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EC1206 ELECTRONIC DEVICES LPTC 3003

OBJECTIVES
• To acquaint the students with the construction, theory and operation of the basic electronic
devices such as PN junction diode, Bipolar and Field-effect Transistors, Power control devices,
LED, LCD and other Opto-electronic devices.
UNIT I SEMICONDUCTOR DIODE 9
PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities,
forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching
Characteristics, Breakdown in PN Junction Diodes.
UNIT II BIPOLAR JUNCTION TRANSISTORS 9
NPN -PNP -Operations-Early effect-Current equations – Input and Output characteristics of CE,
CB, CC - Hybrid -π model - h-parameter model, Ebers Moll Model- Gummel Poon-model,
MultiEmitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS 9
JFETs – Drain and Transfer characteristics,-Current equations-Pinch off voltage and its
significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation,
DMOSFET, E-MOSFET- Characteristics – Comparison of MOSFET with JFET.
UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET,
Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device,
LASER diode, LDR.
UNIT V POWER DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD,
Phototransistor, Opto Coupler, Solar cell, CCD.
TOTAL : 45 PERIODS
TEXT BOOKS
1. Donald A Neaman, “Semiconductor Physics and Devices”, Fourth Edition, Tata Mc
GrawHillInc. 2012. 30
2. Salivahanan. S, Suresh Kumar. N, Vallavaraj. A, “Electronic Devices and circuits”, Third
Edition, Tata McGraw- Hill, 2008.
REFERENCE BOOKS
1. Robert Boylestad and Louis Nashelsky, “Electron Devices and Circuit Theory” Pearson Prentice
Hall, 10th edition, July 2008.
2. R.S.Sedha, “ A Text Book of Applied Electronics” S.Chand Publications, 2006. 3. 3. Yang,
“Fundamentals of Semiconductor Devices”, McGraw Hill International Edition, 1978.
COURSE OUTCOMES
Upon completion of the course, students will be able to
CO1 To analyze the operation and characteristics of the PN junction diode.
CO2 To analyze the operation and characteristics of Bipolar junction transistor (BJT).
CO3 To understand and analyze the Field-effect transistor – JFET, MOSFET.
CO4 To study and analyze the special semiconductor devices like MESFET, FINFET, PINFET,
CNTFET, Varactor diode, Tunnel Diode, GaAs Devices, LASER, and LDR Diode.
CO5 To understand the basic concepts of Power and Display devices

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