TOPICWISE DPPs FOR NEET BY TAMANNA CHAUDHARY

Semiconductors & it’s Devices

DPP- II; Biasing, Diode, Zener Diode and Voltage Regulation & Uses of Diode

1. When the forward bias voltage of a diode is changed from 0.6 V to 0.7 V, the current changes from 5 mA to
15 mA. Then its forward bias resistance is
a) 0.01 Ω b) 0.1 Ω c) 10 Ω d) 100 Ω
2. The circuit shown in the figure contains two diodes each with a forward resistance of 30 Ω and with
infinite backward resistance. If the battery is 3V, the current through the 50 Ω resistance (in ampere) is
70 Ω

70 Ω

3V 50 Ω
+

a) Zero b) 0.01 c) 0.02 d) 0.03

3. The potential in depletion layer is due to
a) Electrons b) Holes c) Ions d) Forbidden band
4. Find 𝑉!"
10W
30V

VAB 10W 10W

a) 10 𝑉 b) 20 𝑉 c) 30 𝑉 d) None of these
5. If no external voltage is applied across 𝑃-𝑁 junction, there would be
a) No electric field across the junction
b) An electric field pointing from 𝑁-type to 𝑃-type side across the junction
c) An electric field pointing from 𝑃-type to 𝑁-type side across the junction
d) A temporary electric field during formation of 𝑃-𝑁 junction that would subsequently disappear
6. A zener diode, having breakdown voltage equal to 15 𝑉, is used in a voltage regulator circuit shown in
figure. The current through the diode is

a) 20 𝑚𝐴 b) 5 𝑚𝐴 c) 10 𝑚𝐴 d) 15 𝑚𝐴
7. The current in the circuit shown in the figure, considering ideal diode is
100
3.2 V 3 V

a) 20 A b) 2 × 10#$ A c) 200 A d) 2 × 10#% A

8. Which of the following statements is not correct when a junction diode is in forward bias?
a) The width of depletion region decreases.
b) Free electrons on 𝑛-side will move towards the junction.
c) Holes on 𝑝-side move towards the junction.
d) Electrons on 𝑛-side and holes on 𝑝-side will move away from junction.
9. In 𝑝 − 𝑛 junction, the barrier potential offers resistance to
a) Free electrons in 𝑛-region and holes in –region
b) Free electrons in 𝑝-region and holes in 𝑛-region
c) Only free electrons in 𝑛-region
d) Only holes in 𝑝-region
10. Consider the following statements 𝐴 and 𝐵 and identify the correct choice of the given answers
𝐴. The width of the depletion layer in a 𝑃-𝑁 junction diode increases in forward bias
𝐵. In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
a) 𝐴 is true and 𝐵 is false b) Both 𝐴 and 𝐵 are false
c) 𝐴 is false and 𝐵 is true d) Both 𝐴 and 𝐵 are true
11. Within depletion region of p-n junction diode
a) 𝑝-side is positive and 𝑛-side is negative
b) 𝑝-side is negative and 𝑛-side is positive
c) Both sides are positive or both negative
d) Both side are neutral
12. A zener diode has a contact potential of 1 V in the absence of biasing. It undergoes Zener breakdown for an
electric field of 106 V-m#& at the depletion region of 𝑝-𝑛 junction. If the width of the depletion region is 2.5
𝜇m, what should be the reverse biased potential for the Zener breakdown to occur?
a) 3.5 V b) 2.5 V c) 1.5 V d) 0.5 V
13. Figure shows a diode connected to an external resistance and an emf. Assuming that the barrier potential
developed in diode is 0.5 V, obtain the value of current in the circuit in milli ampere.
100

4.5 V

a) 40 mA b) 60 mA c) 80 mA d) 100 mA
14. Zener breakdown in a semi-conductor diode occurs when
a) Forward current exceeds certain value b) Reverse bias exceeds certain value
c) Forward bias exceeds certain value d) Potential barrier is reduced to zero
15. A 2𝑉 battery is connected across the points 𝐴 and 𝐵 as shown in the figure given below. Assuming that the
resistance of each diode is zero in forward bias and infinity in reverse bias, the current supplied by the
battery when its positive terminal is connected to 𝐴 is
10 W

