Lecture 3
Lecture 3
• The yield stress sy varies if single crystals of different orientations are deformed.
• A dislocation moves when it becomes subject to a force which has a component
parallel to the slip plane in the slip direction. Hence, it is not the applied tensile
stress, rather the resolved shear stress in the slip system that causes dislocation
motion.
𝐹 cos 𝜆 𝐹
𝜏= = cos 𝜆 cos 𝜅 = 𝜎 cos 𝜆 cos 𝜅
𝐴 𝐴
cos 𝜅
1
Schmid's Law
With Schmid's law the active slip systems of a single crystal can be determined.
The slip system with the highest Schmid-factor will reach the critical resolved shear
stress first and, therefore, carry the plastic deformation.
For tensile stress applied in the [001]-[011]-[-111] unit triangle, the most highly
stressed slip system (highest Schmid factor) has a (111) slip plane and a [-101]
slip direction.
W. F. Hosford. The mechanics of crystals and textured polycrystals 2
Schmid's Law
active slip systems
Single, double and multiple slip
3
Schmid's Law
active slip systems
In addition to the primary slip system in a given triangle, there are systems with
smaller resolved shear stresses. Particular names are given to some of these.
Pr: Primary
Co: Conjugate Co
Cross Pr CP
Cr: Critical
CP: Co-planar
Cr
Cross: Cross slip system
CP
4
Crystal rotation during deformation
The slip process induces crystal lattice rotation, which will bring the crystal in a
position corresponding to the strain forced upon it, e.g. in tension the active slip
direction approaches the tensile axis. Thus the Schmid-factor changes.
This can lead to the initiation of slip on a different system.
This rotation is represented by the rotation of the tensile axis relative to the
crystal lattice in the standard stereographic projection.
-101
-112
001 011
Overshooting : Upon arrival at the symmetry line, the primary slip system
continues to dominate.
This" overshooting" is a result of latent hardening, which means that the secondary
slip system is hardened because of the activation of the primary slip system
Crystal rotation during deformation
Geometry of deformation
Latent hardening experiment
In a primary test a specimen is oriented for single slip on system α and strained
up to γα.
In a successive secondary test on a part of the same specimen, another previously
latent slip system β is activated.
The amount of latent hardening is directly observable through comparison of the
back-extrapolated initial yield stress τβ in the secondary test with the stress level
τα at the pre-strain γα in the primary test.
Calculation of the shear stress-shear strain curve τ(γ) from the recorded σ(ε)
curve, requires taking into account the change of the Schmid-factor with
deformation.
s Δ AEB : Cos κ0=AE/l0
s Δ AEC : Cos κ=AE/l
Δ ADB : Sin λ0=AD/l0
Δ ADC : Sin λ=AD/l
ε = (l-l0)/l0= l/l0 -1 à
Strain Hardening of fcc Single Crystals
Geometry of deformation
Strain Hardening of fcc Single Crystals
Strain hardening
The shear stress-shear strain curves of single crystals of different orientations are
very different although similar in character.
Elastic properties of dislocations
Stress fields of dislocations (Screw dislocation)
Elastic properties of dislocations
Stress fields of dislocations (Screw dislocation)
Eq. 6.40
Elastic properties of dislocations
Stress fields of dislocations (Edge dislocation)
The existence of normal stresses can be understood from the atomistic structure of an edge dislocation. Above the slip
plane the lattice is squeezed, corresponding to compressive stresses, while underneath the dislocation core the lattice
is dilated leading to tensile stresses.
Fig. 6.35
Elastic properties of dislocations
So far we have neglected the dislocation core, where Hooke's law does not hold
anymore because of the large distortions.
For an assessment of the radial size of the dislocation core ro, we can utilize the fact
that the elastic stresses can never exceed the theoretical shear stress (6.30).
The energy associated with a dislocation is the energy required to distort the lattice
surrounding the dislocation elastically.
Consider an element of length L and thickness dr at a distance r from the center of
a screw dislocation.
τ=Gγ
τ
Ev = (1/2)τγ
γ
Elastic properties of dislocations
Energy of dislocations
Screw dislocations
dV= 2πrLdr
γ = b/(2πr )
Ev = (1/2)τγ L
τ=Gγ
Ev = (1/2)Gγ2 = (1/2)Gb2/(2πr )2
Edge dislocations
The distortion is severe near the dislocation but decreases with distance from it.
This analysis neglects the energy of the dislocation core.
r0 ≈ b ≈ 1Å ≈ 10-10 m
υ = 0.3
Dislocation density: ρ
Etotal =ρ Ed = α G b2 ρ [J/m3]
Interaction of dislocations
Force acting on dislocations: Peach - Koehler equation
Work of slip W necessary to displace the top part of the crystal by the distance b:
W=t . l1 . l3 . b
the exact same deformation can be accomplished by the motion of a dislocation through
the distance l1.
W=F . l3 . l1
F= (s.b) x s
Interaction of dislocations
F=(σ.b) x S
X
Fx>0
Repelling forces
Fy>0
Fz=0
Fx<0 X
Attractive forces
Fy<0
Fz=0
Interaction of dislocations
Edge dislocations
If b1 = b2 :
Fy
Fx
Interaction of dislocations
Polygonization
A periodic arrangement of many dislocations on top of each other corresponds to
the structure of a symmetrical low angle tilt grain boundary , which is known to form
during recovery processes by rearrangement of dislocations.
Interaction of dislocations
Passing stress
For a large scale displacement of a dislocation, the force Fmaxx has to be overcome.
Cutting stress
The cutting process always creates at least one step which is associated with an
increase of the energy of the affected dislocation, namely by the energy of the
newly generated section of the dislocation line αGb2b.
Energy balance:
α2 G b2 . b = τc b Lf . b
τc = α2 G b / Lf = α2 G b √ρf
τ0 = τpass + τc ρp ~ ρ and ρf ~ ρ
τ0 = α1 G b √ρp + α2 G b √ρf = α G b √ρ