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    Sheet 1

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    roginageorge054

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    Sheet 1

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    Sheet 1

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    Faculty of Engineering

    Electronics and communications Department


    Electronics Devices (ELE 222) Sheet (1)

    1. The atomic number of silicon is


    A. 8
    B. 14
    C. 4

    2. The atomic number of germanium is


    A. 32
    B. 4
    C. 8

    3. The most widely used semi-conductive material in electronic device is


    A. silicon
    B. carbon
    C. germanium
    D. copper

    4. The energy band in which free electrons exist is the


    A. first band
    B. conduction band
    C. second band
    D. valence band

    5. Electron-holes pairs are produced by


    A. ionization
    B. thermal energy
    C. recombination
    D. doping

    6. Recombination is when.
    A. a crystal is formed.
    B. a positive and a negative ion bond together
    C. an electron falls into a hole.
    D. a valence electron becomes a conduction electron

    7. Each atom in a silicon crystal has


    A. no valence electrons because all are shared with other atoms.
    B. eight valence electrons because all are with other atoms.
    C. four valence electrons
    D. four conduction electrons
    1
    8. The current in a semiconductor is produced by
    A. holes only
    B. electrons only
    C. both electrons and holes
    D. negative ions

    9. In an intrinsic semiconductor
    A. there are no free electrons.
    B. the free electrons are thermally produced.
    C. there are only holes.
    D. there are as many electrons as there are holes
    E. answer b and d

    10. A pure semiconductor behaves like an insulator at 00 K because


    A. There is no recombination of electrons with holes
    B. Drift velocity of free electrons is very small
    C. Free electrons are not available for current conduction
    D. Energy possessed by electrons at that low temperature is almost zero

    11. In semiconductor the forbidden energy gap lies


    A. Just below the conduction band
    B. Just above the conduction band
    C. Either above or below the conduction band
    D. Between the valence band and conduction band

    12. A semiconductor is formed by ……… bonds.


    A. Covalent
    B.Electrovalent
    C. Co-ordinate
    D. None of the above

    13. The process of adding an impurity to an intrinsic semiconductor is called.


    A. atomic modification
    B. doping
    C. recombination
    D. ionization

    14. A trivalent impurity is added to silicon to create


    A. germanium
    B. an n-type semiconductor
    C. a depletion region
    D. a p-type semiconductor

    15. The purpose of a pentavalent impurity is to


    A. increase the number of free electrons
    B. create minority carriers
    C. reduce the conductivity of silicon
    D. increase the number of holes
    2
    16. Holes in an n-type semiconductor are
    A. minority carriers that are thermally produced
    B. majority carriers that are thermally produced
    C. minority carriers that are produced by doping
    D. majority carriers that are produced by doping

    17. Consider an n-type silicon for which the dopant concentration, ND = 1018/cm3. Find the electron
    and hole concentrations at T = 300 K and 400 K.

    18. For a silicon crystal doped with boron, what must NA be if at T = 300 K the electron concentration
    drops below the intrinsic level by a factor of 106?

    19. Find the resistivity of (a) intrinsic silicon and (b) p-type silicon with NA = 1016/cm3. Use, ni =
    1.5e10 /cm3 and assume that for intrinsic silicon µn = 1350 cm2/v.s and µp = 450 cm2/v.s, and for the
    doped silicon µn = 1110 cm2/v.s and µp = 400 cm2/v.s.

    20. The linear electron-concentration profile shown in Fig. Q20, has been established in a piece of
    silicon. If no = 1017 /cm3 and W = 1 μm, find the electron-current density in micro amperes per
    micron squared (μA/μm2). If a diffusion current of 1 mA is required what must the cross-sectional
    area (in a direction perpendicular to the page) be?

    Figure Q20

    Final Ans: 56 μA/μm2; 18 μm2

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