Electronic Devices and Circuits MCQ (Multiple

Choice Questions)
Here are 1000 MCQs on Electronic Devices and Circuits (Chapterwise).

1. Which of the following is not an electronic device?

a) A mobile
b) A computer
c) A magnifying glass
d) A keyboard
View Answer

Answer: c
Explanation: A mobile, a computer and a keyboard are electronics devices because they are
controlled by the flow of electrons for information processing. A magnifying glass is a non-electronic
device.

2. Which of the following is not a physical component of an electronic circuit?

a) Capacitor
b) Inductor
c) Diode
d) Temperature
View Answer

Answer: d
Explanation: Capacitors, inductors, and diodes are the physical components of electronic circuits
because they affect the flow of electrons or current in the circuit.

3. Which of the following is not a property of semiconductors used in electronic devices?

a) They excite electrons
b) They don’t emit light
c) They have high thermal conductivity
d) They have variable electrical conductivity
View Answer

Answer: b
Explanation: Semiconductors excite electrons. They have variable electrical conductivity and high
thermal conductivity. Some compound semiconductors also emit light which is popularly known as
light-emitting diodes.

4. Which of the following is the correct relationship between temperature (T) and mobility (u) of
electrons in electronic circuits?
a) u ∝ T-3/2
b) u ∝ T-1/2
c) u ∝ T
d) u ∝ T-1
View Answer

Answer: a
Explanation: When temperature increases then the frequency of the lattice point increases and as a
result collisions of electrons increases. Hence, mobility decreases. The correct relation is u ∝ T-3/2.

5. What is the effect of temperature on the recombination rate of electrons in electronic circuits?
a) Recombination rate increases with increase in the temperature
b) Recombination rate decreases with increase in the temperature
c) Recombination rate is independent of temperature
c) Recombination of electrons doesn’t occur in semiconductors
View Answer

Answer: b
Explanation: Recombination rate decreases when temperature increases because the electrons that
are going to combine with holes in the valence bond are re-excited.

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6. Which of the following is correct about semiconductors in electronic devices?
a) Elemental semiconductors have direct band gap
b) Compound semiconductors have indirect band gap
c) Extrinsic semiconductors are injected with impurities
d) Doping is done in Intrinsic semiconductors
View Answer

Answer: c
Explanation: Elemental semiconductors have indirect band gap. Compound semiconductors have
direct band gap. Doping is done with impurities in extrinsic semiconductors, not in intrinsic
semiconductors.

7. Which of the following technique can’t be used for generating electron-hole pairs in electronic
devices?
a) Thermal excitation
b) Impact ionization
c) Photo excitation
d) Impurity injection
View Answer

Answer: d
Explanation: Electron-hole pairs can be generated by increasing temperature or ionization or photo
excitation. Impurity injection is done for doping of semiconductors. This process doesn’t generate
electron-hole pairs.

8. Which of the following is not correct about semiconductors in electronic devices?

a) Electrons are present below Fermi level in a semiconductor
b) Degenerated semiconductors behave like a conductor
c) Fermi level is independent of temperature and doping
d) Pentavalent atoms are used in an n-type extrinsic semiconductor
View Answer

Answer: c
Explanation: Fermi level is the highest level of electrons at 0K. Below Fermi level, all levels are filled
 with electrons. Fermi level depends on the temperature and the doping of the semiconductor.

9. Which of the following equation represents mass action law for semiconductors in electronic
circuits?
a) n × p = ni2
b) n × p = ni
c) n × p = ni3
d) n × p = ni1/2
View Answer

Answer: a
Explanation: Mass action law states that at a constant temperature, the product of the concentration
of electrons and the concentration of holes is maintained constant in any type of semiconductor.

10. Which of the following is correct about Hall Effect in electronic circuits?
a) Hall voltage is very weak in metals as compared to semiconductors
b) Hall voltage is directly proportional to the charge density
c) Hall voltage is inversely proportional to the intensity of the magnetic field
d) Intrinsic semiconductor has a positive temperature coefficient of hall constant
View Answer

Answer: a
Explanation: Metals have an ocean of electrons. So, there is very little difference between positive
and negative charges in metals. Thus, Hall voltage is very weak in metals as compared to
semiconductors.

