Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 13

By D. A. Neamen Exercise Solutions

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Chapter 13
Exercise Solutions
Ex 13.1 ea 2 N d
V pO =
N N  2 s
V bi = V t ln  a 2 d 
 n 
 i 
=
(1.6  10 )(0.40  10 ) (10 )
− 19 −4 2 16

(
 2  10 16 10 18  )( ) 2(11 .7 )(8 .85  10 )
−14

= (0.0259 ) ln   = 0.832 V
 1.5  10 10
2
(  ) = 1.236 V
 V  2 V bi  
V pO = V bi − V p = 0.832 − (− 2.50 ) 
I D1 (sat ) = I P1 1 − 3 bi  1 − 
V  3 V pO  
= 3.332 V   pO  
Now
  0 .8139 
 2  s V pO 
1/ 2
= (0 .23735 )1 − 3 
a=    1 .236 
 eN d   2 0.8139  

=
(
 2(11 .7 ) 8.85  10 (3.332 )  −14
) 1/ 2
 1 −
 3

1.236  

 (
1.6  10 −19
2  10 16 )( 
 ) = 0.02213 mA
−5
cm = 0 .464  m
= 4.64  10 Or
_______________________________________ I D1 (sat ) = 22 .13  A
_______________________________________
Ex 13.2
ea 2 N a Ex 13.4
V pO = From Ex 13.3, Vbi = 0.8139 V,
2 s
V pO = 1.236 V, I P1 = 0.23735 mA
=
(1.6  10 )(0.4  10 ) (10 )
− 19 −4 2 16

2 (11 .7 )(8 .85  10 ) −14

Then
3 I P1  V bi 
= 1.236 V g ms (max ) = 1 − 
(
 10 18 10 16 
V bi = (0.0259 ) ln 
)(
 = 0.8139 V
) V PO  V PO 

( 2
 1.5  10 10  ) 3(0 .23735 )  0 .8139 
= 1 − 
V p = V pO − V bi = 1.236 − 0.8139 = 0.422 V 1 .236  1 .236 

_______________________________________ g ms (max ) = 0.1086 mA/V

_______________________________________
Ex 13.3
 n (eN d )  Wa 3  Ex 13.5
2

I P1 =  
6 s ea 2 N d
 L  V pO =
2 s
(900 )(1.6  10 −19 )(10 16 )
2

=
6 (11 .7 )(8 .85  10 −14 ) =
(1.6  10 )(0.40  10 ) (5  10 )
− 19 −4 2 15

2 (13 .1)(8 .85  10 ) −14


(
 50  10 −4 0.40  10 −4 )( )
3

 = 0.5520 V
 5  10 − 4  N 
−4  n = V t ln  c 
= 2.37  10 A = 0.237 mA  Nd 
(
 10 18 10 16
V bi = (0.0259 ) ln 
)( )  = 0.8139  4 .7  10 17 
V = (0 .0259 ) ln   = 0 .1177 V
(
 1.5  10 10
2
)   5  10
15 

Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 13
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

Vbi =  Bn −  n = 0.85 − 0.1177 = 0.7323 V  L 

I D 1 (2 ) = I D1  
VT = V bi − V pO = 0.7323 − 0.5520  L − (1 2 ) L (2 ) 
= 0.180 V
 10 
_______________________________________ = (4.0 )  = 4.11709 mA
 9.7156 
Ex 13.6  L 
I D 1 (1) = I D1  
N   4 .7  10   L − (1 2 ) L (1) 
17
 n = V t ln  c  = (0 .0259 ) ln  16


 Nd   10   10 
= (4.0 )  = 4.10442 mA
= 0.0997 V  9.7456 
Vbi = 0.89 − 0.0997 = 0.790 V Now
V pO = V bi − VT = 0.790 − 0.25 = 0.540 V V DS (2 ) − V DS (1)
rds =
Then  I D 1 (2 ) −  I D 1 (1)

