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    Tip 145

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    papoucrazy2

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    © All Rights Reserved
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    Tip 145

    Uploaded by

    papoucrazy2
    10 views2 pages

    Original Title

    tip145

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    Copyright:

    © All Rights Reserved
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    10 views2 pages

    Tip 145

    Uploaded by

    papoucrazy2

    Copyright:

    © All Rights Reserved
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    of 2

    isc Silicon PNP Darlington Power Transistor TIP145

    DESCRIPTION
    ·High DC Current Gain-
    : hFE = 1000(Min)@ IC= -5A
    ·Collector-Emitter Sustaining Voltage-
    : VCEO(SUS) = -60V(Min)
    ·Complement to Type TIP140
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    APPLICATIONS
    ·Designed for general purpose amplifier and low
    frequency switching applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage -60 V

    VCEO Collector-Emitter Voltage -60 V

    VEBO Emitter-Base Voltage -5 V

    IC Collector Current-Continuous -10 A

    ICM Collector Current-Peak -15 A

    IB Base Current- Continuous -0.5 A

    Collector Power Dissipation


    PC 125 W
    @TC=25℃

    Tj Junction Temperature 150 ℃

    Tstg Storage Temperature Range -65~150 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W

    Rth j-a Thermal Resistance,Junction to Ambient 35.7 ℃/W

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc Silicon PNP Darlington Power Transistor TIP145

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 -60 V

    VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA -2.0 V

    VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.0 V

    VBE(sat) Base-Emitter Saturation Voltage IC= -10A ,IB= -40mA -3.5 V

    V BE(on) Base-Emitter On Voltage IC= -10A ; VCE= -4V -3.0 V

    ICBO Collector Cutoff current VCB= -60V, IE= 0 -1 mA

    ICEO Collector Cutoff current VCE= -30V, IB= 0 -2 mA

    IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2 mA

    hFE-1 DC Current Gain IC= -5A ; VCE= -4V 1000

    hFE-2 DC Current Gain IC= -10A ; VCE= -4V 500

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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