EDC Lab Manual Final (1) (9319)

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Electronic Devices and Circuits (EL-123) Laboratory Manual
Electrical Engineering Laboratory Manual
ELECTRONIC DEVICES AND CIRCUITS

(EL-123)
___________________________________________________________________________
2nd Semester Electrical Engineering
NAME: _______________________________________________
BATCH: 2020 SECTION: ___________________
SESSION: _____________________________________________
ROLL NO: _____________________________________________
LAB INSTRUCTOR: _____________________________________
DEPARTMENT OF ELECTRICAL ENGINEERING

SIR SYED UNIVERSITY OF ENGINEERING AND TECHNOLOGY
University Road, Karachi-75300
www.ssuet.edu.pk
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Sir Syed University of Engineering & Technology, Karachi

Electrical Engineering Department
Rubric Guideline for Hardware Based Lab
Electronic Devices & Circuits (EL-123), Semester: 2nd, Batch: 2020
Name of Student: ________________________________Roll No. __________________
Exceeds Expectations Meets Expectations Developing Unsatisfactory

Criteria
(>=90%) (70%-89%) (50%-69%) (<50%)
Able to setup
Able to setup
experiment
experiment Can setup major part Can’t set up the
Experimental independently with
independently with of the experiment experiment even
Setup adequate
complete understanding with assistance with assistance
understanding of
of each step
each step
Able to follow the

Able to follow major
procedure completely Able to follow the
part of the procedure Unable to follow
Procedure with simplification or procedure
with errors or the procedure
develop alternate completely
omissions
procedure
Able to achieve all the

Able to achieve
Experimental desired results with Able to achieve all Unable to achieve
most of the desired
Results alternate ways to the desired results the desired results
results with errors
improve measurements
Fairly alert to Rarely alert to

Poorly alert about
Extremely alert to practice safety practice safety
safety measures in
Safety practice safety measures measures in measures in
laboratory
in laboratory procedures laboratory laboratory
procedures
procedures procedures
Laboratory
Laboratory manual has Laboratory manual Laboratory manual manual has several
no grammatical and/ or has very few has multiple grammatical/
spelling errors. grammatical/ grammatical/ spelling errors and
Laboratory spelling errors. spelling errors. sentence
Manual All sections of the construction is
report are very well All sections of the Few sections of the poor. All sections
written and technically report are report contains of the report
accurate. technically accurate. technical errors. contains multiple
technical errors.
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Rubric -Laboratory Manual
Name of Student: ________________________________ Roll No. __________________
Lab Description & Score
Experimental Setup Procedure Results Safety Lab Report Score

1 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

2 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

3 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

4 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

5 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

6 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

7 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

8 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

9 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

10 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2
Experimental Setup Procedure Results Safety Lab Report Lab Report

11 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

12 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

13 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

14 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2

15 ( )/1.0 ( )/0.4 ( )/0.2 ( )/0.2 ( )/2.0
( )/0.2
TOTAL SCORE /30
Overall Score: __________ out of 15 Examined by: _______________________________
(Obtained Score / Total Score) x 15 (Name and Signature of concerned lab instructor)

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Rubric for Subject Project

Exceeds Meets
Developing Unsatisfactory Score
Criteria Expectations Expectations
(50%-69%) (<50%) Obtained
(>=90%) (70%-89%)
Able to Able to
Able to
Able to demonstrate demonstrate the demonstrate the
demonstrate the
the project with project with project with
project with
achievement of achievement of a*t achievement of
achievement of
required objectives least 50% required less than 50%
required objectives
Project but understanding of objectives and required
having clear
Demonstratio project limitations insufficient objectives and
understanding of
and future understanding of lacks in
n project limitations
enhancements is project limitations understanding of
and future
insufficient. and future project limitations
enhancements.
Hardware and/or enhancements. and future
Hardware and/or
Software modules Hardware and/or enhancements.
Software modules
are functional, if Software modules Hardware and/or
are fully
applicable. are partially Software modules
functional, if
functional, if are not functional,
applicable.
applicable. if applicable.
Able to achieve all

Project results the desired results Able to achieve
Able to achieve all Unable to achieve
with alternate ways most of the desired
the desired results the desired results
to improve results with errors
measurements
Project report has

Project report has no Project report has Project report has
several
grammatical and/ or very few multiple
Project Report grammatical/
spelling errors. grammatical/ grammatical/
spelling errors and
All sections of the spelling errors. spelling errors.
sentence
report are very well- All sections of the Few sections of the
construction is
written and report are report contains
poor.
technically accurate. technically accurate. technical errors.
Viva Able to answer the

Able to answer the Able to answer the
questions easily and Unable to answer
questions related to questions but with
correctly across the the questions
the project mistakes
project.
Total Marks
Name of Student: _________________________________ Roll No. __________________
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Rubric for Lab Exam
Name of Student: _______________________________ Roll No.__________________
Criteria Exceeds Meets Developing Unsatisfactory Score

Expectations Expectations
(50%-69%) (<50%) Obtained
(>=90%) (70%-89%)
Performance Able to present Able to present

Able to present No or very less
adequate sufficient
full knowledge knowledge of
knowledge of knowledge of
of both problem both problem
both problem and both problem
and solution. and solution
solution and solution
Viva Able to answer Able to answer Able to answer

the questions Unable to
the questions the questions
easily and answer the
correctly across
related to the but with
questions
the project. project mistakes
Total Score
Final Lab Assessment
Criteria Score Obtained
Laboratory Manual
Subject Project (If any)
Lab Exam
Total (50)
Examined by: _______________________________

(Name and Signature of concerned lab instructor)
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Electronic Devices and Circuits

Table of Contents
Lab No. Experiment CLOs PLOs
To follow the basic instructions for laboratory equipment functions and
1 CLO 1 PLO1
become familiar with the correct ways of operating lab instrument.
To follow the given procedure and Display the results to visualize the
2 CLO 1 PLO1
characteristics of diode
To respond the given procedure and Display the results to visualize the
3 CLO 1 PLO1
diode approximation
To follow the given procedure and Display the results to visualize the to
4 CLO 1 PLO1
study Half-Wave Rectifier circuits
5 CLO 1 PLO1
Full-Wave Center tapped Rectifier circuits.
6 CLO 1 PLO1
circuits characteristics of full wave bridge rectifier
7 circuits characteristics of full wave bridge rectifier with the effect of CLO 1 PLO1
capacitor filter
8 CLO 1 PLO1
clipper & clamper circuits.
9 CLO 1 PLO1
characteristics of Zener Diode.
10 CLO 1 PLO1
characteristics of Light Emitting Diode (LED)
To follow the given procedure and to construct the circuit of transistor

