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    QUIZ 4-Anser

    Uploaded by

    Krish Vaghela
    This document contains a 10 question quiz on semiconductor devices. The questions cover topics such as energy band diagrams, equilibrium conditions, electric fields in semiconductors, excess carrier concentrations, thermal velocities of carriers, diffusion lengths, non-uniform doping profiles, and semiconductor memory manufacturers. Key concepts reviewed include built-in electric fields, diffusion and drift of carriers, generation and recombination of electron-hole pairs, and the relationships between mobility, lifetime, and diffusion length.

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    QUIZ 4-Anser

    Uploaded by

    Krish Vaghela
    28 views5 pages
    This document contains a 10 question quiz on semiconductor devices. The questions cover topics such as energy band diagrams, equilibrium conditions, electric fields in semiconductors, excess carrier concentrations, thermal velocities of carriers, diffusion lengths, non-uniform doping profiles, and semiconductor memory manufacturers. Key concepts reviewed include built-in electric fields, diffusion and drift of carriers, generation and recombination of electron-hole pairs, and the relationships between mobility, lifetime, and diffusion length.

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    QUIZ 4-anser

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    This document contains a 10 question quiz on semiconductor devices. The questions cover topics such as energy band diagrams, equilibrium conditions, electric fields in semiconductors, excess carrier concentrations, thermal velocities of carriers, diffusion lengths, non-uniform doping profiles, and semiconductor memory manufacturers. Key concepts reviewed include built-in electric fields, diffusion and drift of carriers, generation and recombination of electron-hole pairs, and the relationships between mobility, lifetime, and diffusion length.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    28 views5 pages

    QUIZ 4-Anser

    Uploaded by

    Krish Vaghela
    This document contains a 10 question quiz on semiconductor devices. The questions cover topics such as energy band diagrams, equilibrium conditions, electric fields in semiconductors, excess carrier concentrations, thermal velocities of carriers, diffusion lengths, non-uniform doping profiles, and semiconductor memory manufacturers. Key concepts reviewed include built-in electric fields, diffusion and drift of carriers, generation and recombination of electron-hole pairs, and the relationships between mobility, lifetime, and diffusion length.

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    © All Rights Reserved
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    Download as docx, pdf, or txt
    of 5

    DAIICT Gandhinagar

    Semiconductor Devices
    Sept 2023

    QUIZ – 4

    NAME: ID:

    Q1-Q2.
    Consider a silicon sample maintained at 300 K, and the schematic of the energy band
    diagram is illustrated as shown in the figure. Consider EF as the reference energy level.

    Q1: Do equilibrium conditions prevail? Why?


    a. No. Because energy bands Ec, Ev are bending.
    b. Yes. Because energy difference between Ec and Ei, Ei and Ev is same.
    c. Yes. Because Fermi level EFis constant along x
    d. No. Because EF is not parallel to Ec
    Q2.
    The sketch of electric field (E) inside the Si as a function of x is best described by _________

    1
    a. CORRECt b. c. d.
    Q3.
    A sample of semiconductor has a cross-sectional area of 1 cm2 and a thickness of 0.1 cm. A
    number of electron–hole pairs are generated per unit volume per unit time by the uniform
    absorption of 1 W of light at a wavelength of 630 nm. What is the approximate steady-state
    excess carrier concentration, if the excess minority carrier lifetime is 10 μs? Assume each
    photon creates one electron–hole pair.
    a. 1.96 x 1019 cm-3
    b. 1.96 x 1015 cm-3
    c. 3.17 x 1014 cm-3
    d. 3.17 x 1017 cm-3

    Q4.
    The approximate thermal velocities of electrons and holes in silicon at room temperature is
    ________ ×107 cm/s? Assume the electron effective mass m∗=0.26m0.

    a. 23
    b. 10
    c. 2.3
    d. 1

    Remember: Average kinetic energy of the carrier is KE=32k. Electrons and holes move at the
    thermal velocity but not in a simple straight-line fashion. Their directions of motion change
    frequently due to collisions or scattering with imperfections in the crystal. The mean free

    2
    time between collisions is typically in the order of ps, and the distance between collisions is
    a few tens of nm. The netnet or average thermal velocity is zero. Thus, thermal motion does
    not create a steady electric current, but it introduces a thermal noise.

    Q5.

    In a very long p-type Si bar with cross-sectional area = 0.5 cm2 and NA=1017 cm−3, holes are
    injected such that the steady-state excess hole concentration is 5×1016 cm−3 at x=0. Assume
    that μp = 500 cm2/Vs, kT/q=26 mV and τp=10-10S. What is the hole diffusion length (in μm)?

    a. 13
    b. 0.36
    c. 36
    d. 1.3
    REMEMBER : Minority carrier diffusion length is the average distance a minority carrier
    diffuses before recombining. It depends on both the diffusion coefficient (mobility) and
    minority carrier lifetime. In a device like solar cells, photoexcited carriers must be able to
    move from the point of generation to where they can be collected. Longer diffusion lengths
    result in better performance.

    Q6.
    Consider a n-type semiconductor with non-uniform doping Nd=1016exp(-x/L)
    where L=200 μm at T=300 K. Determine the induced electric field (V/cm) in the
    semiconductor at x=100 μm?.

    a. 1
    b. 1.3

    c. .02
    d. 200
    REMEMBER : n most of the cases, we use/mention uniform doping of the semiconductor,
    and there is no carrier density gradient; hence the built-in field is zero. On the other hand,
    there is a special case of non-uniform doping in the semiconductor that varies with the
    position (x), such that there is a diffusion of carriers leading to a fixed space charge, and,
    thereby, a non-zero built-in field is created.

    For Q7-Q9. The energy band diagram of a semiconductor is shown.

    3
    Q7.
    At position x1, what is the type of semiconductor?
    a. N type
    b. P type
    c. Intrinsic
    d. Cant be determined
    Q8.
    At position x2, what is the kinetic energy of the electron (red) in eV?
    a. 1.1
    b. 0.9
    c. 0
    d. 1.3
    Q9.
    Based on the band diagram, which of the following describes approximate electric field vs
    position?

    4
    a. CORRECT B. c. d.

    Q10.
    Name any one company famous for making semiconductor memories?
    Micron
    Hynix
    Samsung

    *****

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