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    LGE2301

    Uploaded by

    Jarosław Skarbek

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    LGE2301

    Uploaded by

    Jarosław Skarbek
    23 views5 pages

    Copyright

    © © All Rights Reserved

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    PDF, TXT or read online from Scribd

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    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views5 pages

    LGE2301

    Uploaded by

    Jarosław Skarbek

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    2301

    P-Channel 20-V(D-S) Mosfet

    DESCRIPTION
    The 2301 uses advanced trench technology to provide D

    excellent RDS(ON), low gate charge and operation with gate


    voltages as low as 2.5V. This device is suitable for use as a G
    load switch or in PWM applications.

    S
    GENERAL FEATURES
    ● Schematic diagram

    VDSS RDS(ON) RDS(ON) ID


    @-4.5V(Typ) @-2.5V(Typ)

    -20V 64mΩ 89 mΩ -3 A

    ● High Power and current handing capability


    ● Lead free product is acquired Marking and pin Assignment
    ● Surface Mount Package

    Application
    ●PWM applications
    ●Load switch
    SOT-23
    ●Power management

    Absolute Maximum Ratings (TA=25℃unless otherwise noted)


    Parameter Symbol Limit Unit
    Drain-Source Voltage VDS -20 V
    Gate-Source Voltage VGS ±12 V
    Drain Current-Continuous ID -3 A
    Drain Current -Pulsed (Note 1) IDM -10 A
    Maximum Power Dissipation PD 1 W
    Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

    Thermal Characteristic
    Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 125 ℃/W

    Electrical Characteristics (TA=25℃unless otherwise noted)


    Parameter Symbol Condition Min Typ Max Unit
    Off Characteristics
    Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 -24 - V
    Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V - - -1 μA

    ht t p : // www.lgesem i .c o m
    Revision:20170701-P1 mail:lge@lgesemi.com
    2301
    P-Channel 20-V(D-S) Mosfet

    Gate-Body Leakage Current IGSS VGS=±12V,VDS=0V - - ±100 nA


    On Characteristics (Note 3)
    Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -0.4 -0.7 -1 V
    VGS=-4.5V, ID=-3A - 64 110 mΩ
    Drain-Source On-State Resistance RDS(ON)
    VGS=-2.5V, ID=-2A - 89 140 mΩ
    Forward Transconductance gFS VDS=-5V,ID=-2.8A - 9.5 - S
    Dynamic Characteristics (Note4)
    Input Capacitance Clss - 405 - PF
    VDS=-10V,VGS=0V,
    Output Capacitance Coss - 75 - PF
    F=1.0MHz
    Reverse Transfer Capacitance Crss - 55 - PF
    Switching Characteristics (Note 4)
    Turn-on Delay Time td(on) - 11 - nS
    Turn-on Rise Time tr VDD=-10V,ID=-1A - 35 - nS
    Turn-Off Delay Time td(off) VGS=-4.5V,RGEN=10Ω - 30 - nS
    Turn-Off Fall Time tf - 10 - nS
    Total Gate Charge Qg - 3.3 12 nC
    VDS=-10V,ID=-3A,
    Gate-Source Charge Qgs - 0.7 - nC
    VGS=-2.5V
    Gate-Drain Charge Qgd - 1.3 - nC
    Drain-Source Diode Characteristics
    Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.3A - - -1.2 V
    Diode Forward Current (Note 2) IS - - -1.3 A

    Notes:
    1. Repetitive Rating: Pulse width limited by maximum junction temperature.
    2. Surface Mounted on FR4 Board, t ≤ 10 sec.
    3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
    4. Guaranteed by design, not subject to production

    ht t p : // www.lgesem i .c o m
    Revision:20170701-P1 mail:lge@lgesemi.com
    2301
    P-Channel 20-V(D-S) Mosfet

    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


    ton toff
    tr tf
    td(on) td(off)

    90% 90%

    VOUT INVERTED
    10% 10%

    90%
    VIN 50% 50%

    10%
    PULSE WIDTH

    Figure 1:Switching Test Circuit Figure 2:Switching Waveforms

    ID- Drain Current (A）


    PD Power(W)

    TJ-Junction Temperature(℃) TJ-Junction Temperature(℃)


    Figure 3 Power Dissipation Figure 4 Drain Current
    Rdson On-Resistance(Ω)
    ID- Drain Current (A)

    Vds Drain-Source Voltage (V) ID- Drain Current (A)


    Figure 5 Output CHARACTERISTICS Figure 6 Drain-Source On-Resistance

    ht t p : // www.lgesem i .c o m
    Revision:20170701-P1 mail:lge@lgesemi.com
    2301
    P-Channel 20-V(D-S) Mosfet

    Normalized On-Resistance
    ID- Drain Current (A)

    Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃)


    Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance
    Rdson On-Resistance(Ω)

    C Capacitance (pF)

    Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V)


    Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds
    Is- Reverse Drain Current (A)
    Vgs Gate-Source Voltage (V)

    Qg Gate Charge (nC) Vsd Source-Drain Voltage (V)


    Figure 11 Gate Charge Figure 12 Source- Drain Diode Forward

    ht t p : // www.lgesem i .c o m
    Revision:20170701-P1 mail:lge@lgesemi.com
    2301
    P-Channel 20-V(D-S) Mosfet

    ID- Drain Current (A)

    Vds Drain-Source Voltage (V)


    Figure 13 Safe Operation Area
    Transient Thermal Impedance
    r(t),Normalized Effective

    Square Wave Pluse Duration(sec)


    Figure 14 Normalized Maximum Transient Thermal Impedance

    ht t p : // www.lgesem i .c o m
    Revision:20170701-P1 mail:lge@lgesemi.com

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