11 CLO 1 PLO1
and common emitter connection of transistor
To respond the given procedure and to construct the circuit of Base

12 CLO 1 PLO1
Biasing Technique of a Transistor.
To respond the given procedure and to construct the circuit of a typical

13 CLO 1 PLO1
junction FET & determine its trans-conduction
14 CLO 1 PLO1
characteristics of JFET
15 Open Ended
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NAME & ID: ___________________________ DATE: _____________ MARKS ________________
Experiment No: 1
OBJECTIVE:
To follow the basic instructions for laboratory equipment functions and become familiar
with the correct ways of operating lab instrument.
APPARATUS:
• DC Power Supply (Adjustable from 0-15V)
• Resistors, Inductors and Capacitors
• Breadboard
• Diodes, LEDs, BJTs and JFETs
• VOM (Analog or Digital Multi-meter)
• Oscilloscope
• Function Generator
THEORY:
RESISTOR:
Resistor is an electronic component whose function is to limit the flow of current in
an electric circuit. It is measured in units called ohms. The symbol for ohm is
Ω(omega). They are available in different values, shapes and sizes.
Every material has some resistance. Some materials such as Rubber, Glass and air
have very high opposition to current to flow. These materials are called insulators.
Other materials such as Copper, Silver and Aluminum etc., has very low resistance,
they are called Conductors.
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CAPACITOR
A capacitor (originally known as a condenser) is a passive two-terminal electrical component used to
store energy electrostatically in an electric field. By contrast, batteries store energy via chemical
reactions. The forms of practical capacitors vary widely, but all contain at least two electrical
conductors separated by a dielectric (insulator); for example, one common construction consists of
metal foils separated by a thin layer of insulating film. Capacitors are widely used as parts of electrical
circuits in many common electrical devices.
Symbol:
INDUCTORS
An inductor, also called a coil or reactor, is a passive two-terminal electrical component which
resists changes in electric current passing through it. It consists of a conductor such as a wire,
usually wound into a coil. When a current flows through it, energy is stored in a magnetic field in
the coil. When the current flowing through an inductor changes, the time varying magnetic field
induces a voltage in the conductor, according to Faraday’s law of electromagnetic induction,
which by Lenz's law opposes the change in current that created it.
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Department of Electrical Engineering
Sir Syed University of Engineering and Technology Karachi
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BREAD BOARDS:
This is the platform (or chassis) on which any circuit can be ringed up to provide inter connections
between electronics components and devices.
The advantage of bread board is, the components can be connected (or) disconnected easily. It has
holes both horizontally and vertically as shown in the figure.
The horizontal holes at the top and bottom are having internal shorts where as in the remaining part
vertical holes are shorted internally.
DIODE:
A popular semiconductor device called a diode is made by combining P & N type semiconductor
materials. The doped regions meet to form a P-N junction. Diodes are unidirectional devices that
allow current to flow through them in one direction only. The schematic symbol for a semiconductor
diode is shown. The P-side of the diode is called the anode (A), while the N-side of the diode is
called the cathode (K).
symbol of P-N diode.

.
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BIPOLAR JUNCTION TRANSISTOR (BJT):
A transistor has three doped regions there are two types of transistors one is npn and other is pnp.
Notice that for both types, the base is narrow region sandwiched between the larger collector and
moderate emitter regions.
Transistor lead Identification:

There are three leads in a Transistor called collector, emitter and base. When a transistor is to be
connected in a circuit it is necessary to identify the leads of transistor before connecting in a circuit.
The identification of the leads of transistor varies with manufacturer.
Checking a transistor with a Digital Multi-meter (DMM):

Insert the transistor in the provided slots, position the knob of DMM in hFE mode and check the hFE
value.
FIELD EFFECT TRANSISTORS (FETS):

The field effect transistor (FET) is a three terminal device similar to the bipolar junction transistor.
The FET, however, is a unipolar device, which depends on only one type of charge carriers; either
electrons or holes. There are basically two types of FETs. The junction field effect transistor,
abbreviated JFET, and the metal oxide semiconductor field effect transistor, abbreviated MOSFET.
A junction field effect Transistor is a three terminal semiconductor device in which current
conduction is by one type of carriers i.e., electrons or holes.
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Schematic symbol of JFET
Testing:
In case of FET, drain to source should be a fixed resistance in either direction.
Gate to drain or gate to source should be an open circuit or a very high resistance.
LIGHT EMITTING DIODES LEDS:

As opposed to other diodes that give off heat when conducting, LEDs emit light. In the latter, the
recombination of charge carriers across the PN junction releases optical energy when the electrons
fall from the conduction to the valence band. The heat emission is negligible in light emitting
materials like gallium arsenic phosphide and gallium phosphide.
MULTIMETRES
A Multi=meter is an electronic device that is used to make various electrical measurements, such as AC
and DC voltage, AC and DC current, and resistance. It is called a Multi-meter because it combines the
functions of a voltmeter, ammeter, and ohmmeter. Multi-meter may also have other functions, such as
diode test, continuity test, transistor test, TTL logic test and frequency test.
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FUNCTION GENERATOR
A function generator is electronic test equipment used to generate different types of waveforms over a
wide range of frequencies. Function generators are capable of producing a variety of repetitive
waveforms, generally from the list below
DC VARIABLE POWER SUPPLY
A power supply is a device that supplies electric power to an electrical load. The term is most
commonly applied to electric power converters that convert one form of electrical energy to another,
though it may also refer to devices that convert another form of energy (mechanical, chemical, solar) to
electrical energy. A regulated power supply is one that controls the output voltage or current to a
specific value; the controlled value is held nearly constant despite variations in either load current or the
voltage supplied by the power supply's energy source.
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CATHODE-RAY OSCILLOSCOPE (CRO)

