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EDC Tutorials R20

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venkatakrishnarao092
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18 views

EDC Tutorials R20

Uploaded by

venkatakrishnarao092
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Electronic Devices & Circuits

Tutorial Questions
Unit-1: Junction Diode Characteristics & Special Semiconductor Devices

1. a) Explain the phenomena of Hall Effect in semiconductors with neat sketches.


b) Prove that the conductivity of a semiconductor is given by σ= q (p µp + n µn).
2. a) Draw the V-I Characteristics of diode and explain?
b) Explain and derive the capacitances of PN junction diode in forward bias and reverse
bias .
3. a) Describe the PN junction in forward and reverse bias operation with the help of energy
band diagrams.
b) Derive the expression for static and dynamic resistances of a diode.
4. a) Derive the expression for barrier potential of a PN junction diode.
b) Obtain the expression for the current in a PN junction diode.
5. a) Discuss about the different diode circuit models.
b) Explain the operation of tunnel diode with band diagrams.
6. a) Explain the V-I Characteristic of Zener diode and explain its operation.
b) Explain Avalanche breakdown and Zener break down mechanisms.
7. a) Explain the operation of SCR & its characteristics.
b) Explain the construction and working of photodiode?

Unit-2: Diode Applications

1. a) Explain working principle of full wave bridge rectifier with a neat diagram.
b) List the types of filters used in rectification & compare various filter circuits in terms
of ripple factors.
2. a) Draw the circuit of a half wave rectifier and explain its working with input and output
waveform
b) A Full wave rectifier circuit is fed from a transformer having a center tapped
secondary winding. The rms voltage from either end of secondary to center tap is 30 V, if
diode forward resistance is 2 ohm and half secondary resistance is 8 Ώ for a load of 1 K
Ώ, Calculate,
i).Power delivered to load ii).% regulation iii). Efficiency iv).Ripple factor
3. a) Derive an expression for ripple factor for a full-wave rectifier with capacitor filter.
b) Explain L-section and pi -section filter with diagrams.
4. a) Explain bridge rectifier with neat diagram and draw the input and output waveforms.
b) A diode whose internal resistance is 20ohms is to supply power to a load of 1 K Ώ
from 110 V (rms) source of supply. Calculate a). Peak load current b). DC load current
c). AC load current d). DC diode voltage e). Total input power f) Peak inverse voltage g)
% of regulation h). Efficiency
5. a) Derive the expression for ripple factor of Half wave rectifier
b) Derive the expression for efficiency of full-wave bridge rectifier
6. Explain the working of center-tapped full wave rectifier. Derive expressions for V DC, IDC,
Vrms and Irms for it?
7. a) Explain how the Zener diode acts as a voltage regulator.
b) Define load regulation and line regulation with appropriate formulas.

UNIT-3: BJT, FET, MOSFET and UJT

1. a) Explain the input and output characteristics of a transistor in common emitter


configurations?
b) Explain the various current components in an NPN bipolar junction transistor.
2. a) Draw the input and output characteristics of a transistor in common base
configurations?
b) Derive the relation among α, β and γ?
3. a) Explain the constructional details of Bipolar Junction Transistor?
b) For a silicon, α=0.995 emitter current is 10mA & leakage current I C0=0.5μA. Find
IC ,IB β, and ICEO
4. a) Explain the operation of UJT?
b) Explain the input and output characteristics of a transistor in common collector.
5. With the help of neat sketches and characteristic curves explain the construction &
operation of a JFET and mark the regions of operation on the characteristics?
6. a) Bring out the differences between BJT and FET.
b) Bring out the differences between JFET and MOSFET?
7. a) Explain the n-channel enhancement mode mosfet operation.
b) Explain the n-channel Depletion mode mosfet operation.

UNIT-4: Transistor Biasing


1. a) Explain the working of collector – Base bias circuit using NPN transistor.
Derive the equation for IB
b) For the circuit shown in Figure 1, I C =2mA, β=100 & VCE=3V. Calculate
R1& RC. Assume VBE=0.6v.

2. a) Define stability factor and discuss the factors that cause instability of
biasing circuit
b) Determine the operating point for a silicon transistor biased by fixed
bias method with β =100, RB=500 K Ώ, Rc=2.5 K Ώ and Vcc=20 V and
draw DC load line.
3. a) For the circuit shown below, determine IB, IC, IE, VCE and stability factor S.
b) Write a short note on different biasing techniques for JFET.
4. a) Determine the level of I and V for voltage divider configuration using
CQ CEQ

exact and approximate techniques Vcc=18 v, R1=82 K Ώ, R2=22K Ώ ,


Rc=5.6K Ώ, RE=1.2K Ώ , β=50 b) With the help of neat diagram explain
the voltage divider biasing method for FET.
5. a) List the advantage and disadvantages of fixed bias method.
b) What is the need for biasing and writes the condition for biasing a
transistor to work as amplifier
c) Derive the stability factor for S and S’ for fixed bias circuit.
d) Explain any one bias compensation method
e) What are the effects on the output signal if the operating point is not
properly chosen?
6. a) What is meant by stabilization? Define the different stability factors.
b) Explain the criteria for fixing operating point
7. a) Explain the biasing techniques of a MOSFETs.
b) List the advantages and disadvantages of MOSFET biasing techniques.

UNIT-5: Small Signal Low frequency analysis of BJT and FET amplifiers

1. a) Draw the approximate hybrid equivalent circuits of CE,CB and CC


configurations.
b) Draw the h-parameters equivalent circuit for a common emitter
amplifier and derive the expression for Ai ,RI, Av

2. a) Explain the analysis of transistor amplifier circuit using h-parameter.


Derive the equation for input impedance, voltage gain and output
impedance
b) The amplifier utilizes n-channel FET using source self bias circuit for
which Vp=-2V, IDSS=1.65 mA. It is desired to bias the circuit at I D=0.8 mA,
Av=20 dB using VDD=4V. Assume rd >> RD, find i) VGs ii) gm iii) R s iv) RD

3. a) Determine the h-parameters for common emitter configuration from


the characteristic curves
b) Derive the expressions for Z i, Zo and Av for common drain J-FET
amplifier
4. a) Determine and define the h-parameters using a two port network
model
b) For common source amplifier VGSQ=-2V, IDSS=8mA, Vp=-8V, Yos=20μs,
RG=1MΏ, RD=5.1KΏ, calculate gm, rd, Zi, Zo and Av
5. a)Draw the circuit diagram of CE amplifier with emitter resistance and
obtain its equivalent hybrid model and derive expressions for A i,Av, Ri, and
Ro .use approximate analysis.
b) Draw the low frequency model of JFET amplifier in common drain
configuration and derive the expressions for input impedance, output
impedance and voltage gain
6.a) Explain the analysis of CB transistor amplifier circuit using r π-
parameter. Derive the equation for input impedance, voltage gain and
output impedance
b) Draw the low frequency model of JFET amplifier in common source
configuration and derive the expressions for input impedance, output
impedance and voltage gain
7. Explain the analysis of CB transistor amplifier circuit using r π-parameter.
Derive the equation for input impedance, voltage gain and output
impedance

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