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    Assignment 3 (KOE 038) - FET

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    Indrajeet Sharma
    This document contains an electronics engineering assignment on field effect transistors (FETs). The assignment includes 13 questions covering the differences between bipolar junction transistors (BJTs) and FETs, the structures and workings of n-channel and p-channel junction FETs (JFETs) and metal-oxide-semiconductor FETs (MOSFETs), transfer characteristics, parameters such as transconductance and drain resistance, biasing circuits, and the differences between depletion and enhancement type MOSFETs. Students are asked to define key terms, draw diagrams, derive equations, determine voltages/currents, and explain concepts related to various FET devices.

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    Assignment 3 (KOE 038) - FET

    Uploaded by

    Indrajeet Sharma
    15 views1 page
    This document contains an electronics engineering assignment on field effect transistors (FETs). The assignment includes 13 questions covering the differences between bipolar junction transistors (BJTs) and FETs, the structures and workings of n-channel and p-channel junction FETs (JFETs) and metal-oxide-semiconductor FETs (MOSFETs), transfer characteristics, parameters such as transconductance and drain resistance, biasing circuits, and the differences between depletion and enhancement type MOSFETs. Students are asked to define key terms, draw diagrams, derive equations, determine voltages/currents, and explain concepts related to various FET devices.

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    Assignment-3(KOE-038)_FET

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    This document contains an electronics engineering assignment on field effect transistors (FETs). The assignment includes 13 questions covering the differences between bipolar junction transistors (BJTs) and FETs, the structures and workings of n-channel and p-channel junction FETs (JFETs) and metal-oxide-semiconductor FETs (MOSFETs), transfer characteristics, parameters such as transconductance and drain resistance, biasing circuits, and the differences between depletion and enhancement type MOSFETs. Students are asked to define key terms, draw diagrams, derive equations, determine voltages/currents, and explain concepts related to various FET devices.

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
    15 views1 page

    Assignment 3 (KOE 038) - FET

    Uploaded by

    Indrajeet Sharma
    This document contains an electronics engineering assignment on field effect transistors (FETs). The assignment includes 13 questions covering the differences between bipolar junction transistors (BJTs) and FETs, the structures and workings of n-channel and p-channel junction FETs (JFETs) and metal-oxide-semiconductor FETs (MOSFETs), transfer characteristics, parameters such as transconductance and drain resistance, biasing circuits, and the differences between depletion and enhancement type MOSFETs. Students are asked to define key terms, draw diagrams, derive equations, determine voltages/currents, and explain concepts related to various FET devices.

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
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    Course: B.Tech.

    Year/Semester: 3rd /II


    Academic Year: 2019-20

    ASSIGNMENT NO: 3

    Subject: Electronics Engineering (KOE-038)


    UNIT:III –Field Effect Transistor( FET)

    1. Distinguish between BJT and FET.


    2. List the primary differences between JFET and MOSFET.
    3. Draw the structure of n- channel and p- channel JFET and explain its working with
    neat diagram.
    4. Draw the transfer curve and drain curve of n- channel and p- channel JFET. Define
    IDSS and VP
    5. Given IDSS = 9mA and VP = -3.5V, determine ID when VGS =0V and VGS = -2V.
    6. Determine the following for the network.(i) VGSQ (ii) VDS(iii) IDQ (iv) VG (v) VD

    7. Prove that the transconductance of JFET is given by

    8. Define the parameters of JFET (i) Transconductance (gm) (ii) drain resistance (rd) (iii)
    amplification factor (µ). Prove that µ=gm*rd
    9. Draw the self bias CS amplifier circuit of JFET and find the expression for voltage
    gain.
    10. Explain n-channel and p-channel depletion type MOSFET and explain its working
    with transconductance curve and drain curve.
    11. Explain n-channel and p-channel enhancement type MOSFET and explain its working
    with transfer and output characteristics. Define threshold voltage.
    12. What are the significant differences between enhancement MOSFET and depletion
    MOSFET?
    13. For voltage divider bias as shown in figure. If VD=12v and VGSQ= -2V, determine the
    value of resistance Rs.

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