The device consists mainly of a vacuum tube which contains a cathode; anode, grid, X and Y plates, and
a fluorescent screen (see Figure below). When the cathode is heated (by applying a small potential
difference across its terminals), it emits electrons. Having a potential difference between the cathode
and the anode (electrodes), accelerate the emitted electrons towards the anode, forming an electron
beam, which passes to fall on the screen.
Experimental Figures
Fig 1. Cathode Ray tube Oscilloscope Fig 2. Out Line Diagram of CRO
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POST LAB QUESTIONS
1) Explain the working of BJT Transistor?
2) What do we use Function Generator for?
3) What Safety Precaution are needed for DMM?
4) What is the value of Beta for BJT Transistor?
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Experiment No: 2
OBJECTIVE:
To follow the given procedure and Display the results to visualize the characteristics of diode.
APPARATUS:
• DC power supply (Adjustable from 0-15V)
• Bread Board
• Connecting wires
• Jumper
• Crocodile wire
• Silicon Diode (1N4001 or Equivalent)
• Resistor ½ W (1kΩ)
• VOM (Analog or Digital Multimeter)
THEORY:
A resistor is a linear device because its voltage & current are proportional in either direction. A diode on
other hand is non-linear device because its voltage & current are not proportional. Furthermore, a diode is a
unilateral device because it conducts well only in forward direction. As a guide a small signal diode has a
reverse /forward resistance ratio of more than 1000:1. In this experiment you will measure diode voltage &
current for both forward & reverse bias.
CIRCUIT DIAGRAM:
FORWARD BIAS REVERSE BIAS
Fig. 1-1 Fig. 1-2
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QUALITATIVE ANALYSIS:
DIODE: A diode is a two terminal device that allows current to flow only in one direction & stables
the voltage.
FORWARD BIAS: when n-type is connected to the negative terminal of the battery & p-type is connected to
the positive terminal of the battery is called forward bias.
REVERSE BIAS: when n-type is connected to the positive terminal of the battery & p-type is connected to
the negative terminal of the battery is called reverse bias.
QUANTITATIVE ANALYSIS:
Applying KVL
VS-VR-VD=0
When VD=0; current is also zero and there is no biasing. When VD>0; is
conducted & it is forward biasing
When VD<0; voltage becomes negative it is called reverse biasing.
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PROCEDURE
1. Using the VOM as an Ohmmeter measure the diode DC forward resistance & reverse Resistance on one of the
middle resistance ranges. If diode is all right, you should have a reverse/forward resistance ratio greater than
1000:1.
2. Connect the circuit of Fig 1-1 using a current limiting resistor of 1kΩ.for each source voltage listed in table 1-1
measure & record the diode voltage VD& diode current ID.
3. Connect the Circuit of Fig 1-2. For each source voltage listed in table 1-2 measure & record the diode voltage
VD& diode current ID.
4. Graph the data of table 1-1 & 1-2 to get a diode a curve (ID versus VD).
OBSERVATION:
Table 1-1: Forward Bias
Source Voltage (Vs) (V) Diode Voltage (VD) (V) Diode Current (ID) (mA)
0V
0.5V
1V
2V
4V
6V
8V
10V
15V
Table 1-2: Reverse Bias
Source Voltage (Vs) (V) Diode Voltage (VD) (V) Diode Current (ID) (mA)
-1V
-5V
-10V
-15V
RESULT:
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POST LAB QUESTIONS
1) What is diode?
2) What do we use diodes for?
3) What is knee voltage?
4) What is the value of knee voltage for Si diode?
5) What is the value of knee voltage for Ge diode?
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Experiment No: 3
OBJECTIVE
To respond the given procedure and Display the results to visualize the diode approximation.
APPARATUS:
• DC power supply adjustable from 0 – 15V
• Bread Board
• Connecting wires
• Jumper
• Crocodile wire
• Silicon Diode (1N4001 or Equivalent)
• Resistor1/2W (220Ω, 220Ω, 470Ω)
• Silicon diode
• Digital multi meter
THEORY:
In this experiment you will work with the diode approximation. In the ideal or first approximation a diode act
like a closed switch when forward bias, an open switch when reverse bias. In the second approximation we include the
knee voltage of the diode when it is forward biased. This means assuming 0.7v across the conducting silicon diode. In
the third approximation we include the knee voltage and bulk resistance, because of this, the voltage across the
conducting diode is increase as the diode current increase.
CIRCUIT DIAGRAM:
Fig. 2-1
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THE FIRST APPROXIMATION:
It is the ideal diode

The first approximation of a diode is simply a “switch". If the diode is "forward biased”, the switch is closed.
the diode behaves as a conductor, with ohm of resistor.
THE SECOND APPROXIMATION:
The second approximation require 0.7 volt of forward bias to overcome the barrier potential, when reverse
bias no current will flow. The switch is open in reverse bias.
THE THIRD APPROXIMATION:
The third approximation includes both the 0.7-volt barrier potential and the internal resistance of the diode
called bulk resistance.
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FIRST APPROXIMATION:
I=Vs/R :Vd=0
SECOND APPROXIMATION:
Vd=0.7V
I=(Vs-Vknee)/R
THIRD APPROXIMATION:
I=(Vs-Vknee)/(R=rB)
RB=Vd/Id
Where;
RB=Bulk resistance
Id= diode current
Vd=change in diode voltage
PROCEDURE:
1.Connect the circuit of Fig 2-1. Adjust the source voltage listed in table 2-1, measure & record the diode voltage V D&
diode current ID.
2.We will let the knee voltage to be the measured diode voltage for a source voltage of 2V. Record the knee voltage in
table 2-2 (it should be in the vicinity of 0.7V).
3.Calculate the bulk resistance using
rB = ∆V / ∆I
Where ∆V & ∆I are the changes in measured voltage & current in table 2-1.
Record rB in table 2-2.
4.Adjust the source voltage of Fig 2-1 at 15V. Measure & record the diode current in table 2-3. Then calculate the diode
current with the ideal, second & third approximations (use the Vknee&rB of table 2-2). Record answer in table 2-3.
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OBSERVATION:
Table 2-1: Two points on the forward curve
Source Voltage Vs (V) Diode Voltage VD (V) Diode Current ID (mA)