11. Which of the following is not correct about a step-graded junction in electronic devices?
a) Diodes with step-graded junctions are slower than a normal diode
b) They are designed with abrupt junction
c) They are either p+– n or p – n+ junction
d) Depletion layer penetrates more into the lightly doped region
View Answer

Answer: a
Explanation: Step-graded junctions are designed with abrupt junctions. They are either p+– n or p –
n+ junction and diodes with step-graded junctions are faster than the normal diodes.

12. Which of the following is correct about photo diode electronic devices?
a) P-N junction is connected in reverse bias.
b) Electron-hole pairs are generated by impurity injection in depletion layer
c) It is a photovoltaic cell
d) No external voltage is applied
View Answer

Answer: a
Explanation: Photo diode is a photoconductive cell. External voltage is applied and P-N junction is
connected in reverse bias. Electron-hole pairs are generated by photons in the depletion layer.

13. Which of the following is wrong about solar cell electronic devices?
a) Solar cell responsivity is directly proportional to the wavelength of light
b) It produces dark current
c) It is a photovoltaic cell
d) No external voltage is applied
View Answer

Answer: b
Explanation: Solar cell is a photovoltaic cell. No external voltage is applied and solar cell responsivity
is directly proportional to the wavelength of the incident light. It doesn’t produce dark current.

14. What type of semiconductor is used in LED electronic circuits?

a) Intrinsic semiconductor
b) Compound semiconductor
c) Degenerated semiconductor
d) Compensated semiconductor
View Answer

Answer: b
Explanation: LEDs need compound type semiconductors because they have direct band gap. In
direct band gap, photons are easily generated when electrons release energy during recombination.

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15. Which of the following semiconductor is mostly used to construct electronic circuits?
a) Silicon
b) Germanium
c) Selenium
d) Tin
View Answer

Answer: a
Explanation: Silicon is mostly used to construct electronic circuits because silicon has a much higher
PIV (Peak Inverse Voltage) than the other semiconductors. It is also very cheap.

16. Which of the following is correct about NMOS electronic circuits?

a) It has N-substrate
b) For inversion positive voltage is applied to the gate terminal
c) For accumulation positive voltage is applied to the gate terminal
d) NMOS has holes as the majority of carriers
View Answer

Answer: b
Explanation: NMOS has P-substrate and it has electrons as the majority carriers. For accumulation
negative voltage is applied to the gate terminal and for inversion positive voltage is applied to the
gate terminal.

17. Which of the following is wrong about threshold voltage (VT) in a MOSFET electronic circuit?
a) If VT is less, channel form quickly for conductivity
b) VT can be reduced by reducing oxide layer thickness
c) VT is independent of ion implementation
d) VT can be reduced by reducing substrate doping
View Answer

Answer: c
Explanation: VT can be reduced by suitable ion implementation. Like in NMOS, positive donor ions
are implemented to reduce repulsion to the electrons present in the channel.
18. Which of the following is the correct relationship between trans-conductance (Gm) and drain to
source current (IDS) in an NMOS electronic circuit?
a) Gm ∝ IDS-3/2
b) Gm ∝ IDS-1/2
c) Gm ∝ IDS
d) Gm ∝ IDS1/2
View Answer

Answer: d
Explanation: Trans-conductance in NMOS is defined as the change in the drain to source current
with respect to the gate to source voltage. The correct relation is Gm ∝ IDS1/2.

19. In which of the following region does BJT act as the amplifier electronic device?
a) Cut-off
b) Saturation
c) Active
d) Reverse saturation
View Answer

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20. Which type of semiconductor is used in Tunnel Diode?

a) Compound semiconductor
b) Elemental semiconductor
c) Degenerated semiconductor
d) Extrinsic semiconductor
View Answer

Answer: c
Explanation: Degenerative N-type and degenerative p-type semiconductors are used in tunnel
diodes. Tunnel diodes are used in microwave electronic devices and circuits.

