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    SK 45 GB 063: Semitop 2

    Uploaded by

    Agfagf212

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    SK 45 GB 063: Semitop 2

    Uploaded by

    Agfagf212
    44 views4 pages

    Original Title

    SK45GB063

    Copyright

    © Attribution Non-Commercial (BY-NC)

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    Copyright:

    Attribution Non-Commercial (BY-NC)
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    Download as pdf or txt
    44 views4 pages

    SK 45 GB 063: Semitop 2

    Uploaded by

    Agfagf212

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    SEMITOP

    2
    IGBT Module
    SK 45 GB 063
    SK 45 GAL 063
    SK 45 GAR 063
    Preliminary Data
    Features

    Compact design

    One screw mounting

    Heat transfer and isolation


    through direct copper bonded
    aluminium oxide ceramic (DCB)

    N channel, homogeneous Silicon


    structure (NPT-Non punchtrough
    lGBT)

    High short circuit capability

    Low tail current with low


    temperature dependence

    UL recognized, file no. E 63532


    Typical Applications

    Switching ( not for linear use )

    lnverter

    Switched mode power supplies

    UPS
    GB GAL GAR
    Absolute Maximum Ratings
    T
    s
    = 25 C, unless otherwise specified
    Symbol Conditions Values Units
    IGBT
    V
    CES
    600 V
    V
    GES
    20 V
    l
    C
    T
    s
    = 25 (80) C; 45 (30) A
    l
    CM
    t
    p
    < 1 ms; T
    s
    = 25 (80) C; 90 (60) A
    T
    j
    - 40 ... + 150 C
    Inverse/Freewheeling CAL diode
    l
    F
    T
    s
    = 25 (80) C; 57 (38) A
    l
    FM
    = - l
    CM
    t
    p
    < 1 ms; T
    s
    = 25 (80) C; 114 (76) A
    T
    j
    - 40 ... + 150 C
    T
    stg
    - 40 ... + 125 C
    T
    sol
    Terminals, 10 s 260 C
    V
    isol
    AC 50 Hz, r.m.s. 1 min. / 1 s 2500 / 3000 V
    Characteristics
    T
    s
    = 25 C, unless otherwise specified
    Symbol Conditions min. typ. max. Units
    IGBT
    V
    CE(sat)
    l
    C
    = 30 A, T
    j
    = 25 (125) C 1,8 (2) 2,1 (2,3) V
    V
    GE(th)
    V
    CE
    = V
    GE
    ; l
    C
    = 0,001 A 4,5 5,5 6,5 V
    C
    ies
    V
    CE
    = 25 V; V
    GE
    = 0 V; 1 MHz 2,8 nF
    R
    th(j-s)
    per lGBT 1 K/W
    per module K/W
    under following conditions:
    t
    d(on)
    V
    CC
    = 300 V , V
    GE
    = 15 V 45 ns
    t
    r
    l
    C
    = 30 A, T
    j
    = 125 C 35 ns
    t
    d(off)
    R
    Gon
    = R
    Goff
    = 22 O 250 ns
    t
    f
    25 ns
    E
    on
    + E
    off
    lnductive load 2,65 mJ
    Inverse/Freewheeling CAL diode
    V
    F
    = V
    EC
    l
    F
    = 30 A; T
    j
    = 25 (125) C 1,3 (1,2) 1,5 (1,45) V
    V
    (TO)
    T
    j
    = (125) C (0,85) (0,9) V
    r
    T
    T
    j
    = (125) C (9) (16) mO
    R
    th(j-s)
    1,2 K/W
    under following conditions:
    l
    RRM
    l
    F
    = 30 A; V
    R
    = 300 V 22 A
    Q
    rr
    dl
    F
    /dt = -500 A/s 2,2 C
    E
    off
    V
    GE
    = 0 V; T
    j
    = 125 C 0,2 mJ
    Mechanical data
    M1 mounting torque 2 Nm
    w 19 g
    Case SEMlTOP

    2 T 4
    SK 45 GB 063
    1 19-10-2005 RAM by SEMIKRON
    Fig.5 Typ. output characteristic, t
    p
    = 80s, 25 C Fig.6 Typ. output characteristic, t
    p
    = 80 s, 125 C
    Fig.7 Turn-on / -off energy = f (I
    C
    ) Fig.8 Turn-on / -off energy = f (R
    G
    )
    Fig.9 Typ. gate charge characteristic Fig.10 Typ. capacitances vs. V
    CE
    SK 45 GB 063
    2 19-10-2005 RAM by SEMIKRON
    Fig.11 Typ. switching times vs. I
    C
    Fig.12 Typ. switching times vs. gate resistor R
    G
    Fig.13 Diode turn-off energy dissipation per pulse
    SK 45 GB 063
    3 19-10-2005 RAM by SEMIKRON
    UL Recognized
    File no. E 63532
    Dimensions in mm
    SUGGESTED HOLEDlAMETER FOR THE SOLDER PlNS AND THE MOUNTlNG PlNS lN THE
    PCB: 2 mm
    Case T4
    Case T4 GB
    Case T4 GAL
    Case T4 GAR
    This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
    This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
    expressed or implied is made regarding delivery, performance or suitability.
    SK 45 GB 063
    4 19-10-2005 RAM by SEMIKRON

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