IRF9520
IRF9520
Features
6A, 100V rDS(ON) = 0.600 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance
Symbol
D
Ordering Information
PART NUMBER IRF9520 PACKAGE TO-220AB BRAND IRF9520
G
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
IRF9520 Rev. B
IRF9520
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF9520 -100 -100 -6 -4 -24 20 40 0.32 370 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC =100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.
Electrical Specications
PARAMETER
TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = -250A, VGS = 0V (Figure 10) VGS = VDS, ID = -250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC MIN -100 -2 -6 0.9 VGS = -10V, ID = -6A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz (Figure 11) Measured From the Modified MOSFET Contact Screw on Tab To Symbol Showing the Center of Die Internal Devices Measured From the Drain Inductances Lead, 6mm (0.25in) from Package to Center of Die
D LD
UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH
Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current
On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance
ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD
VDS > ID(ON) x rDS(ON) MAX, VGS = -10V VGS = 20V ID = -3.5A, VGS = -10V (Figures 8, 9) VDS > ID(ON) x rDS(ON)MAX, ID = -3.5A ( Figure 12) VDD = 0.5 x Rated BVDSS, ID -6.0A, RG = 50 , RL = 7.7 for VDSS = 50 MOSFET Switching Times are Essentially Independent of Operating Temperature
4.5
nH
LS
Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad
G LS S
7.5
nH
3.12 62.5
oC/W oC/W
IRF9520 Rev. B
IRF9520
Source to Drain Diode Specications
PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D
MIN -
TYP -
UNITS A A
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:
TC = 25oC, ISD = -6.0A, VGS = 0V (Figure 13) TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/s TJ = 150oC, ISD = -6.0A, dISD/dt = 100A/s
230 1.3
-1.5 -
V ns C
2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 15.4mH, RG = 25, peak IAS = 6.0A.
4.8
3.6
0.6 0.4
2.4
1.2
1 0.5 PDM
0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5
t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-3 10-2 10-1 1 10
10-4
IRF9520 Rev. B
-10 10s -8 ID, DRAIN CURRENT (A) 10 100s ID, DRAIN CURRENT (A) VGS = -10V VGS = -9V VGS = -8V
VGS = -7V
10ms 100ms DC
-4
VGS = -6V -2
TC = 25oC TJ = MAX RATED 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100
-50
-5 VGS = -8V VGS = -9V -3 VGS = -10V VGS = -6V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. VGS = -5V -1 VGS = -4V 0 0 -2 -3 -4 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) -5 VGS = -7V ID(ON), ON-STATE DRAIN CURRENT (A)
-10
-4
VDS I D(ON) x rDS(ON) MAX PULSE DURATION = 80s -8 DUTY CYCLE = 0.5% MAX. TJ = 125oC -6 TJ = 25oC TJ = -55oC
-2
-4
-2
2.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 1.6
2.2 VGS = -10V, ID = -4A PULSE DURATION = 80s 1.8 DUTY CYCLE = 0.5% MAX.
1.4
1.0
0.4
VGS = -20V
0.6
-40
40
80
120
IRF9520 Rev. B
500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD
1.05
0.95
200
0.85
100
CRSS
0.75 -40
40
80
120
160
-10
-20
-30
-40
-50
3 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. gfs, TRANSCONDUCTANCE (S) ISD, DRAIN CURRENT (A)
-100
-10
TJ = 150oC
-1.0
TJ = 25oC
-2
-8
-10
-0.1 -0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-5
VDS = -80V
-10
12
16
20
IRF9520 Rev. B
VDD VDD
0V VGS
DUT VGS RG
VDD
+
VDS VGS 0
90%
90%
CURRENT REGULATOR
VDS
Qgs D G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S +VDS ID CURRENT SAMPLING RESISTOR 0 DUT VDD Qgd Qg(TOT)
VGS
IG(REF)
IRF9520 Rev. B
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Preliminary
First Production
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Full Production
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Rev. H4
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