EXPERIMENT 2: DIODE & TRANSISTOR

PART A: DIODE
OBJECTIVES

1. To investigate the basic characteristics of diode, zener diode and LED.

2. To apply silicon diode to various electronic circuits: clamping.

INSTRUMENTS & COMPONENTS

Instruments: oscilloscope, multimeter, DC power supply

Silicon Diodes (x1); Zener Diodes (x1); LED (yellow x 1 & red x 1)
Resistors: 330 Ω (x1), 10 kΩ (x1)
Capacitors: 1 μF (x1)

INTRODUCTION

Diode is a simple electronic element. Diode consists of two semiconductors that joint
together and there is a joint (or junction) between p-type semiconductor and n-type
semiconductor (see Figure 1 (a)). Diode functions as a valve by allowing current flows in
one direction but not in the reverse direction. The flow of current is controlled by the
voltage applied on the p-type semiconductor.

(a)
anode
Ano Kato
cathode
d d
(b)

Figure 1: (a) Semiconductor diode and (b) Diode symbol

The diode is said to be in forward bias if the p-section (known as anode) is applied with
positive voltage while the n-section (known as cathode). If the voltage is reversed then the
diode is said to be in reverse bias.

(a) (b)
Figure 2: (a) Forward bias: Current flows and (b) Reverse bias: No current

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In forward bias, current can flow through diode but almost no current can flow if the diode
is in reverse bias as shown in Figure 2. There is a saturated current, Io when the diode is in
reverse bias. The value is in the range of ~µA (or 10-6 A). For most application, the current
is generated in forward bias, whereas the current in reverse bias is assumed to be zero.

The plot of the diode current, I against the applied voltage, V (I-V) is shown in Figure 3.

I
(mA)

VR
Breakdown
voltage Voltage
VA VL
Plate voltage
I0
(μA)
Threshold voltage

Figure 3: I-V curve of diode.

The threshold voltage is the minimum voltage for current to start rising. The knee voltage
is the voltage obtained by extrapolating the tangent of the curve to the voltage axis. The
breakdown voltage is the reverse voltage applied on the diode until huge and uncontrollable
current flows through the diode. This can damage the diode.

PROCEDURE

Part 1 Silicon Diode Characteristics

(a) Construct a forward biased circuit as shown in Figure 4(a), using a DC power
supply. Measure the resistors R1. Adjust the VDC supply so that you obtain V1 as
given in Table 1 and measure V0. Calculate I  V0  V1  / R1 , and plot I against V1.

I
0 – 30
R1=330 
VDC D1
V0 V1

Figure 4(a)

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 TABLE 1

V1, V V0, V I , mA V1, V V0, V I , mA

0.60 0.72
0.64 0.74
0.68 0.76
0.70 0.77

Estimate the diode barrier potential VB  .................V

Estimate the diode bulk resistance RB = …………. 

(b) Connect a diode reversed biased circuit as shown in Figure 4(b). For V0 = 5, 10,
15, 20, 25, 30 V, measure V1 and I.

I
A

0 – 30 R1 = 330 
VDC D1
V0 V1

Figure 4(b)

Part 2 Zener Diode Characteristics

Build circuit according to Figure 4(b) by replacing the silicon diode with Zener diode. For
V0 = 5, 8, 11, 14, 17, 20 V, measure V1 and I. Plot I and V1.

TABLE 2

V0, V V1, V I,A V0, V V1, V I, A

5 14
8 17
11 20

Part 3 Light Emitting Diodes

Two LEDs are provided, one Yellow and

one Red. The short lead of the LED is the
cathode. Connect the Yellow LED to
replace diode according to Figure 4(a).

Record the voltage when the Yellow LED

lights up V1 = ………V and calculate the diode current I = …… mA. Repeat to light up
the Red LED, V1 = ………V, I = …… mA.

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Part 4 Diode Clamping Circuit

(a) Connect a clamping circuit as in Figure 5(a), using an AC power supply, C1 = 1 F,
RL = 10 kSet Signal generator, sine wave, 1 kHz and 10 Vpp. If you cannot get
10 Vpp, try other appropriate value such as 5 Vpp, 15 Vpp or 20 Vpp. Sketch the
waveforms of V0 and V1. Indicate the voltage scale on the waveforms. Describe
your observation and explain the operation.

C1
~ D1
V0 V1
RL

Figure 5(a)

(b) Repeat for the clamping circuit as shown in Figure 5(b). Sketch the waveforms with
appropriate voltage scale.