10 W

A B

a) 0.2 𝐴 b) 0.4 𝐴 c) Zero d) 0.1 𝐴

16. On increasing the reverse bias to a large value in a p-n junction, diode current
a) Increases slowly b) Remains fixed c) Suddenly increases d) Decreases slowly
17. 𝑝 − 𝑛 junction is said to be forward biased, when
The positive pole of the battery is joined to the 𝑝-semiconductor and negative pole to the 𝑛-
a)
semiconductor
The positive pole of the battery is joined to the 𝑛-semiconductor and negative pole to the 𝑛-
b)
semiconductor and 𝑝-semiconductor
c) The positive pole of the battery is connected to 𝑛-semiconductor and 𝑝-semiconductor
d) A mechanical force is applied in the forward direction
18. In the following circuit of 𝑃𝑁 junction diodes 𝐷& , 𝐷' and 𝐷$ are ideal then 𝑖 is
R
D1
R
D2

i D3 R

a) 𝐸/𝑅 b) 𝐸/2𝑅 c) 2𝐸/3𝑅 d) Zero

19. In forward bias, the width of potential barrier in a 𝑃-𝑁 junction diode
a) Increases b) Decreases
c) Remains constant d) First increases then decreases
20. In a 𝑃-𝑁 junction diode if 𝑃 region is heavily doped than 𝑛 region then the depletion layer is
a) Greater in 𝑃 region b) Greater in 𝑁 region
c) Equal in both region d) No depletion layer is formed in this case
21. In breakdown region, a 3ener diode behaves as a
a) Constant current source b) Constant voltage source
c) Constant resistance source d) Constant power source
22. The 𝑖-𝑉 characteristic of a 𝑃-𝑁 junction diode is shown below. The approximate dynamic resistance of the
𝑃-𝑁 junction when a forward bias of 2𝑣𝑜𝑙𝑡 is applied\
i (mA)
800

400

2 2.1 V (volt)

a) 1 Ω b) 0.25 Ω c) 0.5 Ω d) 5 Ω
23. What is the current through an ideal PN-junction diode shown in figure below

a) Zero b) 10 𝑚𝐴 c) 20 𝑚𝐴 d) 50 𝑚𝐴

24. The graph given below represents the 𝐼-𝑉 characteristics of a zener diode. Which part of the
characteristics curve is most relevant for its operation as a voltage regulator?
a) 𝑎𝑏 b) 𝑏𝑐 c) 𝑐𝑑 d) 𝑑𝑒
 : HINTS AND SOLUTIONS :
1 (c) 15 𝑣𝑜𝑙𝑡
∆) +.-#+.. 𝑖&45 = = 15𝑚𝐴
Forward biased resistance = = 1𝑘Ω
∆* (&0#0)×&+!" (20 − 15)𝑉 5𝑉 20
0.1 𝑖'0+5 = = = 𝐴 = 20𝑚𝐴
= = 10 𝛺 250Ω 250Ω 1000
10 × 10#$ ∴ 𝑖67879 ;<=;7 = (20 − 15) = 5 𝑚𝐴
2 (c) 7 (b)
In the circuit the upper diode 𝐷& is reverse biased Potential difference across diode
and the lower diode 𝐷' is forward biased. Thus = 3.2 – 3 = 0.2 V
there will be no current across upper diode ∴ Current through diode
junction. The effective circuit will be as shown in +.'
𝑖 = &++ = 2 × 10#$ A
figure.
8 (d)
70 Ω
In forward biasing both electrons and protons
move towards the junction and hence the width of
3V 50 Ω depletion region decreases.
+
9 (a)
Total resistance of circuit In 𝑝 − 𝑛 junction, the barrier potential offers
𝑅 = 50 + 70 + 30 = 150 Ω resistance to free electrons in n-region and holes
) $ in 𝑝-region.
Current in circuit, 𝐼 = = = 0.02 A.
3 &0+ 10 (c)
3 (c) In forward biasing of 𝑃𝑁 junction diode width of
The potential in depletion layer is due to ions. It depletion layer decreases. In intrinsic
appears as if some fictitious battery is connected semiconductor fermi energy level is exactly in the
across the junction with its negative pole middle of the forbidden gap
connected to 𝑝-region and positive pole
connected to 𝑛-region. The potential difference
developed across the junction due to migration of
majority charge carries in potential barrier.
4 (a) 11 (b)
Diode is in forwards biasing hence the circuit can In a p-n junction diode, electrons in conduction
be redrawn as follows band on 𝑛-type side travel across the junction and
10W leave the positively ionized impurity atoms
30V Parallel
unneutralised. Consequently, there is positively
VAB charged region adjacent to the junction in 𝑛-type
10W 10W
material. On 𝑝-type side the electrons which have
30 traversed the boundary recombine with positive
𝑉!" = × 5 = 10 𝑉 holes in the valence
(10 + 5) Unneutralised Unneutralised
acceptor atom donoratom