2V
10V
Table 2-2: Diode Values
Vknee
IB
Table 2-3: Diode Current
Vs 15V
Ideal I =VS/R
Second I=(Vs-Vknee)/R
Third I =(VS – Vknee)/ (R=rB)
Measured I
RESULT:
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POST LAB QUESTIONS
 What is the first approximation?
 What is ideal diode model?
 What is the effect of dc or static resistance?
 What is bulk resistance?
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Experiment No: 4
OBJECTIVE:
To follow the given procedure and Display the results to visualize the to study Half-Wave Rectifier circuits
APPARATUS:
 Transformer AC Centre tapped (Triad F-25X or equivalent) with fuse line cord
 Resistor½W (1kΩ)
 Silicon Diode(1N4001or equivalent)
 Digital multi meter (Analog & Digital Multimeter)
 Oscilloscope
 Connecting wires
 Jumper
 Crocodile wire
THEORY:
The basic rectifier circuits are half wave, full wave & bridge. The ripple frequency of half wave
rectifier circuit is equal to the input frequency. For a given transformer the unfiltered output of the
half wave & full wave rectifier ideally-has a DC value of slightly less than half the RMS secondary
voltage.
In this experiment, you will build a type of rectifier & measure their input /output characteristics. Be
careful when connecting the transformer line voltage. The transformer should have a fused line cord
with all primary connections isolated to avoid electric shock.
CIRCUIT DIAGRAM:
Input Voltage Waveform Half-WaveRectifier RectifiedoutputVoltage/Current
Waveform
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TASK:To study & demonstrate full wave centre tapped rectifier circuit.
Fig. 3-1
QUALITATIVE ANALYSIS;
HALF WAVE RECTIFIER:

It converts low level AC signal to DC and gives 50% cycle.
TRANSFORMER:
A transformer is a power converter that transfers electrical energy from one circuit to another through
inductively coupled conductors—the transformer's coils. A varying current in the first or primary winding creates
a varying magnetic flux in the transformer's core and thus a varying magnetic field through the secondary
winding. This varying magnetic field induces a varying electromotive force (EMF), or "voltage", in the secondary
winding. This effect is called inductive coupling.
STEP UP TRANSFORMER:
A step up transformer is one whose secondary voltage is greater than its primary voltage. TJ*e kind of
transformer "steps up" the voltage applied to it.
\
STEP DOWN TRANSFORMER:
A step down transformer is one whose primary voltage is greater than its secondary voltage.
QUANTITATIVE ANALYSIS
Vin-VD-Vo=0
Or Vo =Vin-VD
PROCEDURE:
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1. Connect the circuit of Fig 3-1. Measure the RMS voltage across the secondary winding & record in table 3-
1.
2. Measure & record DC load voltage across 1kΩ load resistor.
3. Use an oscilloscope to look at rectified voltage across 1kΩ load resistor. Record the peak voltage of half-
wave signal. Next measure the period of the rectified output. Calculate the ripple frequency & record the
result in table 3-1.
4. Calculate the peak output voltage across 1kΩ load resistor. Also calculate the output voltage & ripple
frequency. Record your calculation in table 3-1.
OBSERVATION:
Table 3-1 Half-Wave Rectifier
FORMULA CALCULATED MEASURED
RMS secondary voltage Write measured value
Peak output voltage Vo.pk = Vpk -0.7
DC output voltage Vo.DC = Vo.pk / π
Ripple frequency Fripple = fin
RESULT:
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POST LAB QUESTIONS
 What is the object of this experiment?
 What is half wave rectifier circuit?
 What is full wave rectifier circuit?
 What are periodic signals?
 AC signals are periodic or A-periodic?
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Experiment No: 5
OBJECTIVE:
To respond the given procedure and Display the results to visualize the Full-Wave Center tapped Rectifier
circuits.
APPARATUS:
 Transformer AC Centre tapped (Triad F-25X or equivalent) with fuse line cord
 Resistor1/4W (1kΩ)
 Silicon Diode(1N4001or equivalent)
 Digital multi meter
 Oscilloscope
 Jumper
 Crocodile wire
 Bread board
THEORY:
Another basic rectifier circuit is full wave center tapped rectifier circuit. The ripple frequency of full
wave rectifier circuit is twice to the input frequency. For a given transformer the unfiltered output of the
full wave rectifier ideally has a DC value of slightly less than half the RMS secondary voltage [45%).
While the unfiltered output of the bridge rectifier is slightly less than the RMS secondary voltage (90%].
In this experiment, you will build a type of rectifier & measure their input /output characteristics. Be
careful when connecting the transformer line voltage. The transformer should have a fused line cord with
all primary connections isolated to avoid electric shock.
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CIRCUIT DIAGRAM:
Fig. 4-1
OUALITATIVE ANALYSIS:
RECTIFIER:
A rectifier is an electrical device that converts alternating current into direct current.
FULL WAVE RECTIFIER:
A device that converts low level AC signal to DC and gives 100% cycle.
CENTRE TAP FULL WAVE RECTIFIER: In such a rectifier, the ac input is applied through a
transformer, the anodes of the two diodes D1 and D2 (having similar characteristics) are connected to
the opposite ends of the Centre tapped secondary winding and two cathodes are connected) each other
and are connected also through the load resistance RL and back to the Centre of the transformer.
*Vopk = Vp-0.7
*Vo.dc=Vopk/3.1415
*Vdc=0.636(Vm-Vk)
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INPUT VOLTAGE Centre-Tap Full-Wave Rectifier

WAVEFORMS
-I
RECTIFIED OUTPUT
VOLTAGE/CURRENT
WAVEFORM
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PROCEDURE:
1. Connect the circuit of Fig 4-1.
2. Use an oscilloscope to look at rectified voltage across 1kΩ load resistor. Record the peak voltage
of Half-Wave signal. Next measure the period of the rectified output. Calculate the ripple
frequency & record the result in table 4-1.
3. Calculate the peak output Voltage across 1kΩ load resistor. Also calculate the output voltage &
ripple frequency. Record your calculation in table 4-1.
4. Connect the center tap rectifier circuit of Fig 4-1.
5. Calculate & measure the qualities listed in table 4-1, record in table 4-1.
OBSERVATION:
Table 4-1 Full-Wave Rectifier
RMS secondary voltage Write measured

value
Peak output voltage Vo.pk = Vpk-0.7
DC output voltage Vo.dc = 2Vo.pk / π
Ripple frequency Fripple = 2fin
RESULT:
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TASK
 To study the negative Full-wave rectifier.