C1
~ D1
V0 V1
RL

Figure 5(b)

PART B: TRANSISTOR
OBJECTIVES

1. To determine the quiescent operating conditions of the voltage-divider bias BJT

configurations.
2. To measure AC and DC voltages in a common-emitter amplifier.

INSTRUMENTS & COMPONENTS

Instruments: Oscilloscope, Multimeter, Signal Function Generator, DC Power Supply

Resistors: 1 k (x1), 2.7 k (x1), 3 k (x1), 10 k (x1), 33 k (x1), 1 M (x1)
Capacitors: 15 µF (x2), 100 µF (x1)
Transistors: NPN (2N3904) Bipolar Junction Transistor (x1)

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INTRODUCTION

Figure 1

In common-emitter configuration, the emitter is common to both input and output terminals
as shown in Figure 1. In direct current (DC) mode the levels of IC and IB are related by a
quantity called gain and defined by beta:
𝐼𝐶
𝛽ⅆ𝑐 =
𝐼𝐵

For alternating current (AC) mode, the AC beta is defined as:

𝐼𝐶
𝛽𝑎𝑐 =
𝐼𝐵

On specification sheet βac is normally referred to as hFE. Although not exactly equal, the
levels of βac and βdc are usually reasonably close and are often used interchangeably.

PROCEDURE

Part 1 Determining β

(a) Construct the network of Figure 2 using the 2N3904 transistor. Use common
ground.

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 Figure 2

(b) Measure resistor RB and RC:

RB = ____________
RC = ____________

(c) Measure the voltages of VBE, VCC, VCE and VRC:

VBE = ___________
VCC = ___________
VCE = ___________
VRC = ___________

(d) Using the measured resistor values calculate the resulting base current using the
equation
V RB VCC  VBE
IB  
RB RB
and the collector current using the equation

𝑉𝐶𝐶 − 𝑉𝐶𝐸
𝐼𝐶 =
𝑅𝐶

Note: VRB should not be measured directly for determining IB because of the
loading effects of the meter across the high resistance RB.

(e) Using the results of 1(d), calculate the value of β

I
 C
IB

(f) Comment on your experiment.

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Part 2 Voltage Divider Configuration

(a) Construct the network of Figure 3 using the 2N3904 transistor. Use common
ground.

Figure 3

(b) Measure the resistor value for R1, R2, RC, RE

R1 = ____________
R2 = ____________
RC = ____________
RE = ____________
VCC =
VCE =
VBE=

(c) Measure VR1, VR2, VRC, and VRE.

(d) Based on the voltage readings of Part 2 (c), calculate VB, VC, and VE. Calculate the
currents IB, IE and IC from the voltage readings and the resistor values. Insert the
values in Table 1

(e) Using β determined in Part 1, calculate the theoretical levels of VB, VE, IE, IC, VC,
VBE and VCE. Insert the values in Table 1.

(f) Comment on your experiment.

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 Table 1
2N3904 VB (V) VE (V) VC (V) VCE (V) VBE IE IC IB
(V) (mA) (mA) (µA)
From
measurement
(2d)
From theory
(2e)
%Error

Part 3 Common-Emitter Transistor Amplifiers

(a) Construct the network of Figure 4 using the 2N3904 transistor. Note that Vin(pp) has
an internal resistor Rin. Use common ground.

Figure 4

(b) Using the value of IE obtained from Part 2 (d), calculate re using the equation
0.025(V)
𝑟𝑒 =
𝐼𝐸 (A)

(c) Using the value of IE obtained from Part 2 (e), calculate re

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(d) Compare and comment on the results of Part 3 (b) and (c).

(e) Apply a peak-to-peak AC input signal, Vin(pp) of 20 – 100 mV (make sure it is in

mV range) at f = 1 kHz. Observe with oscilloscope and sketch the input waveform
(Vin) and the output waveform (Vout). You may need to share signal generator that
could provide a signal in mV range.

(f) Calculate the amplifier voltage gain for a fully bypassed emitter using the equation
𝑅𝐶
𝐴𝑉_𝑚𝑎𝑥 =
𝑟𝑒

𝑅𝐶
𝐴𝑉_𝑚𝑖𝑛 =
𝑟𝑒 + 𝑅𝐸

(g) Calculate the circuit no-load voltage gain using the values measured from the
oscilloscope
𝑉𝑜𝑢𝑡
𝐴𝑉 =
𝑉𝑖𝑛

(h) Compare and comment on the measured values of Av (Part 3 (g)) with that
calculated in Part 3 (f).

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