SARS05

High Efficiency Snubber Diode

Features and Benefits Description

▪ High Peak Reverse Voltage, VRM : 800 V The SARS05 is an 800 V silicon diode designed especially for
▪ Low Forward Voltage, VF : 1.05 V (max.) at IF = 1.0 A use in high-efficiency snubber circuits. This diode can sustain
▪ Peak Forward Surge Current, IFSM : 30 A a high voltage with low loss, with low-noise rectification.
▪ Average Forward Current, IF(AV) : 1.0 A
▪ Flammability rating UL94V-0 (Equivalent)
▪ Pins Pb (lead) free

Package: Surface Mount Applications

▪ White goods appliances
▪ Audio-visual equipment
▪ Light fixtures
▪ Communication equipment
▪ Factory automation

Not to scale

Product Structure

Epoxy resin body

Silicon chip

Solder-plated copper leadframe

SARS05-DS September 2, 2009

SANKEN ELECTRIC CO., LTD.
http://www.sanken-ele.co.jp/en/
SARS05 High Efficiency Snubber Diode

Selection Guide
Part Number Packing*
SARS05VL 1800 pieces per reel, embossed taping; cathode left
SARS05VR 1800 pieces per reel, embossed taping; cathode right
*See the Packing Options page for details on the packing orientation.

Absolute Maximum Ratings

Characteristic Symbol Conditions Rating Unit
Peak Reverse Surge Voltage VRSM 800 V
Peak Reverse Voltage VRM 800 V
Average Forward Current IF(AV) Refer to figure 1 1.0 A
Peak Forward Surge Current IFSM 10 ms, half sine wave, one shot 30 A
I2t Limiting Value I 2t 1 ms < t < 10 ms 4.5 A2 ⋅ s
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 150 °C

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Electrical Characteristics valid at TA = 25°C, unless otherwise specified

Characteristic Symbol Test Conditions Value Unit
Forward Voltage VF IF = 1.0 A 1.05 (max) V
Reverse Current IR VR = VRM 5 (max) μA
Reverse Current (High Temperature) IR(H) VR = VRM , Tj = 100°C 50 (max) μA
IF = IRP = 100 mA, 95% recovery point, Tj = 25°C,
Reverse Recovery Time trr 2 to 19 (max) μs
see figure 2
Thermal Resistance, Junction to Lead RθJL Between junction and pin 20 (max) °C/W

Forward Current Derating versus Pin Temperature Forward Current Derating versus Pin Temperature
Tj = 150°C, VR = 0 V Tj = 150°C, VR = 800 V
1.0 1.0
Average Forward Current, IF(AV) (A)

Average Forward Current, IF(AV) (A)

0.8 t / T = 1/6 0.8 t / T = 1/6 Sine wave

DC DC
t / T = 1/3, Sine wave t / T = 1/3
0.6 0.6
t / T = 1/2 t / T = 1/2

0.4 0.4

0.2 t 0.2 t
T T

0 0
100 110 120 130 140 150 100 110 120 130 140 150
Pin Temperature, TL (°C) Pin Temperature, TL (°C)

Figure 1. Derating Characteristics and Mounting Conditions

IF = IRP = 10 to 100 mA
100 μF
0.1 IRP
100 mA 100 mA
IF
10 Ω

20 μs
IRP

200 μs
Figure 2. Definition of Peak Reverse Current, IRP trr

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SARS05 High Efficiency Snubber Diode

Characteristic Performance

Forward Power Dissipation versus Average Forward Current

Tj = 150°C
1.4
Forward Power Dissipation, PF (W)

1.2
t / T = 1/6

1.0
t / T = 1/3, Sine wave

0.8
t / T = 1/2
DC
0.6

0.4
t
0.2
T

0
0 0.2 0.4 0.6 0.8 1.0
Average Forward Current, IF(AV) (A)

Reverse Power Dissipation versus Reverse Voltage

Tj = 150°C
0.40
Reverse Power Dissipation, PR (W)

0.35

0.30
t / T = 1/6
0.25
t / T = 1/3, Sine wave
0.20
t / T = 1/2
0.15 t
T
0.10
DC
0.05

0
0 100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)

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SARS05 High Efficiency Snubber Diode

Package Outline 4.5 ±0.2

2.6 ±0.2

Cathode Index Band

1 2
+0.1
2.15 –0.2

0.05 –0.05
+0.1
2X1.3 ±0.4 2.0 MIN 2X1.5 ±0.2

5.0 +0.4
–0.1 Dimensions in mm

Package Marking

AS05 Product Number

Abbreviation of SARS05
YMDD Lot Number
Y is the last digit of the year (0 to 9)
Cathode Index Band M is the month (1 to 9, O, N, D)
DD is the day (01 to 31)

Material Composition and Internal Structure

1
2 4
1. Body: Plastic, epoxy resin

2. Chip: Si

3. Leadframe: Cu with solder plating

4. Interior Leadframe: Cu

3 3 Weight: Approximately 0.072 g

Pin treatment Pb-free. Device composition

compliant with the RoHS directive.