1. Find the peak output rectified voltage across load resistor.
2. Find the peak voltage of negative half-wave signal.
3. Find DC load voltage across 1kΩ load resistor.
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POST LAB QUESTIONS
 What is full wave rectifier circuit?
 What is a rectifier?
 What is the advantage of using a full wave rectifier?
 What is ripple frequency?
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Experiment No: 6
OBJECTIVE:
To respond the given procedure and Display the results to visualize the circuits characteristics of full
wave bridge rectifier
APPARATUS:
 Transformer AC center tapped (Triad F-25X or equivalent) with fuse line cord
 DC power supply
 Bread Board
 Jumper
 Crocodile wire
 Silicon Diode(1N4001 or equivalent)
 Resistor1/2W (1kΩ)
 Oscilloscope
THEORY:
By connecting input of a bridge rectifier to a capacitor input filter we can produce a DC load voltage
that is approximately constant ideally the filtered DC output voltage equal to the peak secondary
voltage.
CIRCUIT DIAGRAM:
Fig. 5-1
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FULL WAVE RECTIFIER: The DC level obtained from a sinusoidal input can b improved
100% using a process called Full wave rectification.
TRANSFORMER: A transformer is a power converter that transfers electrical energy from

one circuit to another through inductively coupled conductors—the transformer’s coils. A
varying current in the first or primary winding creates a varying magnetic flux in the
transformer's core and thus a varying magnetic field through the secondary winding.
DIODE: A diode is a two-terminal electronic component with asymmetric transfer
characteristic, with low (ideally zero) resistance to current flow in one direction, and high
(ideally infinite) resistance in the other.
RESISTOR: A resistoris a passivetwo-terminal electricalcomponent that
implements electrical resistance as a circuit element The current through a resistor is
indirect proportion to the voltage across the resistor's terminals. This relationship is
represented by Ohm's law: I=V/R
*Vopk = Vp-1.4
*Vo.dc=2Vopk/3.1415
*Vdc=0.636(Vm-Vk)
PROCEDURE:
1. Connect the center tap rectifier circuit of Fig 5-1.

3. Use an oscilloscope to look at rectified voltage across 1kΩ load resistor. Record the peak voltage
of Half-Wave signal. Measure the period of the rectified output. Calculate the ripple frequency &
record the result in table 5-1.
4. Calculate peak output voltage across 1kΩ load resistor. Also calculate the output voltage& ripple
frequency. Record your calculation in table 5-1.
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5. Calculate & measure the quantities listed in table 5-1.
Observation:
Table 5-1
RMS secondary voltage Write measured

value
Peak output voltage Vo.pk = Vpk-1.4
DC output voltage Vo.dc = 2Vo.pk / π
Ripple frequency Fripple = 2fin
RESULT:
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POST LAB QUESTIONS
1) Which diode is used in the circuit?
2) How much diode we use in full wave?
3) What is the purpose of rectifier?
4) Which type of signal is found in output?
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9
Experiment No: 7
OBJECTIVE
To follow the given procedure and Display the results to visualize the circuits characteristics of full wave
bridge rectifier with the effect of capacitor filter.
APPARATUS:
 Transformer AC center tapped (Triad F-25X or equivalent) with fuse line cord
 DC power supply
 Bread Board
 Jumper
 Crocodile wire
 Diode
 Resistor1/2W (1kΩ, 10kΩ)
 Silicon diode(1N4001 or equivalent)
 Oscilloscope
 Capacitor (47µf & 470µf) 25V rating or better
THEORY:
By connecting input of a bridge rectifier to a capacitor input filter we can produce a DC load voltage that is
approximately constant Ideally the filtered DC output voltage equal to the peak secondary voltage.
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CIRCUIT DIAGRAM:
Fig 6-1
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QUALITATIVEANALYSIS:
 CAPACITOR: An electric circuit element used to store charge temporarily, consisting in general of
two metallic plates separated and insulated from each other by a dielectric. Also called condenser.
 TRANSFORMER: A transformer is a power converter that transfers electrical energy from one
circuit to another through inductively coupled conductors—the transformer's coils. A varying current
in the first or primary winding creates a varying magnetic flux in the transformer's core and thus a
varying magnetic field through the secondary winding.
 DIODE: A diode is a two-terminal electronic component with asymmetric transfer characteristic,
with low (ideally zero] resistance to current flow in one direction, and high (ideally infinite) resistance
in the other.
 RESISTOR: Aresistor is a passive two-terminal electrical component that
implements electrical resistance as a circuit element The current through a resistor is in direct
proportion to the voltage across the resistor's terminals. This relationship is represented by Ohm's
law:
I=V/R
PROCEDURE:
1. In the Fig 6-1, note down the RMS voltage.

2. Build the circuit of Fig 3-1 with RL =1kΩ & C = 47µf. calculate & measure all the quantities listed in table
6-1.
3. Repeat step 2 for RL= 1kΩ & C = 470µf & record in table 6-2.
4. Repeat step 2 for RL= 10kΩ & C = 470µf & record in table 6-3.
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Observation:
Table 6-1: RL = 1kΩ & C = 47µf
FOMULA CALCULATED MEASURED
RMS secondary voltage
Peak output voltage VO.pk = VP – 1.4
DC output voltage VO.DC = (1-(1/2fRC)) VO.pk
DC load current I = VO.DC /RL
Ripple frequency f = 2fin
Peak-to-peak ripple Vr(pp) = VO.pk/fRC
Ripple factor Vr(pp)/ VO.DC
Table 6-2: RL = 1kΩ & C = 470µf
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9
Table 6-3: RL = 10kΩ & C = 470µf
RESULT:
QUESTIONS:
1) Which diode is used in the circuit?
2] How much diode we use in full wave?
3] What is the purpose of capacitor?
4] Which type of signal is found in output?
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9
Experiment No: 8
OBJECTIVE
To respond the given procedure and Display the results to visualize the clipper & clamper circuits.
APPARATUS:
 Power supply (adjustable From 0 to 15V)

 Resistors 1/2W (1kΩ, 100kΩ)
 Capacitor (1µf)
 Diode (1N4001 or 1N914)
 VOM (Analog or Digital Multimeter)
 Functional generator
 Oscilloscope
THEORY:
CLIPPER
The clippers circuits have ability to clip off a portion of a signal without distribute the remaining part of signal.
There are two general categories of clippers, series & parallel.
SERIES CLIPPERS
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PARALLEL CLIPPERS
CLAMPERS
The clamping network is one that will clamp a signal to a different DC level.
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9
• CLIPPER: clipper circuit is a non-linear wave shaping circuit which is used to remove or clip the
positive half cycle and negative half cycle or some portion of the waveform. Clipper circuits are further
divided into four
1. Positive clipper
2. Negative clipper
3. Biased clipper
4. Combinational clipper
Circuit Diagram:
Fig. 7-1 Fig. 7-2 Fig 7-3
 Fig. 7-1 (Series clipper circuit).
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9
 Fig. 7-2 (Parallel clipper circuit).

