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Semiconductor Fundamentals and Concepts

Lecture 1 covers the fundamentals of semiconductor devices, including concepts like electrons and holes, energy-band models, and doping. Students will learn about the operation of pn-junction diodes, MOS capacitors, and field-effect transistors, with a focus on how physical parameters affect their characteristics. The grading policy includes homework, a midterm, and a final exam, while recommended readings are provided for deeper understanding.

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張勝博
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117 views20 pages

Semiconductor Fundamentals and Concepts

Lecture 1 covers the fundamentals of semiconductor devices, including concepts like electrons and holes, energy-band models, and doping. Students will learn about the operation of pn-junction diodes, MOS capacitors, and field-effect transistors, with a focus on how physical parameters affect their characteristics. The grading policy includes homework, a midterm, and a final exam, while recommended readings are provided for deeper understanding.

Uploaded by

張勝博
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Lecture 1

OUTLINE

• Electrons and holes

• Energy-band model

• Band gap energy


• Density of states
• Doping
Read: Neamen’s Chapters 1-3
Texts

• Textbook: “Modern Semiconductor Device for Integrated


Circuits“, Chenming Hu, Prentice Hall.

• Recommended Reference: “Semiconductor Physics and


Devices: Basic Principles”, D.A. Neamen, Mcgraw-Hill.
Goals and Prerequisite

On completion students should understand


• Fundamentals of basic semiconductor devices: the pn-
junction diode, the metal-oxide-semiconductor capacitor, and
the field-effect transistor.
• principles of device operation, and how their electrical
characteristics depend on their physical parameters and
operating conditions

Prerequisite
1. Semiconductor Device (I)
2. Semiconductor processes
3. Microelectronics
Grading & Office hours

Grading Policy:

1. 6 Homeworks (50%)
2. Midterm 20%
3. Final Exam 30%

Office hours:
@教師硏究室右邊最後一間
@Thur 1:00-3:00 PM and Wed 10:00-12:00 AM
Crystallographic Notation
Miller Indices: Notation Interpretation
(hkl) crystal plane
{hkl} equivalent planes
[hkl] crystal direction
<hkl> equivalent directions
h: inverse x-intercept of plane
k: inverse y-intercept of plane
l: inverse z-intercept of plane
(Intercept values are in multiples of the lattice constant;
h, k and l are reduced to 3 integers having the same ratio.)
Crystallographic Planes and Si Wafers

Silicon wafers are usually cut


along a {100} plane with a flat
or notch to orient the wafer
during IC fabrication:
Effects of Crystal Orientation and Stress
TSMC 2nm MBCFET Technology
Crystallographic Planes in Si
Unit cell:

View in <111> direction

View in <100> direction View in <110> direction

[Link]
Formation of Energy Bands
Si: From Atom to Crystal

Energy states in Si atom → energy bands in Si crystal


• The highest nearly-filled band is the valence band
• The lowest nearly-empty band is the conduction band
Energy Band Diagram

Ec
electron energy

Ev

distance
Simplified version of energy band model, indicating
• bottom edge of the conduction band (Ec)
• top edge of the valence band (Ev)
➢ Ec and Ev are separated by the band gap energy EG
Density of States
E
gc(E)
DE
Ec Ec

Ev Ev

gv(E)

g(E)dE = number of states per cm3 in the energy range between E and E+dE

Near the band edges:


mn* 2mn* (E − Ec )
gc ( E ) = E  Ec
 2h 3
m*p 2m*p (Ev − E )
gv ( E ) = E  Ev
 2h 3
The Fermi-Dirac Probability Function
Charge carriers in semiconductors

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