21. Which of the following is false about Fermi-Dirac distribution function f(E) used to understand
semiconductors in electronic circuits?
a) f(E) is the probability of finding an electron in an energy level E
b) When the temperature decreases f(E) also increases
c) f(E) doesn’t give the number of electrons in a given energy level
d) f(E) doesn’t give the number of energy levels with electrons
View Answer

Answer: b
Explanation: Fermi-Dirac distribution function f(E) is the probability of finding an electron in an
energy level E. When temperature increases f(E) also increases.

22. An electronic circuit wire of conductivity 5.8 × 107 mho-m is subjected to an electric field of 40
mV/m. What will be its current density?
a) 2.32 × 106 A/m2
b) 1.16 × 106 A/m2
c) 4.64 × 106 A/m2
d) 4.30 × 106 A/m2
View Answer

Answer: a
Explanation: The current density (J) is the product of conductivity and electric field. The conductivity
is 5.8 × 107 mho-m and the electric field is 40 mV/m. So, J = 5.8 × 107 × 40 × 10-3 = 2.32 × 106 A/m2.

23. Mass action law is not valid for which type of semiconductors in electronic devices?
a) Compound
b) Elemental
c) Degenerative
d) Compensated
View Answer

24. Which of the following is the correct expression of current in an intrinsic semiconductor electronic
circuit?
a) ITotal = Ie + Ih
b) ITotal = Ie – Ih
c) ITotal = Ie + 2Ih
d) ITotal = 2Ie + Ih
View Answer

Answer: a
Explanation: When electric field is applied to an intrinsic semiconductor, electrons and holes move in
the opposite direction. So, the total current will be the sum of the current due to electrons and
holes.

25. When an electronic circuit is in equilibrium then which of the following equation is valid?
a) Jdrift + Jdiffusion = 1
b) Jdrift + Jdiffusion = 0
c) Jdrift + Jdiffusion = -1
d) Jdrift + Jdiffusion = 2
View Answer

Answer: b
Explanation: When an electronic circuit is in equilibrium then the net current density becomes 0.
Current density occurs due to the drift and diffusion of ions. So, Jdrift + Jdiffusion = 0.

26. Which of the following is wrong about P-N junction diodes used in electronic devices?
a) They have three modes of operations
b) They have dynamic resistance at low-frequency AC voltage
c) They have diffusion capacitance at high-frequency AC voltage
d) They can act as ON-OFF switches
View Answer

Answer: a
Explanation: P-N junction diodes have two modes of operations i.e. forward and reverse bias.
Forward bias is called ON switch and reverse bias is called OFF switch.

27. What is the conductivity of an extrinsic type semiconductor electronic device at 0K?
a) maximum
b) zero
c) can’t be determined
d) minimum
View Answer
 Answer: b
Explanation: At T = 0K, conductivity will be zero because donar level ionization is zero, so no free
electron is there in the conduction band. Conductivity is measured when free electrons are present
in the conduction band for conduction.

28. What is the conductivity of an extrinsic type semiconductor electronic device at 300K?
a) Maximum
b) Zero
c) Can’t be determined
d) Minimum
View Answer

Answer: a
Explanation: At 300k, conductivity is maximum because of complete ionization of dopant levels
which causes more free electrons conductivity in the conduction band.

29. Which of the following effects is responsible for violating the mass action law in degenerative type
semiconductor electronic devices?
a) Thermal effect
b) Bandgap narrowing effect
c) Lattice vibration effect
d) Electronic drift effect
View Answer

Answer: b
Explanation: With a very high amount of doping in degenerative type semiconductors, atoms come
closer. For this reason, the interatomic interaction cannot be neglected. So, the effective band gap
becomes narrow.

30. Which of the following diode is used in ultra-high speed switching electronic circuits?
a) Zener diode
b) Varactor diode
c) Tunnel diode
d) Schottky diode
View Answer

Answer: c
Explanation: Due to tunneling, a large number of electrons penetrate through the junction, so a large
amount of current is produced. And as we are considering a special diode, we can control its I-V
characteristics to improve the switching speed.
31. Which of the following diode is used in adjustable band pass filter electronic circuits?
a) Zener diode
b) Varactor diode
c) Tunnel diode
d) Schottky diode
View Answer

Answer: b
Explanation: Band pass filter depends upon the value of the resistance and capacitance. In varactor
diode, we can obtain capacitance by varying the input voltage. As capacitance becomes adjustable, it
can be considered as an adjustable band pass filter.