 Fig .7-3 (clamper circuit).
PROCEDURE:
1. Connect the component of each circuit.

2. Apply voltage to circuit.
3. Sine a rectangular wave according to Fig 7-1, 7-2, &7-3 one by one.
4. Observe the output wave form.
OBSERVATION:
Table 7-1
SERIES CLIPPER PARALLEL CLAMPER

CLIPPER
Peak to Peak Voltage VP-P=
Peak output voltage Vo.dc =
DC output voltage Vo.dc =
Ripple frequency Fripple =
RESULT:
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9
POST LAB QUESTIONS:
1) What is clipper circuit?
2) How many kinds of clipper are there?
3) What is positive clipper?
4) What is negative clipper?
5) What is the object of this experiment?
6) What is clamper circuit?
7) Define positive clamper.
8) What is negative clamper?
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9
Experiment No: 9
OBJECTIVE
To follow the given procedure and Display the results to visualize the characteristics of Zener
Diode.
APPARATUS
 DC Dual power supply(adjustable From 0 to 15V)
 Resistor1/2W (220Ω)
 Zener Diode(1N753)
 Jumper
 Crocodile wire
 Bread board
THEORY:
In this experiment, you will get data for the zener voltage &zener resistance. Ideally a zener
diode is equivalent to a DC source when operating in a breakdown region. To second approximation
it is like a DC source with small internal impedance. Its main advantage is the approximately
constant voltage appearing across it
CIRCUIT DIAGRAM:
Fig. 8-1 Fig. 8-2
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9
QUALITATIVE ANALYSIS
 Zener Diode: A zener diode is a special kind of diode which allows current to flow in the forward
direction in the same manner as an ideal diode, but will also permit it to flow in the reverse
direction when the voltage is above a certain value known as breakdown voltage.
 ZENER KNEE CURRENT: The current corresponding to a knee point is called zener knee
current & it is the min current zener must carry to operate in reverse bias region. It is denoted by
Zk.
 ZENER MAXIMUM CURRENT: The max current zener diode can carry safely is called zener
max current. It is denoted by Zm.
 ZENER TEST CURRENT: The test current lies-between the knee & max current & it is denoted
by ZT.
Pz=vzIz
&
Vz=IzRz
PROCEDURE:
1. Measure diode reverse & forward resistance on one of the middle resistance ranges. If diode is all
right, you should have a reverse/forward resistance ratio should be at least 1000:1.
2. The 1N753 has a nominal zener voltage of 6.2V. in Fig 8-1. Connect the circuit of Fig 8-1. Measure &
record output voltage &zener current for each input voltage listed in table 8-1.
3. With data of table 8-1, calculate & record the in Fig 8-1 for each entry of table 8-2.
4. Calculate zener resistance for Vin = 10V
5. Also calculate zener resistance for Vin = 12V
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9
OBSERVATION:
Table 8-1:
INPUT
VOLTAG MEASURED Vz (V) MEASURED Iz (mA)
E Vin (V)
FORWARD REVERSE FORWARD REVERSE

0
2
4
6
8
10
12
14
ZENER RESISTANCE
Table 8-2:
INPUT VOLTAGE CALCULATED Iz CALCULATED

Vin (V) (mA) Rz (KΩ)
0
2
4
6
8
10
12
14
RESULT
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9
POST LAB QUESTIONS:
 What are the uses of zener diode?
 Define zener max current.
 What is breakdown voltage?
 What is zener knee current?
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9
Experiment No: 10
OBJECTIVE
To respond the given procedure and Display the results to visualize the characteristics of Light Emitting Diode
(LED)
APPARATUS
 Power supply(adjustable from 0 to 15V).
 Light emitting diode (LED)
 Resistor½W (1kΩ)
 Bread board
 Crocodile wire
THEORY: A resistor is a linear device because its voltage and current are proportional in either
direction. A diode on other hand is no linear device because its voltage and current are not
proportional .Furthermore a diode is a unilateral device because it conduct well only in forward
direction In this experiment you will measure diode (LED) voltage and current for both reverse and
forward bias.
CIRCUIT DIAGRAM:
Fig. 9-1 Fig. 9-2
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9
 LED: Light emitting diodes are diodes (electronic components that let electricity pass in only
one direction) that emit visible light when electricity is applied, much like a light bulb. When
many LEDs are side-by they can create pictures, such as the scrolling red LED signs found
everywhere.
PROCEDURE:
1. Using the VOM as an Ohmmeter measure the diode DC forward resistance & reverse Resistance on
one of the middle resistance ranges. If diode is all right. You should have a reverse/forward resistance
ratio greater than 1000:1.
2. Connect the circuit of Fig 9-1 using a current limiting resistor of 1kΩ. for each source voltage listed in
table 9-1 measure & record the diode voltage V & diode current I.
3. Connect the Circuit of Fig 9-2. For each source voltage listed in table 9-2 measure & record the diode
voltage V & diode current I.
4. Graph the data of table 9-1 & 9-2 to get a diode a curve (I versus V).
OBSERVATION:
Table 9-1: Forward Bias
Source Voltage Vs Diode Voltage VD Diode Current ID
0V
0.5V
1V
2V
4V
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6V
8V
10V
15V
Source Voltage Vs Diode Voltage VD Diode Current ID
-1V
-5V
-10V
-15V
RESULT
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POST LAB QUESTIONS
1) Name two types of LED in terms of light emitting spectrum?
2) What happen to the light emission of LED as the forward current increase?
3) What is the object of this experiment?
4) What is the range of voltage Vs for LED?
5) Which has the greater wavelength infrared or visible light?
56
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Experiment No: 11
OBJECTIVE
To follow the given procedure and to construct the circuit of transistor and common emitter connection
of transistor
APPARATUS:
 Power supply (adjustable From 0 to 15V)

