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Lab report 5

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23 views

Lab report 5

Uploaded by

abir61300
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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AMERICAN INTERNATIONAL UNIVERSITY–BANGLADESH (AIUB)

FACULTY OF

SCIENCE & TECHNOLOGY

ELECTRONIC DEVICES LAB


Fall – 2023-24 || Section: F

LAB REPORT ON

Study of Diode Rectifiers

Supervised By
PROTIK PARVEZ SHEIKH

Submitted By Group -6

Name ID

Mahib Saad Riham 23-50376-1

Rafsan Zaman Abir 23-50392-1

MD. Sadi Mamud 23-50372-1


Title of the Experiment: Study of Transistor Characteristics in Common Emitter Amplifier.

Objectives:
The objectives of this experiment are to
1. Become familiar with bipolar junction transistors (BJTs)
2. Study the biasing of a Common Emitter (CE) amplifier, and
3. Draw the input and output characteristics of a common emitter BJT circuit.

Apparatus:

No Apparatus Quantity
1 BJT (2N2222, C828) 1
2 Resistance (1 k 10 k 0 k) 1 each
3 Project Board 1
4 DC milliammeter (0-50 mA) 1
5 DC microammeter (0-500 A) 1
6 Multimeter 1
7 Connecting Leads 10

Experimental Procedures:
1. The terminals of the transistor were identified.
2. The circuit connections were made as shown in the above figure.
3. For input characteristics, the voltage VCE was fixed first, the voltage VBB was varied, and the Base
current IB was calculated.
4. For output characteristics, the input circuit was opened at first (i. e. to make IB = 0). The collector
voltage VCC varied in steps of 4V and the Collector current IC were calculated.
5. Now, the input circuit was closed, and the base current IB was fixed at 50μA by varying VBB. The
voltage VCC was varied according to the table, and IC was calculated in each step. The process was
repeated for other values of IB.
Experimental Setup:

Figure 5: Circuit diagram for the determination of CE transistor characteristics


Experimental Result:

Table 1 Data for the input characteristic, IB -VBE Curve


Collector Supply Voltage, VCC = +10 V Collector Supply Voltage, VCC = +16 V
Source Base-to- Base Resistor Base Current, Base-to-Emitter Base Resistor Base Current,
Voltage, Emitter Voltage, VB IB (A) Voltage, VBE Voltage, VB (V) IB (A)
VBB (V) Voltage, (V) (V)
VBE (V)
0 0 0 0 0.009 0 0.9
0.2 0.318 0 11.8 0.273 0 7.3
0.4 0.510 0.001 11 0.479 0.001 7.9
0.6 0.649 0.002 4.9 0.626 0.047 2.6
0.8 0.673 0.198 12.7 0.662 0.206 13.8
1.0 0.698 0.414 30.2 0.697 0.439 30.3
1.5 0.707 0.860 79.3 0.724 0.862 77.6
2.0 0.711 1.359 128.9 0.728 1.365 127.2
2.5 0.713 1.853 178.7 0.730 1.842 177
3.0 0.715 2.312 228.5 0.732 2.295 226.8
Table 2 data for the input characteristics, IC -VCE Curve

Base Current, IB = 0 A Base Current, IB = 50 A Base Current, IB = 100 A

Collectorto- Collector Collectorto- Collector Collectorto- Collector


Source Collector Collector Collector
Emitter Resistor Emitter Resistor Emitter Resistor
Voltage, Current, Current, Current,
Voltage, Voltage, VC Voltage, Voltage, VC Voltage, Voltage, VC
VCC (V) IC (mA) IC (mA) IC (mA)
VCE (V) (V) VCE (V) (V) VCE (V) (V)
0 0 0 0 0 0 0 0 0 0
2 2.064 0 0.064 0.07 1.90 1.93 0.04 0.01 1.95
4 4.100 0 0.1 0.15 3.89 3.85 0.08 0.11 3.92
6 6.080 0 0.08 0.129 5.76 5.87 0.09 0.24 5.91
8 8.010 0 0.01 0.160 7.85 7.84 0.101 0.35 7.89
10 10.02 0 0.02 0.215 9.75 9.78 0.122 0.55 9.9
12 12.01 0 0.01 0.458 11.60 11.54 0.135 0.84 11.85
Simulation:

Table 1 Input characteristics:


Table 2 Output characteristics:
Questions:
3. What are the marked differences between a BJT and FET?
BJT: - Bipolar device (uses both electrons and holes).
- Current-controlled device.
- Higher transconductance.
- Suitable for analog amplification.
FET: - Unipolar device (uses either electrons or holes).
- Voltage-controlled device.
- Higher input impedance.
- Better for digital applications.
4. What is the Q-point? Discuss its significance.
Q-point: - The operating point of the transistor when no input signal is applied.
Significance: It determines the transistor's response to the input signal. Correct Q-point ensures the transistor
operates in the desired region (active) and avoids distortion.

6. Give your suggestions regarding this experiment.


a. Ensure precise measurement of resistor values.
b. Verify all connections before applying power to avoid component damage.
c. Use heat sinks or cooling methods to maintain the thermal stability of the transistor.
7. Discuss the overall aspects of the experiment. Did your results match the expected ones? If not,
explain.
Results and Expectations: Matching Results: If the experimental results align with simulations, it indicates a
correct setup and understanding of BJT behavior.
Discrepancies: If results differ, investigate possible sources of error such as inaccurate component values,
measurement errors, or unexpected parasitic effects. By conducting this experiment, students gain a deeper
understanding of BJT operation, biasing, and characteristic curves. This foundational knowledge is crucial for
designing and analyzing transistor-based circuits.

Discussion and
Conclusion:
The study examines the behavior and operation of Bipolar Junction Transistors (BJTs) in a CE amplifier
configuration. It examines the relationship between IB and VBE, identifying the base-emitter junction as a
forward-biased diode. The input dynamic resistance is calculated from the ratio of small VBE changes to
small IB changes. The knee voltage where the input characteristic curve rises sharply is determined. The
relationship between IC and VCE is explored for output characteristics, with IB kept constant. The output
dynamic resistance is derived from the ratio of VCE changes to IC changes. Proper biasing is emphasized as
essential for the transistor's function in active, saturation, and cut-off modes. The transistor's operation as an
amplifier in active mode is described, with the emitter junction forward-biased and the collector junction
reverse-biased. In saturation mode, the transistor operates as a closed switch, with both junctions forward
biased. In cut-off mode, both junctions reverse-biased, turning the transistor off. The experiment successfully
demonstrated the key characteristics and behavior of BJTs in a common emitter configuration.

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