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SARS05 High Efficiency Snubber Diode

Packing Options

Embossed Tape Feeding Direction

0.1
1.5 +0.1
–0 4 0.1

1.75
0.05
2
0.05

1
12 –0.1
5.5

0.1
VL orientation

YMDD
AS05

5.6
2
4 0.1
0.1
0.1
2.4 Dimensions in mm
2.9
Tape and reel dimensions
the same for both orientations
Feeding Direction

2
VR orientation
YMDD
AS05

Reel

2.0 0.5
13 0.5 1800 pieces per reel
60 2

(1) Device is placed in the embossed pocket with the mounting electrode down.
R1.0 (2) 150 to 200 mm leader tape is attached to the tip of the tape.
21 0.8 (3) 10 or more blank pockets are provided at both the beginning and
the end of the tape.

+0
180 –3 13 1.5 1.2 0.5

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SARS05 High Efficiency Snubber Diode

Reliability Tests
Acceptance
Test Name Test Conditions Rating Unit
Criterion
Thermal Fatigue Test ∆Tj = 100°C 1 5000 cycle
TA = 150°C, VR = VRM (AC, half-sine wave),
High Temperature Reverse Bias Test 1 1000 hour
with external heatsink
Humidity Reverse Bias Test TA = 85°C, RH = 85%,VR = VRM × 0.8 (DC) 1 500 hour
High Temperature Storage Test TA = 150°C 1 1000 hour
Moisture Resistance Test TA = 85°C, RH = 85% 1 1000 hour
Ice water (5 minutes), then room temperature
Thermal Shock Test 1 100 cycle
water (20 seconds), then boiling water (5 minutes)
Temperature Cycle Test –40°C (30 minutes), then 150°C (30 minutes) 1 100 cycle
Pressure Cooker Test 2.03 ×105 Pa, 100% RH, unsaturated equipment 1 96 hour
260 ±5°C, full solder dip 1 10 second
Resistance to Soldering Heat Test
380 ±5°C, using soldering iron 1 3.5 second
Solderability Test 245 ±5°C, 5 ±0.5 seconds, using rosin flux 2 95 %
Drop Test Free-fall drop from 1 m height onto maple plate 3 10 cycle

NOTE: Acceptance criteria as follows:

1 – Product meets all the values specified in the Electrical Characteristics table, after being exposed to normal temperature more than 2 hours and
less than 24 hours.
2 – Product meets rating of the reliability test.
3 – No structural failures during reliability test, and product meets VF and IR specifications in the Electrical Characteristics table after completion of the
reliability test.

Design Notes
Use resistors in series, and adjust so the diode saturates at junction temperature, Tj ≤ 150°C.

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SARS05 High Efficiency Snubber Diode

• The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the
latest revision of the document before use.
• Application and operation examples described in this document are quoted for the sole purpose of reference for the use of the prod-
ucts herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or
any other rights of Sanken or any third party which may result from its use.
• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semicon-
ductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures
including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device
failure or malfunction.
• Sanken products listed in this document are designed and intended for the use as components in general purpose electronic equip-
ment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.).
When considering the use of Sanken products in the applications where higher reliability is required (transportation equipment and
its control systems, traffic signal control systems or equipment, fire/crime alarm systems, various safety devices, etc.), and whenever
long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest Sanken sales
representative to discuss, prior to the use of the products herein.
The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required
(aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited.
• In the case that you use Sanken products or design your products by using Sanken products, the reliability largely depends on the
degree of derating to be made to the rated values. Derating may be interpreted as a case that an operation range is set by derating the
load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. In general,
derating factors include electric stresses such as electric voltage, electric current, electric power etc., environmental stresses such
as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. For these stresses,
instantaneous values, maximum values and minimum values must be taken into consideration.
In addition, it should be noted that since power devices or IC's including power devices have large self-heating value, the degree of
derating of junction temperature affects the reliability significantly.
• When using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically
or otherwise processing or treating the products, please duly consider all possible risks that may result from all such uses in advance
and proceed therewith at your own responsibility.
• Anti radioactive ray design is not considered for the products listed herein.
• Sanken assumes no responsibility for any troubles, such as dropping products caused during transportation out of Sanken's distribu-
tion network.
• The contents in this document must not be transcribed or copied without Sanken's written consent.

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SANKEN ELECTRIC CO., LTD. September 2, 2009