5 (b) + +

Across the 𝑃 − 𝑁 junction, a barrier potential is p - type n-type

+ + Electron

developed whose direction is from 𝑁 region to 𝑃 Hole

+ +

region
Extent Extent of
Acceptoratom Donor atom
of positive
(neutral) (neutral)
negative space
space charge

6 (b)
charge region
region on n-type
on p-type side
side

Voltage across zener diode is constant

band and form a layer of unneutralised negatively
ionised trivalent impurity atoms making a
negatively charged region as shown in figure. The
region around the junction is called charge
depletion region or space charge region. Hence,

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 within the depletion region, 𝑝-side is negative and R

𝑛-side is positive. R
12 (b)
Reverse biased potential for the zener breakdown
𝑉> = 𝐸𝑑 = 10. × 2.5 × 10#. = 2.5 volt i R
13 (c) E

19 (b)
14 (b) In forward biasing width of depletion layer
When reverse bias is increased, the electric field decreases
at the junction also increases. At some stage the 20 (b)
electric field breaks the covalent bond, thus the Depletion layer is more in less doped side
large number of charge carriers are generated. 21 (b)
This is called Zener breakdown When the reverse voltage across a zener diode
15 (a) exceeds the breakdown voltage 𝑉A , the current
Since diode in upper branch is forward biased and increases very sharply. In this region, the curve is
in lower branch is reversed biased. So current almost vertical. It means voltage across zener
)
through circuit 𝑖 = ; here 𝑟@ = diode diode is constant at 𝑉A even though the current
3?>#
resistance in forward biasing = 0 through it changes. Therefore, a zener diode
𝑉 2 behaves as a constant voltage source.
⇒𝑖= = = 0.2𝐴
𝑅 10
16 (c)
Under normal reverse voltage, a very little reverse
current flows through a 𝑝-𝑛 junction. However, if
the reverse voltage attains a high value, the
junction may breakdown with sudden rise in
reverse current.
If reverse voltage is increased continuously, the
22 (b)
kinetic energy of electrons (minority carriers)
The current at 2𝑉 is 400 𝑚𝐴 and at 2.1 𝑉 it is
may become high enough to knock out electrons
800 𝑚𝐴. The dynamic resistance in this region
from the semiconductor atoms. At this stage
∆𝑉 (2.1 − 2) 1
breakdown of the junction occurs characterised 𝑅= = #$
= = 0.25Ω
∆𝑖 (800 − 400) × 10 4
by a sudden rise of reverse current and a sudden
23 (c)
fall of the resistance of barrier region. This may
The potential of 𝑁-Side is more negative than that
destroy the junction permanently.
of 𝑃-Side, hence diode is in forward biasing from
17 (a)
circuit resultant potential is 2𝑉
For forward biasing of 𝑝 − 𝑛 junction, the positive
2
terminal of external battery is to be connected to ∴𝐼= = 20 𝑚𝐴
100
𝑝-semiconductor and negative terminal of battery
24 (d)
to the 𝑛-semiconductor.
When reverse bias is increased the electron field
18 (a)
across the junction also increases. At some stage
Diodes 𝐷& and 𝐷$ are forward biased and 𝐷' is
the electric field becomes so high that it breaks
reverse biased so the circuit can be redrawn as
the covalent bonds creating electron-hole pairs.
follows
This mechanism is known as zener breakdown. In
𝐸
⇒𝑖= breakdown region for a long range of load (𝑅B )
𝑅
the voltage remains the same though the current
may be large.