BPV10NF

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Vishay Semiconductors

Silicon PIN Photodiode

FEATURES
Package type: leaded Package form: T-1 Dimensions (in mm): 5 Radiant sensitive area (in mm2): 0.78 Leads with stand-off High radiant sensitivity Daylight blocking filter matched with 870 nm to 950 nm emitters
16140-1

High bandwidth: > 100 MHz at VR = 12 V Fast response times Angle of half sensitivity: = 20

DESCRIPTION
BPV10NF is a PIN photodiode with high speed and high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.

Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC

APPLICATIONS
High speed detector for infrared radiation Infrared remote control and free air data transmission systems, e.g. in combination with TSFFxxxx series IR emitters

PRODUCT SUMMARY
COMPONENT BPV10NF Note Test condition see table Basic Characteristics Ira (A) 60 (deg) 20 0.5 (nm) 790 to 1050

ORDERING INFORMATION
ORDERING CODE BPV10NF Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t 5 s, 2 mm from body Connected with Cu wire, 0.14 mm2 Tamb 25 C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW C C C C K/W

Rev. 1.8, 22-Nov-11

Document Number: 81503 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV10NF
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Vishay Semiconductors
TEST CONDITION IF = 50 mA IR = 100 A, E = 0 VR = 20 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm Ee = 1 mW/cm2, = 870 nm, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 5 V Ee = 1 mW/cm2, = 870 nm, VR = 5 V SYMBOL VF V(BR) Iro CD VO IK Ira Ira TKIra s() p 0.5 = 950 nm VR = 20 V, = 950 nm VR = 20 V, = 950 nm VR = 50 V, RL = 50 , = 820 nm VR = 50 V, RL = 50 , = 820 nm NEP D* tr tf 30 60 1 11 450 50 55 60 - 0.1 0.55 20 940 790 to 1050 70 3 x 10-14 3 x 1012 2.5 2.5 5 MIN. TYP. 1.0 MAX. 1.3 UNIT V V nA pF mV A A A %/K A/W deg nm nm % W/Hz cmHz/W ns ns

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current

Reverse light current

Temperature coefficient of Ira Absolute spectral sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Quantum efficiency Noise equivalent power Detectivity Rise time Fall time

VR = 5 V, = 870 nm

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

1000
Ira rel - Relative Reverse Light Current

1.4

Iro - Reverse Dark Current (nA)

1.2

100

1.0

10

0.8

VR = 20 V 1 20 40 60 80 100

VR = 5 V Ee =1 mW/cm2 = 870 nm 0 20 40 60 80 100

0.6 Tamb - Ambient Temperature (C)

94 8621

94 8436

Tamb - Ambient Temperature (C)

Fig. 1 - Reverse Dark Current vs. Ambient Temperature

Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

Rev. 1.8, 22-Nov-11

Document Number: 81503 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV10NF
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Vishay Semiconductors

1000
S()rel - Relative Spectral Sensivity

1.2 1.0 0.8 0.6 0.4 0.2 0.0 750

94 8426

Ira - Reverse Light Current (A)

100

10 VR = 5 V

= 870 nm

0.1 0.01
94 8622

0.1

10

850

950

1050

1150

Ee - Irradiance (mW/cm)

- Wavelength (nm)

Fig. 3 - Reverse Light Current vs. Irradiance

Fig. 6 - Relative Spectral Sensitivity vs. Wavelength

100

0 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm 1
2

10

20 30 - Angular Displacement

Ira - Reverse Light Current (A)

Srel - Relative Sensitivity

= 870 nm

40 1.0 0.9 0.8 0.7 50 60 70 80

10

1 0.1
94 8623

10

100
94 8624

0.6

0.4

0.2

VR - Reverse Voltage (V)

Fig. 4 - Reverse Light Current vs. Reverse Voltage

Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement

12 CD - Diode Capacitance (pF) 10 8 6 4 2 0 0.1

94 8439

E=0 f = 1 MHz

10

100

VR - Reverse Voltage (V)

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Rev. 1.8, 22-Nov-11

Document Number: 81503 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BPV10NF
www.vishay.com PACKAGE DIMENSIONS in millimeters

Vishay Semiconductors

Drawing-No.: 6.544-5185.01-4
96 12198

Rev. 1.8, 22-Nov-11

Document Number: 81503 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Document Number: 91000 Revision: 11-Mar-11

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