Emosfet - 1
Emosfet - 1
Emosfet - 1
ConsirtaChoN0-channe) E moSFET)
is forrmeofnom a Si llcon base
A A Sab of P-ype maerda
rteferuuo as Scuhsthahe
The Source and drain iertminals aNU Conne ctea -inrrough
mejallt contocksto n-doped rugíens.
SiO, layen is prcesen}to isolate the gate metallic parform
frrom The rcaqion betwean drran Ond courc
D. n h o channel
P-+ye Suhstnot
G Suhstoe
n
S
SiO
Worckin9
No =O
Vhe Some tve valkue
aA no Chonne
Ih OV.
holeg o
the
()posive potenhthial a gae tul) prrestuCR
electrroOr)s
en ten deopen regions p-Suubsthate. and
CourcR
This level f Vos catlad
Vos hreshold volla(VT)
No draun ruron
When VGs V
Drau CururonF
VasVg
beyondHis
Vthe derciHy ffree
hs Vas incneaso n
Caroden in dumd channe wi incorease, Kexelting
The
i.
.e gahe wil l e and less postHve w.ru nan.
The redoction in gae ho- drraun vollage
P
VDs
Sahs.
Axed)
, fon V V O
Eayuann
9 K ( Vas-V) Vos V
K lon)
Chanacerri&ics
as
Thans-fen Canackoni ens.
e -ve
-Ve
Drain chanacreriHCS Vns
Vnc
+ve
-Yo
Trancfen hanackeriica Vos =
+ve
(mA) 'n(mA)
10 N-8V
s 7V
- Vis +V
20
FIG. 6.39
Multisim
P'Splee kete ine the tninsterahutnuteristi s pr an n
hunelenhutmeement tve AMONE TI nm ihe dun hunt tenntie
(mA) p (mA)
8 - Vas=-6 V
D
5
- Vos=-5 Vv
G SS
2 Vas-4V
Vos-3V
+o -6 -5-4 -3-2 -1 0
D
VGs Vos V=-2V Vps
os
n-channel p-channel
9D 9D
- SS -o SS
G G
9D 9D
(a) (b)
FIG. 6.42
n-channel enhancement-type
Symbols for (a)
MOSFETs and (b) p-channel enhancement.
type MOSFETs.
Equations
JFET:
Vos
loas1 Vp
Ip =Ipsslvas=0 V» lp=0mAlVas=Vp D pss
4 Ves=Vp/2Vas0.3Vl
VesVe
Ipss
Pp VpsND
o
(1- Vas/V)
MOSFET (enhancement):
I k{VGsV7)
k =
D(on)
(VGs(on) Vr)