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Nano film technology

[양자역학 기초]
Quantum Mechanics

I think it is safe to say that no


one understands quantum
mechanics. Do not keep
saying to yourself, if you can
possibly avoid it, “But how
can it be like that?” because
you will get “down the drain”
into a blind alley from which
nobody has yet escaped.
Nobody knows how it can be
like that.
- Richard Feynman
Those who are not shocked
when they first come across
quantum mechanics cannot
possibly have understood it.
- Niels Bohr
Richard Feynman (1918-1988)
6.1: The Schrödinger Wave
Equation
The Schrödinger wave equation in its time-dependent form for a
particle of energy E moving in a potential V in one dimension is:

∂Ψ ( x , t ) h2 ∂ Ψ ( x , t )
ih
∂t
where V = V ( x,t )
where i is the square root of -1.

The Schrodinger Equation is THE fundamental equation of


Quantum Mechanics.
General Solution of the Schrödinger
Wave Equation when V = 0
In free space (with V = 0), the general form of the wave function is

Ψ ( x , t ) = Ae i ( kx − ω t ) = A [cos( kx − ω t ) + i sin( kx − ω t )]

which also describes a wave moving in the x direction. In general


the amplitude may also be complex.

The wave function is also not restricted to being real. Notice that
this function is complex.

Only the physically measurable quantities must be real. These


include the probability, momentum and energy.
Electronic Structure of the Atom
Principles of Quantum Mechanics
p = h/l De Broglie relation
p = the momentum of the particle ( m·v )
h = Plank’s constant (6.626 × 10-27 erg sec)

Ek = p2 / 2me kinetic energy of electron

Schrödinger Equation
wave function

The permitted energies are


Energy Bands in Solids

No interactions Interatomic interaction Two heighest energy bands:


of the electron results in the formation valenced band
wavefunction of electron energy band conduction band
Energy Bands in Semiconductor
C o v a le n t b o n d
S i io n c o re (+ 4 e )
E lectro n en erg y , E

E +c
c
C onduction B and (C B )
E m pty of electrons at 0 K .

E
c

B and gap = Eg

E
v

V alence B and (V B )
F ull of electrons at 0 K .

(a ) (b )

(a) A simplified two dimensional view of a region of the Si crystal


showing covalent bonds. (b) The energy band diagram of electrons in the
Si crystal at absolute zero of temperature.
☞ No allowed electron energies in the bandgap
Eg = Ec – Ev

☞ the width of CB: electron affinity c


Quantum Wells, Wires, and Dots
► The dimensionality of a material can be reduced by sandwiching it between two layers
of another material that has higher-energy electrons.
► This confinement changes the density of electron states, or specific energy levels,
that will be filled by incoming electrons.

The word ‘quantum’ is used here since the changes in properties arise from the
quantum-mechanical nature of physics in the ultrasmall domains.
Quantum Dots – Basic properties

J . Ma t e r . C h em., 2 0 0 4 , 1 4 , 6 6 1 – 6 6 8
Quantum Dots - A tunable range of energies

Quantum confinement describes the increase in energy which occurs when the
motion of a particle is restricted in one or more dimensions by a potential well.
A quantum dot is a well that confines in all three dimensions such as a small sphere,
a quantum wire confines in two dimensions, and a quantum well confines in one
dimension.
h2n2
En = 3D potential well
8mL2
Quantum dots' electron energy levels are discrete rather than continuous.
So the addition or subtraction of just a few atoms to the quantum dot has the
effect of altering the boundaries of the bandgap.
Optical properties of ZnO nanostructures
Luminescence is an optical phenomenon mostly found in cold bodies, in which the
molecular absorption of a photon triggers the emission of another photon with a
longer wavelength.

Generally ZnO nanocrystals show two line patterns viz. sharp excitonic emission in the Ultra
Violet region and broad defect related emission in the visible region.
Quantum confinement effect [ZnO]

S 4pr 2 1
= ¥
V 4 pr 3 r
3

Emission energy as well as intensity ratio of which depends upon the surface to
volume ratio of the nancrystals.
#Nano images of ZnO
Band gap engineering of ZnO nanostructures by alloying with Mg and Cd

Wurtzite ZnO Rock salt MgO and CdO

S. G. P63mc S.G. Fm3m


Ionic radii = Ionic radii = 0.57
0.60 Å Å (Mg) and
0.72Å (Cd)

Undoped ZnO Mg doped ZnO Cd doped ZnO


Band gap engineering of ZnO nanostructures by alloying with Mg and Cd
Quantum Well Devices
E
QW
Dy d Bulk
Ec
E3
E ² Ec n = 2 E2
d n=1 E1
Eg2
D z AlGaAs AlGaAs z Eg1
y QW
Bulk
² Ev
x Ev g(E)
GaAs Density of states

(a) (b) (c)


A quantum well (QW) device. (a) Schematic illustration of a quantum well (QW) structure in which a
thin layer of GaAs is sandwiched between two wider bandgap semiconductors (AlGaAs). (b) The
conduction electrons in the GaAs layer are confined (by ? Ec) in the x-direction to a small length d so
that their energy is quantized. (c) The density of states of a two-dimensional QW. The density of states
is constant at each quantized energy level.

?1999 S.O. Kasap, Optoelectronics (Prentice Hall)


☞ Two dimensional confinement of electrons in the conduction band and holes in the valance band.
→ Advantages : 1) the reduced threshold current for population inversion (0.1~1mA)
2) the very narrow range of emitted photon energies (E1 - E1’) : narrow wavelength
Quantum Well Devices

Ec
E Active layer Barrier layer
E1 Ec
E
hu = E1 ? E¢1

E¢1
Ev
Ev

A multiple quantum well (MQW) structure.


In single quantum well (SQW) lasers electrons are Electrons are injected by the forward current
injected by the forward current into the thin GaAs into active layers which are quantum wells.
layer which serves as the active layer. Population
inversion between E1 and E ¢1 is reached even with a ?1999 S.O. Kasap, Optoelectronics (Prentice Hall)
small forward current which results in stimulated
emissions.

?1999 S.O. Kasap, Optoelectronics (Prentice Hall)


Band diagram of quantum well

Barrier QW Barrier

light

Quantum well

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