effect transistor (MOSFET) devices. From this we
conclude HfO2 is a promising option for replacing
SiO2 in junctionless transistor devices.
Fig. 10. (a) Drain current with respect to gate source voltage for
junctionless transistor with SiO2 and HfO2 as gate dielectrics (b) OFF REFERENCES
current of junctionless transistor with SiO2 and HfO2 as gate
1. D. Nirmal, B. Nalini, and P. Vijayakumar, Integr. Ferro-
dielectric.
electr. 121, 31 (2010).
2. H. Ohta, A. Nagashima, M. Ito, M. Hori, and T. Goto, J.
Vac. Sci. Technol. B 18, 2486 (2000).
3. W. Zhu, D. Neumayer, V. Perebeinos, and P. Avouris, Nano
Lett. 10, 3572 (2010).
leakage current of the conventional SiO2 dielectric 4. K.Y. Gao, Th Seyller, L. Ley, F. Ciobanu, G. Pensl, A. Ta-
material and nano-sized HfO2 material have been dich, J.D. Riley, and R.G.C. Leckey, Appl. Phys. Lett. 83,
1830 (2003).
analysed and compared. Equivalent oxide thickness 5. Y. Xuan, Y.Q. Wu, H.C. Lin, T. Shen, and D.Y. Peide, IEEE
(EOT) given in Eq. 3, taken from Ref. 1, has been Electron Device Lett. 28, 935 (2007).
considered for this analysis. 6. A. Ramadoss, K. Krishnamoorthy, and S.J. Kim, Mater.
  Lett. 75, 215 (2012).
KSiO2 7. M. Vargas, N.R. Murphy, and C.V. Ramana, Opt. Mater.
EOT ¼ thighk ð3Þ 37, 621 (2014).
Khighk 8. X. Luo, W. Zhou, S.V. Ushakov, A. Navrotsky, and A.A.
Demkov, Phys. Rev. B 80, 134119 (2009).
9. A.J. Waldorf, J.A. Dobrowolski, B.T. Sullivan, and L.M.
Figure 10b, clearly shows that the leakage cur- Plante, Appl. Opt. 32, 5583 (1993).
rent is lower for the device with HfO2 gate dielectric 10. M.F. Al-Kuhaili, S.M.A. Durrani, and E.E. Khawaja, J.
thanfor the SiO2 gate dielectric based device. This is Phys. D 37, 1254 (2004).
11. S.A. Eliziario, L.S. Cavalcante, J.C. Sczancoski, P.S. Piza-
due to the fact that the impedance is higher in HfO2 ni, J.A. Varela, J.W.M. Espinosa, and E. Longo, Nanoscale
than in SiO2 , hence the conductivity is less in HfO2. Res. Lett. 4, 1371 (2009).
For this reason, the leakage current is less in HfO2 12. P.E. Meskin, F.Y. Sharikov, V.K. Ivanov, B.R. Churagulov,
which is reported in Ref. 36. It is also found that a and Y.D. Tretyakov, Mater. Chem. Phys. 104, 439 (2007).
13. G. Srikesh and A.S. Nesaraj, Ceram. Int. 42, 5001 (2016).
device with HfO2 high-k dielectric can have a much 14. G. Ramadoss and G. Srikesh, J. Alloys Compd. 544, 115
thicker dielectric deposition than SiO2. The device (2012).
with SiO2 as gate dielectric gives a leakage current 15. D.A. Neumayer and E. Cartier, J. Appl. Phys. 90, 1801
on the order of 108 A, whereas the device with (2001).
2686 Pravin, Prajoon, Nesamania, Srikesh, Senthil Kumar, and Nirmal

16. P. Senthil Kumar, A. Sakunthala, M. Prabu, M.V. Reddy, 27. D. Nirmal, P. Vijayakumar, D.M. Thomas, B.K. Jebalin,
and R. Joshi, Solid State Ion. 267, 1 (2014). and N. Mohankumar, Microelectron. Reliab. 53, 499 (2013).
17. X. Lu, Z. Zhuang, Q. Peng, and Y. Li, Chem. Commun. 47, 28. J. Charles Pravin, D. Nirmal, P. Prajoon, and J. Ajayan,
3141 (2011). Phys. E. 83, 95 (2016).
18. G. Hu, P. Xiang, Z. Ding, R. Liu, L. Wang, and T.-A. Tang, 29. T.V. Perevalov, M.V. Ivanov, and V.A. Gritsenko, Micro-
IEEE Trans. Electron Devices 61, 688 (2014). electron. Eng. 88, 1475 (2011).
19. J.-P. Colinge, C.-W. Lee, A. Afzalian, N.D. Akhavan, R. 30. J. Robertson and B. Falabretti, J. Appl. Phys. 100, 014111
Yan, and I. Ferain, Nat. Nanotechnol. 5, 225 (2010). (2006).
20. H. Lou, L. Zhang, Y. Zhu, X. Lin, S. Yang, J. He, and M. 31. N.V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz,
Chan, IEEE Trans Electron Devices 59, 1829 (2012). Appl. Phys. Lett. 87, 192903 (2005).
21. J.C. Pravin, D. Nirmal, P. Prajoon, and M.A. Menokey, 32. J.L. Alay and M. Hirose, J. Appl. Phys. 81, 1606 (1997).
IEEE Trans Electron Devices 63, 3782 (2016). 33. S. Sayan, E. Garfunkel, and S. Suzer, Appl. Phys. Lett. 80,
22. N. MohanKumar, B. Syamal, and C.K. Sarkar, IEEE Trans 2135 (2002).
Electron Device 57, 820 (2010). 34. H. Malitson, JOSA 55, 1205 (1965).
23. A. Bouazra, S. Abdi-Ben Nasrallah, M. Said, and A. Poncet, 35. M. Jerman, Z. Qiao, and D. Mergel, Appl. Opt. 44, 3006
Res. Lett. Phys. 2008, 1 (2008). (2005).
24. J. Robertson, Eur. Phys. J. Appl. Phys. 28, 265 (2004). 36. D. Nirmal, P. Vijayakumar, P.P.C. Samuel, B.K. Jebalin,
25. C.R. Manoj and V.R. Rao, IEEE Electron Device Lett. 28, and N. Mohankumar, Int. J. Electron. 100, 803 (2013).
295 (2007). 37. M. El-Shahat and H. Anis, J. Adv. Res. 5, 569 (2014).
26. J. Ajayan and D. Nirmal, Superlattices Microstruct. 86, 1 38. B.N. Dash, P. Dash, R. Biswal, and N.C. Mishra, J. Com-
(2015). put. Theor. Nanosci. 20, 601 (2014).