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Emosfet - 1

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F- MOSFET

ConsrzuctHon is quite similan to thor of D-MosfET,


except Hon he absence of a chonnel beweon the droin& Sor Ce
teromina.

ConsirtaChoN0-channe) E moSFET)
is forrmeofnom a Si llcon base
A A Sab of P-ype maerda
rteferuuo as Scuhsthahe
The Source and drain iertminals aNU Conne ctea -inrrough
mejallt contocksto n-doped rugíens.
SiO, layen is prcesen}to isolate the gate metallic parform
frrom The rcaqion betwean drran Ond courc

The primary durenca berween tne construCHmf


D-MoSFET and EMOSFET She ohcence Channel.

D. n h o channel

P-+ye Suhstnot
G Suhstoe

n
S

SiO
Worckin9
No =O
Vhe Some tve valkue

aA no Chonne

Soboth V and Vehove beer c at posH've Volge toaHN_

Ih OV.
holeg o
the
()posive potenhthial a gae tul) prrestuCR
electrroOr)s
en ten deopen regions p-Suubsthate. and

he P-Sutbsnahe win be atttracted o o positHve gahe


SiOSunfece
and aceoonulare in tHe regfon nean

As V incruaes in magnHude, the ononHratim fe


as SiO, Seuntaco incrrases unti) Ahs induceol y p e
qlon tan
Can 9upporc messtrahle low bet weon dtrain fo

CourcR
This level f Vos catlad
Vos hreshold volla(VT)
No draun ruron
When VGs V
Drau CururonF
VasVg
beyondHis
Vthe derciHy ffree
hs Vas incneaso n
Caroden in dumd channe wi incorease, Kexelting
The

an increaed leve of draiy urten

helps in diAting arurien fnonm 3 t D


(i) posthivie s
fows -fnom D to s
therca by
icfixed Vns u crreased
Vos
Nas
fxed

i.
.e gahe wil l e and less postHve w.ru nan.
The redoction in gae ho- drraun vollage

redtce Tthe adtrractve -fonc fon free Corsien


in the induced Chonne)

tha causes ruducthion ) effechive Chonme


wndth.
drain to gae
rzin

inally he Channel i l be ruduedto a pointE


Pinch-off and dration ondr-hon b e eMablishd,

rinch 4f beginning depleien ragio

P
VDs
Sahs.

Axed)
, fon V V O

Eayuann
9 K ( Vas-V) Vos V

K lon)

Chanacerri&ics

(i) Dran ChanacreiSriC3 Vog N at onsiant Vas


C ransfen Chanacterie

as
Thans-fen Canackoni ens.

fon P- Channe E-mOs FET


Cs -Ye

e -ve

-Ve
Drain chanacreriHCS Vns
Vnc
+ve

-Yo
Trancfen hanackeriica Vos =

+ve
(mA) 'n(mA)

10 N-8V

s 7V

- Vis +V

20

FIG. 6.39
Multisim
P'Splee kete ine the tninsterahutnuteristi s pr an n
hunelenhutmeement tve AMONE TI nm ihe dun hunt tenntie
(mA) p (mA)
8 - Vas=-6 V
D

5
- Vos=-5 Vv

G SS

2 Vas-4V

Vos-3V
+o -6 -5-4 -3-2 -1 0
D
VGs Vos V=-2V Vps
os

(a) (b) (c)


FIG. 6.411
p-Channel enhancement-type MOSFET with V =
2 Vand k =
0.5 x
10A/V

n-channel p-channel
9D 9D

- SS -o SS
G G

9D 9D

(a) (b)
FIG. 6.42
n-channel enhancement-type
Symbols for (a)
MOSFETs and (b) p-channel enhancement.
type MOSFETs.
Equations
JFET:
Vos
loas1 Vp
Ip =Ipsslvas=0 V» lp=0mAlVas=Vp D pss
4 Ves=Vp/2Vas0.3Vl

VesVe
Ipss
Pp VpsND
o
(1- Vas/V)
MOSFET (enhancement):

I k{VGsV7)
k =
D(on)
(VGs(on) Vr)

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