0.540 =
(
a 2 1.6  10 −19 10 16 )( ) 2 .5 − 2 .0
(
2(13 .1) 8.85  10 −14 ) =
4.11709 − 4.10442
= 39 .46 k 

 a = 0.280  m _______________________________________
_______________________________________
Ex 13.9
Ex 13.7 e n N d a 2
fT =
 n s W 2  s L2
kn =
(1.6  10 )(1000 )(5  10 )(0.50  10 )
2 aL −19 −4 2
(7000 )(13 .1)(8.85  10 )(25  10 )
15
−14 −4
=
=
(
2 0.40  10 − 4 0.8  10 − 4 )( ) 2 (11 .7 )(8.85  10 )(2  10 ) −14 −4 2

f T = 7 .69  10 9 Hz = 7.69 GHz

= 3.17  10 −3 A/V = 3.17 mA/V
2 2

I D1 (sat ) = k n (V GS − V T )2 _______________________________________
From exercise problem Ex 13.5,
VT = 0.180 V Test Your Understanding Solutions
Then
I D1 (sat ) = (3 .17 )(0 .50 − 0 .180 )
2
TYU 13.1
= 0.325 mA (
 5  10 18 5  10 15
V bi = (0.0259 ) ln 
)( )
_______________________________________
 1.8  10 6 (
2
) 
Ex 13.8 = 1.305 V
 2  s (V DS (2 ) − V DS (sat )) 
1/ 2 1/ 2

 2  s V bi  Na  
 L (2 ) = 
1
xn =    

 N  N + N  
  d 
eN d  e  d  a 
(
 2(11 .7 ) 8.85  10 −14 (2.5 ) 
=
) 1/ 2
(
 2 (13 .1) 8 .85  10 −14 (1 .305 )
=
)
 (
1.6  10 −19 10 16 )(

 )  1 .6  10 −19
−4
cm = 0 .5688  m
1/ 2
= 0.5688  10  5  10 18  1 

  
 5  10 18 + 5  10 15 
 2  s (V DS (1) − V DS (sat )) 
1/ 2
 5  10  
15

L (1) =  
 eN d  which yields
x n = 6 .147  10 −5 cm = 0 .6147  m
(
 2(11 .7 ) 8.85  10 −14 (2.0 ) 
=
) 1/ 2

 (
1.6  10 −19 10 16 )(

 ) We want
0.6147
a= = 0.512  m
= 0.5088  10 −4 cm = 0 .5088  m 1 .2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 13
By D. A. Neamen Exercise Solutions
______________________________________________________________________________________

So that TYU 13.3

ea 2 N d e p N a a 2
V pO = fT =
2 s 2  s L2

=
(1.6  10 )(0.5123  10 ) (5  10 )
− 19 −4 2 15
(1.6  10 )(400 )(2  10 )(0.50  10 )
−19 16 −4 2

2 (13 .1)(8 .85  10 )

=
2 (11 .7 )(8.85  10 )(4  10 )
−14
−14 −4 2

= 0.905 V
f T = 3 .07  10 9 Hz = 3.07 GHz
Then
V p = V bi − V pO = 1.305 − 0.905 _______________________________________
 V p  +0.40 V TYU 13.4
_______________________________________ e n N d a 2
fT =
2  s L2
TYU 13.2
 p (eN a )
2
 Wa 3 
=
(1.6  10 )(6500 )(3  10 )(0.50  10 )
−19 15 −4 2

I P1 = 
2 (13 .1)(8.85  10 )(10 )
 −14 −4 2
6 s  L 

=
(
 (400 ) 1.6  10
−19
2  10 16 )( ) 2
f T = 1 .07  10 11 Hz = 107 GHz


 (
6(11 .7 ) 8.85  10 −14 ) _______________________________________


(40  10 )(0.50  10 )
−4 −4 3 

−4 
5  10 

or I p1 = 6.593  10 −4 A = 0.6593 mA
Now
ea 2 N a
V pO =
2 s

=
(1.6  10 )(0.50  10 ) (2  10 )
− 19 −4 2 16

2 (11 .7 )(8 .85  10 ) −14

or V pO = 3.863 V
Also
(
 5  10 18 2  10 16
V bi = (0.0259 ) ln 
)( )
 1.5  10 10 (
2
) 
= 0.8736 V
Now
 V  2 V bi  

I D1 (sat ) = I P1 1 − 3 bi  1 − 
V  3 V pO  
  pO  
  0 .8736 
= (0 .6593 )1 − 3 
  3 .863 
  2  0.8736  
 1 −   
  3  3.863  

or I D1 (sat ) = 0.3538 mA
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