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    Bec 301 ST2 2023-24

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    Anonymous eWMnRr70q
    The document is a test paper for an electronics course. It contains questions about semiconductor physics, carrier transport, special purpose diodes, bipolar junction transistors, and MOS transistors. The test has multiple choice and long answer questions across several sections.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Bec 301 ST2 2023-24

    Uploaded by

    Anonymous eWMnRr70q
    88 views2 pages
    The document is a test paper for an electronics course. It contains questions about semiconductor physics, carrier transport, special purpose diodes, bipolar junction transistors, and MOS transistors. The test has multiple choice and long answer questions across several sections.

    Original Description:

    analog circuits Aktu 2023

    Original Title

    BEC 301 ST2 2023-24

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    The document is a test paper for an electronics course. It contains questions about semiconductor physics, carrier transport, special purpose diodes, bipolar junction transistors, and MOS transistors. The test has multiple choice and long answer questions across several sections.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    88 views2 pages

    Bec 301 ST2 2023-24

    Uploaded by

    Anonymous eWMnRr70q
    The document is a test paper for an electronics course. It contains questions about semiconductor physics, carrier transport, special purpose diodes, bipolar junction transistors, and MOS transistors. The test has multiple choice and long answer questions across several sections.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    ROLL NO.

    G.L. BAJAJ INSTITUTE OF TECHNOLOGY & MANAGEMENT


    GREATER NOIDA
    B. TECH (III-SEM) - (Electronics and Communication Engineering)
    SESSIONAL TEST-2 (ODD SEM 2023-24)
    ELECTRONIC DEVICES (BEC 301)
    Faculty Name: Dr. Dharmender Nishad / Mr. Mohit
    Time: 2:00 Hrs ` Max. Marks: 50
    Note: (i) No student will be allowed to leave the examination Room before end of exam.
    (ii) Diagram should be neat and clean.
    (iii) Mention Question number/section correctly.
    (iv) Be precise in your answer.
    (v) Do not write anything on question paper except Roll number.

    Course Outcomes:
    Following are the course outcomes of the subject: Electronic Devices
    CO Code Course Outcome(CO) Bloom's Level
    BEC301.1 Understand the principles of semiconductor Physics. L2- Understand
    BEC301.2 Understand the carrier transport in semiconductors. L2- Understand
    BEC301.3 Analyze and find application of special purpose diodes. L4- Analyze
    BEC301.4 Understand the working principle and design of Bipolar Junction Transistor. L3- Apply
    BEC301.5 Realize the mathematical models of MOS transistors L3- Apply
    Section: A
    1. Attempt all questions. (2*5= 10)
    Q.No. Questions Marks CO BL
    a) Define Contact Potential and how does it vary with the Biasing? 2 BEC301.2 L2

    b) Differentiate between elemental and compound semiconducting 2 BEC301.3 L2


    materials. Also comment on the materials used for LED.
    c) Plot the input and output characteristics of CE configuration. 2 BEC301.4 L2

    d) Draw the circuit diagram of Fixed biasing using BJT and calculate 2 BEC301.4 L3
    the operating point.
    e) Find the current gain β in CE configuration of BJT, if α = 0.98. 2 BEC301.4 L3

    Section: B

    2. Attempt any four of the following: (5*4 = 20)


    Q.No. Questions Marks CO BL
    Differentiate Zener and avalanche thermal breakdown mechanisms
    a) on the basis of doping, voltage, and required depletion region width 5 BEC301.3 L2
    and ionization effect..
    Explain the working of Solar cell. Discuss open circuit output
    voltage characteristic and short circuit current characteristic. Also BEC301.3 L3
    b) 5
    derive the Efficiency of solar cell.
    What is Photodiode? Discuss its construction, working principle,
    c) merits, demerits and applications. 5 BEC301.3 L2

    Construct and demonstrate the working mechanism of Common base


    5
    d) Configuration of BJT with its V-I Characteristics and amplification BEC301.4 L2
    factor.

    Sketch the circuit for BJT biasing using constant current source and
    e) 5 BEC301.4 L3
    show that output current Io = IRef
    Define α, β and γ of a transistor and derive the relationship
    f) between them. 5 BEC301.4 L3

    Section: C
    3. Attempt any one question (10 *1 = 10)
    Q. No. Questions Marks CO BL
    a) Derive the expression for diode current equation for a PN junction
    diode. Also plot its V-I Characteristics 10 BEC301.2 L3

    b) A Si p-n junction is having conductivity 0.7Ω–1cm–1 on the p side


    and 1.5 Ω–1cm–1 on the n-side. Calculate Built in potential V0, W,
    10 BEC301.2 L3
    Xpo (transition region width on p side) and Xno (transition region
    width on n side) at room temperature. Given μn = 3900cm2/ V-s , μp
    =1900 cm2/V-S , ni =2.4X1013 cm-3.єo =8.854 X10–14F/cm , єr=11.8

    4. Attempt any one question (10 *1 = 10)


    Q. No. Questions Marks CO BL
    a) Explain Bipolar junction Transistor using Ebers moll transistor model? 10 BEC301.4 L3

    b) Design a potential divider biasing circuit with the following


    specifications: Assume Si transistor with β =50, Vcc =22.5 V and Rc 10 BEC301.4 L3
    = 5.6 KΩ. It is desired to establish Q point at VCE =12V, Ic =1.5mA
    and S =3.

    Course Outcome Wise Marks Distribution


    0%
    L2
    26%
    70
    60
    50 41
    40
    30 22
    17
    20
    10 L3
    0 74%
    CO2 CO3 CO4
    Blooms Level Distribution
    Checked By
    (Head of Department)

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