 Transistor (2N3904 or any NPN silicon transistor)
 Resistor 1/2W (100Ω, 1kΩ, 470kΩ)
 VOM (Analog or Digital Multimeter)
THEORY:
As an approximation of transistor behavior, we use the Ebers-Moll model. The emitter diode acts
like a controlled current source. The voltage across the emitter diode of a small signal transistor is
typically 0.6 to 0.7V. For most troubleshooting & design, we will use 0.7V for the VBE drop. In this
experiment, you will get data for calculating the αdc, βdc & the VBE drop.
DIODE: A diode is a specialized electronic component with two electrodes called cathode and
anode. Most diodes are made up of semiconductor materials (silicon
and germanium).
TRANSISTOR: These are three terminal devices of 3 se base, collector and emitter. It is used as an
amplifier
CIRCUIT DIAGRAM:
Fig. 10-1
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PROCEDURE:
1. Measure the resistance between the collector & emitter of one of the transistor. This resistance
should be extremely high (hundreds of mega ohms) in either direction.
2. Measure the reverse & forward resistance of the base-emitter diode & base collector diode. For
both diode reverse/forward resistance ratio should be at least 1000:1.
3. Repeat step 1 & 2 for the two other transistors.
4. Connect the circuit of Fig 9-1, using one of the transistors.
5. Measure & record VBE & VCE in table 10-1.
6. Measure & record IC& IB in table 10-1.
7. Calculate the values of VCB, IE, αdc, βdc in Fig 10-1. Record in table 10-2.
8. Repeat step 4 to 7 for two other transistors.
9. If the curve tracer is available, display the collector curve of all three transistors. Notice the
difference in βdc, breakdown voltages etc.
OBSERVATION:
Table 10-1:
Transistor VBE VCE IB IC

2N3904
1.
2.
3.
Table 10-2:
Transistor VCB IE αdc βdc

2N3904
1.
2.
3.
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RESULT:
POST LAB QUESTION
Q1 what is a transistor and types of transistors
Q2 what is bipolar junction transistor?
Q3 what are the types of transistor configurations?
Q4 what is power dissipated by transistor in active region
59
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Experiment No: 12
OBJECTIVE:
To respond the given procedure and to construct the circuit of Base Biasing Technique of a
Transistor.
APPARATUS:
 Power supply 15V
 Transistor (2N3904)
 Resistor 1/2W (2.2kΩ, 22kΩ)
 Decade resistance box or potentiometer
THEORY:
A circuit like Fig 9-1 is referred to as base bias because its sets up a fixed base current. You can
calculate the base current by applying Ohm’s law to the total base resistance. This base current will
remain constant when you replaced transistor.
On the other hand the collector current equals the current gain time the base current. Because of
this the collector current may have large variation from one transistor to next. In other words the Q point
in a base bias circuit is heavily dependent on the value of βdc.
CIRCUIT DIAGRAM:
Fig. 11-1
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• BASE BIAS: base bias is the simplest way to bias a BJT transistor. Base bias ensures that the
voltage fed to the base, VBB is the correct voltage high then supplies the correct current so that the
BJT has enough base current to switch the transistor on
PROCEDURE:
1. The fixed base current circuit of Fig 11-1 is not a stable biasing circuit, but it is a good way to
measure βdc.
2. Connect the circuit of Fig 10-1 using one of transistor.
3. Adjust R to get a VCE of1V. Record the value of R in table 11-1. In Fig 11-1, notice the total base
resistance RB = R + 22kΩ. Record the value of RB in table 11-1.
4. Calculate the value of βdc, IC. Record in table 11-1.
5. Repeat step 2 to 4 for the two other transistor.
6. With the value of table 11-1, calculate the ideal & second approximation values of I E in Fig 11-1.
Record the value of IE in table 11-2.
OBSERVATION:
Table 11-1: βdc values
Transistor R RB βdc IC
1.
2.
3.
Table 11-2: Calculation
Test IE(ideal) IE(second)
1.
2.
3.
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RESULT
POST LAB QUESTION

Q1 Disadvantages of Base Bias Method
Q2 List out different type of biasing
Q3 what is thermal run away in a transistor
Q4 what are the factors to be considered to design a biasing circuit
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Experiment No:13
OBJECTIVE:
To respond the given procedure and to construct the circuit of a typical junction FET & determine its
trans-conduction
APPARATUS:
 Power Supply (adjustable from 0 to 15V).

 Silicon Diode (1N914 or equivalent).
 Resistor (½W) (100Ω, 1kΩ, 1kΩ)
 N-channel FET transistor.
 Potentiometer (1kΩ, 100kΩ,)
THEORY:
In this practical you will examine the relationship between the gate-to-source voltage (V GS), the
drain current (ID), and the drain-to-source voltage (VDS) in an N-channel junction FET. You will first
measure & record the corresponding VGS, ID& VDS value & then plot these values to form a set of drain
characteristics curve. Then you will complete the experiment by using this curve to determine the
transconductance of the FET.
CIRCUIT DIAGRAM:
Fig 12-1
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PROCEDURE:
1. Construct the circuit shown in Fig 12-1.

