A Wide-Band 20W LDMOS Doherty Power Amplifier
A Wide-Band 20W LDMOS Doherty Power Amplifier
A Wide-Band 20W LDMOS Doherty Power Amplifier
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Article in IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium · May 2010
DOI: 10.1109/MWSYM.2010.5515172
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J. H. Qureshi', N. Li', W.e. E. Neo2, F. van Rijs2, I. Blednov2 and L.e.N. de Vreede'
I
Dirnes, Delft University of Technology, Feldrnannweg 17, the Netherlands
2
NXP RF Power / Basestations, Gerstweg 2, Nijrnegen, the Netherlands
Abstract - This work discusses the efficiency bandwidth devices. Note that optimum wideband operation of the DPA
constrains in Doherty amplifiers. An analysis of the would require the transmission line TL to be a perfect
bandwidth limitations imposed by the impedance inverter impedance inverter over the whole desired frequency band.
and output capacitance of the active devices is given. Something that without changing the physical properties of
Alternative wideband matching and output connection the TL is not possible, since the electrical length of the TL
schemes for Doherty amplifiers are evaluated for their increases linearlY �i!p fre.flu.§n.fY..:.
_____
(Peaking
I. INTRODUCTION Device)
( J<�
with 1m and Ip representing the currents of the main and
peaking device respectively. Once the terminal voltages are 1
LlliJln _ (5)
known, the output power (Pout) and related effi ci en cy ( TJdpa) rm RC
of the total DPA as function of back-off power and However, this maximum bandwidth can only be only be
operating frequency, can be calculated as, achieved if the PA devices are matched using wideband
P 1C Re( V , . I;, )+ Re(Vou,.!p·)
o impedance matching techniques. This is traditionally done
TJdpa =�� (4) by matching the output of the PA as impedance. In such an
�c 4 i Vm(max) i I Im l+i Vp(max) iiIpi
approach first the reactive part is tuned out by a series
Note that class-B operation [4] is assumed in (4). The inductor, after which the remaining real part is matched by a
resulting efficiency curves are given in Fig. 2 for the multi-section wideband matching network (Fig. 3a) [7].
symmetrical two-way Doherty case [2]. r - - - - - - - - - - - - - - - - - I - - - - - - - - - - - - - - - - -I
r
I I I
I
• 1li • I
" Multi-section Matching Netwo k
I
Matching Network For Rea I Part
...... 's.;.. I
For real Part
.....�.�... �----------------- b;----------------
• 'n...
LIJ LI)
I
the maximum de sign frequency which can be selected for
Z in,,!
this particular DPA de sign technique with a g iven device
technology.
Once the length and the characteristic impedance of this
TL are known, then (9) can be used to refine the length and
characteristic impedance of the TL by including the effect
of the bond-wire inductances.
(�J
ZBias < (10)
transmission line is performed. For this purpose we first
7r es
neglect the bond-wire inductances in the initial analysis for 27rhesCdev tan
sake of simplicity. Doing so, (7) gives the electrical length
and characteristic impedance of the required connecting Moreover, also the connection of the peaking amplifier to
transmission line needed to absorb the output capacitance of the load is very important, since the impedance inversion
the PA devices in the quasi-lumped inverter. path of the main to peak amplifier should not be partially
Z shared by the DPA output connection to the external load.
8 c -'(WC Z) Z 0
T-
-
os dey , T0 . (8)
SIn
___
- _
( 7) For this reason in our design the peaking amplifier is
T directly bonded to the load along with bonding it directly to
Where, Zo is the cha ra ct erist ic impe dan ce of th e orig ina l full the quasi lumped TL (Fig. 5).
AJ4 impe dan ce in ve rte r, while BT and Zr are the calculated The remaining tasks in the circuit design of the DPA are the
electrical length an d ch aract erist ic impe dan ce of the TL, wideband output match to the 50 Ohm load, and the
wh ich forms th e in ve rter along -with the output ca pac itan ce s wideband input match of the PA devices [7]. In our design it
of the PA devices. Equation (7) also imposes a restriction has been chosen to have two individual inputs to the DPA to
on the maximum capacitance value which can be absorbed allow independent control of the phase relations of the main
in the quasi lumped transmission line, which for a particular and peak device in order to maximize its wideband
frequency is given by (8), performance.
I
0) < ---
(8)
ZoCdev
As discussed befo re, 'Z'o is normally equal to the optimum
load of the active devices for delivering maximum power.
The refo re, when assuming linear power sca ling, the pro du ct
of Zo an d Cdev is fixed for a particu la r te chno log y, an d
lQ Modul"t.o<'S
Fig. 5. Simplified block diagram of the 20-W NXP Gen 6 characterize the wideband DPA
0.2
0
OO----":;!;
'1�
� 80::- 9
' 00:!;:;:- --2
0 ---:: 'OO:----:::
:: 00""0 ---::27:: :::! 30·0
220::::00----,2
Frequency (MHz)
VI. MEASUREMENTS [3] Pelk J.M, et. al. , "A high efficiency 100-W GaN three-way
doherty amplifier for base-station applications", IEEE Trans.
Since the goal of this work is to evaluate the wideband
Microwave Theory & Tech. pp 1582-1591 Jully 2008
DPA performance set by the improved output power [4] S.C.Cripps, RF Power Amplifier Design for Wirelss
combining network, a mixed-signal characterization setup Communications, Archtech House, 1999
[8] was used to characterize the DPA demonstrator (Fig.7). [5] I. Blednov, Integrated Doherty type amplifier arrangement
It provides precise control of phase relations of the input with high power efficiency, Patent WO 2008/062371 A2
signals such that the output phases of the main and peak [6] R.M. Fano, "Theoretical Limitations on the Broad-Band
device track perfectly with the quasi-lumped impedance Matching of Arbitrary Impedances" , Journal of the Franklin
Institute, vol. 249, pp. 57-83
inverter. Also the input signal amplitudes have be optimized
[7] G.L. Matthaei, Microwave Filter, Matching Networks and
for maximum performance. The efficiency measurements Coupling Structures, McGraw-Hill Book Company
are performed from 1.7 GHz to 2.3 GHz, their results are [8] J.H. Qureshi, et. aI, "A 90-W power power GaN outphasing
shown in Fig. 9. The related gain of the DPA was 13-dB. amplifier with optimum input signal conditionting" ,IEEE
Trans.Microwave Theory & Tech. vol 57 no. 8 August 2009.