32. Forbidden Energy gap (EG) of a semiconductor in electronic devices depends on which of the
following factors?
a) Interatomic distance
b) Material constant
c) Electron affinity
d) Recombination and Generation
View Answer

Answer: a
Explanation: Forbidden energy gap (EG) of a semiconductor is directly proportional to the bond
strength. And bond strength depends on the interatomic distance.

33. Which of the following is the correct order of turn-off times?

a) MOSFET < BJT < IGBT < SCR
b) MOSFET < IGBT < BJT < SCR
c) SCR < BJT < IGBT < MOSFET
d) BJT < MOSFET < IGBT < SCR
View Answer

Answer: a
Explanation: Electronic devices like MOSFET have the lowest turn-off times (nanoseconds). BJT has
turn-off times in between nanoseconds to microseconds. IGBT and SCR have turn-off times of about
1 and 5 microseconds respectively.

34. Which of the following is correct relation for saturation region in a NMOS electronic circuit?
a) VDS >= VG + VT
b) VDS >= VG – VT
c) VDS <= VG – VT
d) VDS >= VG ± VT
View Answer

Answer: b
Explanation: For the saturation region, the drain to source voltage is greater than or equal to the
difference between the gate voltage and the thermal voltage. So, VDS >= VG – VT.

35. Which of the following type of transistor is preferred in digital and analog electronic circuits?
a) BJT
b) JFET
c) MOSFET
d) FET
View Answer

Answer: c
Explanation: MOSFET is preferred in digital and analog electronic circuits because it is faster than all
other transistors. Also, it has a very high input impedance.

36. Which of the following is true about the depletion layer channel in an NMOS electronic circuit?
a) Inverted change in the channel increases from source to drain
b) Inverted charge remain constant
c) Inverted change in the channel decreases from source to drain
d) Potential in the channel decreases from source to drain
View Answer

Answer: c
Explanation: When the depletion layer starts moving into the channel, due to the reverse bias of
drain and substrate voltage, the inverted charge in the channel decreases from source to drain.

37. Which of the following is true about Zener diode?

a) It is lightly doped
b) It is mostly used in voltage regulator electronic circuits
c) It is used in forward bias
d) It has avalanche breakdown
View Answer

Answer: b
Explanation: Zener diode is a heavily doped diode. It is used in reverse bias. It has Zener breakdown.
It is used in voltage regulators because it passes an excess amount of current in breakdown mode by
maintaining constant voltage across the load.
38. In which region does BJT act as the OFF switch in electronic circuits?
a) Cut-off
b) Saturation
c) Active
d) Reverse saturation
View Answer

Answer: b
Explanation: In the saturation region, the emitter-base junction is forward biased, the collector-base
junction is also forward biased. This is the operating mode when no current flows through BJT.

Chapterwise Multiple Choice Questions on Electronic Devices and Circuits

Our 1000+ MCQs focus on all topics of the Electronic Devices and Circuits
subject, covering 100+ topics. This will help you to prepare for exams,
contests, online tests, quizzes, viva-voce, interviews, and certifications. You
can practice these MCQs chapter by chapter starting from the 1st chapter or
you can jump to any chapter of your choice. You can also download the PDF of
Electronic Devices and Circuits MCQs by applying below.

1. Electronic Devices and Circuits Overview

2. Conduction in Semiconductors
3. Semiconductor-Diode Characteristics
4. Diodes
5. Application of Diodes
6. Transistor Characteristics
7. Transistor Biasing and Thermal Stabilization
8. Signals and Amplifiers
9. Operational Amplifiers
10. MOS Field Effect Transistors (MOSFETs)
11. Bipolar Junction Triodes (BJTs)
12. Small-Signal Low-Frequency AC models of Transistors
13. Field-Effect Transistors
14. Large Signal Amplifiers