2. Applied voltages to 1kΩ potentiometer. You will be using this potentiometer to control the drain-
to-source voltages (VDS) applied to the FET.
3. Turn the potentiometers fully clockwise & then turn on your circuit.
4. The gate-to-source voltage (VGS) applied to the FET will be zero. Adjust potentiometer until the
drain-to-source voltage (VDS) is equal to 1 volt.
5. Use the volt meter to measure the voltage across R4. Use this voltage reading & the resistance of
the R4 to calculate the FET’s drain current (ID) according to Ohm’s law. Record your calculated
value in table 12-1 ID (milliamperes).
6. Now adjust R1 so that VGS is equal to 0.25 volts.
7. Adjust the R5 until VDS is equal to 1 volt.
15. Now use the corresponding values of VDS& ID that you recorded in the table 12-1 to plot the drain
characteristic curves on the graph. Connect the various points plotted to form a continuous curve.
Label this curve VGS = 0.
16. Now use the corresponding values of VDS& ID that you recorded in the table 12-2to plot the drain
Label this curve VGS = 0.25.
19. Now use the set of drain characteristic curve that you plotted in graph to determine the
transconductance of FET. Select a constant value of VDS that is well above the pinch-off voltage
of the device (possibly 6 or 7 volts) & observe the change in ID when VGS changes from 0-to-0.25
volts.
Transconductance = ∆ ID
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∆ VGS
OBSERVATION:
Table 12-1
VGS.0 volts
VDS (volts) 1 2 3 4 5 6 7 8
ID (milliamperes)
Table 12-2
VGS.0.25 volts
VDS (volts) 1 2 3 4 5 6 7 8
ID (milliamperes)
Table 12-3
VGS.05 volts
VDS (volts) 1 2 3 4 5 6 7 8
ID (milliamperes)
Table 12-4
VGS.0.75 volts
VDS (volts) 1 2 3 4 5 6 7 8
ID (milliamperes)
RESULT
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POST LAB QUESTION

Q1 Why thermal runaway is not there in FETs
Q2 How FET is known as Voltage variable resistor?
Q3 what is Trans conductance?
Q4 what is Dynamic Output Resistance
66
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Experiment No:14
OBJECTIVE:
To follow the given procedure and Display the results to visualize the characteristics of JFET
APPARATUS:
• Power Supply (adjustable from 0 to 15V).
• Silicon Diode (1N914 or equivalent).
• Resistor (½W) 100Ω.
• JFET transistor.
• Functional Generator
• Oscilloscope
THEORY:
The purpose of this experiment is to use the oscilloscope to display the transfer characteristics
curve for the MPF102. This curve shows the parabolic or square law, variation of the drain current as a
function of the gate-to-source voltage. From such a curve it is possible to estimate JFET parameters such
as the drain current with gate shorted to source, IDSS; the gate-to-source cutoff voltage, VGS & the forward
Tran conductance, gm0. The values of these parameters are used in performing.
CIRCUIT DIAGRAM:
Fig 13-1
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PROCEDURE:
1. Connect the circuit of Fig 13-1. The oscilloscope is set up to function as an X-Y plotter. Y input:
0.2V / division. X input sensitivity: 1V / division.
2. Now apply Power & Functional generator to the circuit.
3. Adjust frequency to 500 Hz & at a signal level sufficient to produce a display. The horizontal
input measured the JFET instantaneous gate-to-source voltage (VGS). The diode allows only
negative voltage variations, which serve as the drain-to-source voltage. The vertical input
measures the voltage dropped across the 100Ω resistor. As shown the display, the vertical axis
increases downward, this is inverted from the normal sense. Using Ohm’s Law, we can make the
vertical input read the JFET’s instantaneous drain current IDSS. If the vertical sensitivity is 0.2V /
division, then in the terms of the current through the 100Ω resistors (which is the same as the
drain current),
0.2V / division
Vertical sensitivity = --------------------
100Ω
= 2mA / division
4. Using Fig 13-1 as a guide both IDSS &VGS(off) for the JFET you are using. Record these values in
table 13-1.
5. From the value for IDSS &VGS(off) measure in step 4, calculate the JFET forward Tran conductance
at Zero gate-to-source voltage, gm0, & record this value in the table 13-1.
OBSERVATION:
IDSS mA
VGS V
Gm0 µS
RESULT
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POST LAB QUESTION

Q1 what is a Junction Field Effect Transistor also explain the characteristics of JFETS
Q2 write down the merits and demerits of JFETS
Q3 Explain the classifications of JFET
Q4 Explain the Modes of FETs
69
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Electronic Devices and Circuits (EL-123) Laboratory Manual

Electrical Engineering Laboratory Manual

ELECTRONIC DEVICES AND CIRCUITS

2nd Semester Electrical Engineering

BATCH: 2020 SECTION: ___________________

ROLL NO: _____________________________________________

LAB INSTRUCTOR: _____________________________________

DEPARTMENT OF ELECTRICAL ENGINEERING

University Road, Karachi-75300

Electronic Devices and Circuits (EL-123) Laboratory Manual

Sir Syed University of Engineering & Technology, Karachi

Electronic Devices & Circuits (EL-123), Semester: 2nd, Batch: 2020

Name of Student: ________________________________Roll No. __________________

Exceeds Expectations Meets Expectations Developing Unsatisfactory

Able to follow the

Able to achieve all the

Fairly alert to Rarely alert to

Electronic Devices and Circuits (EL-123) Laboratory Manual

Sir Syed University of Engineering & Technology, Karachi

Electronic Devices & Circuits (EL-123), Semester: 2nd, Batch: 2020

Name of Student: ________________________________ Roll No. __________________

Lab Description & Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Lab Report

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

Experimental Setup Procedure Results Safety Lab Report Score

TOTAL SCORE /30

Overall Score: __________ out of 15 Examined by: _______________________________

Sir Syed University of Engineering & Technology, Karachi

Electronic Devices and Circuits (EL-123) Laboratory Manual

Electrical Engineering Department

Electronic Devices & Circuits (EL-123), Semester: 2nd, Batch: 2020

Able to achieve all

Project report has

Viva Able to answer the

Electronic Devices and Circuits (EL-123) Laboratory Manual

Sir Syed University of Engineering & Technology, Karachi

Electronic Devices & Circuits (EL-123), Semester: 2nd, Batch: 2020

Name of Student: _______________________________ Roll No.__________________

Criteria Exceeds Meets Developing Unsatisfactory Score

Performance Able to present Able to present

Viva Able to answer Able to answer Able to answer

Final Lab Assessment

Criteria Score Obtained

Subject Project (If any)

Examined by: _______________________________

Name of Student: ______________Roll No.

Name of Student: ______________ Roll No.

Overall Score: out of 15 Examined by: _____________________

Name of Student: _____________ Roll No.

NAME & ID: _____________________ DATE: _ MARKS __________

NAME & ID: _____________________ DATE: _ MARKS __________

NAME & ID: _____________________ DATE: _ MARKS __________

NAME & ID: _____________________ DATE: _ MARKS __________