This document discusses different types of semiconductor devices used in power electronic converters, including diodes, MOSFETs, and IGBTs. MOSFETs are advantageous for high switching frequency applications due to their fast switching speeds. IGBTs were created to improve the switching frequency of BJTs. Power electronic converters experience different types of power losses during switching transitions including turn-on, turn-off, and conduction losses. Increasing the switching frequency of a converter can decrease the size of its energy storage components but also increases switching losses. Zero voltage resonant converters aim to minimize switching losses by turning switches on and off when voltages and currents are zero.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPTX, PDF, TXT or read online from Scribd
This document discusses different types of semiconductor devices used in power electronic converters, including diodes, MOSFETs, and IGBTs. MOSFETs are advantageous for high switching frequency applications due to their fast switching speeds. IGBTs were created to improve the switching frequency of BJTs. Power electronic converters experience different types of power losses during switching transitions including turn-on, turn-off, and conduction losses. Increasing the switching frequency of a converter can decrease the size of its energy storage components but also increases switching losses. Zero voltage resonant converters aim to minimize switching losses by turning switches on and off when voltages and currents are zero.
This document discusses different types of semiconductor devices used in power electronic converters, including diodes, MOSFETs, and IGBTs. MOSFETs are advantageous for high switching frequency applications due to their fast switching speeds. IGBTs were created to improve the switching frequency of BJTs. Power electronic converters experience different types of power losses during switching transitions including turn-on, turn-off, and conduction losses. Increasing the switching frequency of a converter can decrease the size of its energy storage components but also increases switching losses. Zero voltage resonant converters aim to minimize switching losses by turning switches on and off when voltages and currents are zero.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPTX, PDF, TXT or read online from Scribd
This document discusses different types of semiconductor devices used in power electronic converters, including diodes, MOSFETs, and IGBTs. MOSFETs are advantageous for high switching frequency applications due to their fast switching speeds. IGBTs were created to improve the switching frequency of BJTs. Power electronic converters experience different types of power losses during switching transitions including turn-on, turn-off, and conduction losses. Increasing the switching frequency of a converter can decrease the size of its energy storage components but also increases switching losses. Zero voltage resonant converters aim to minimize switching losses by turning switches on and off when voltages and currents are zero.
Copyright:
Attribution Non-Commercial (BY-NC)
Available Formats
Download as PPTX, PDF, TXT or read online from Scribd
Download as pptx, pdf, or txt
You are on page 1/ 22
Under the guidance of Dr.P.R.
Thakura Presented by Gopal Chandra Mahato (ME/EEE/1022/2011)
The important part of any power electronic converter is its semiconductor devices. The semiconductor devices that are typically used in converter are -Diodes -MOSFETs - IGBTs
Diodes are uncontrolled switches.
MOSFETs and IGBTs are controllable switches as they can be turned on and off by feeding a signal to their gate then removing it.
The MOSFETs main advantage is its high switching speed characteristics which allows them to be implemented in converters that operate with high switching frequencies (>100kHz).
MOSFETs are not suitable for higher power applications BJT is better suited for high power applications than the MOSFET. The BJT, however, turns on and off much slower than the MOSFET. So to improve the switching frequency of the BJT ,IGBT was created replacing the base of the BJT with the insulated gate of the MOSFET.
The real device require a finite time to switch from on-state to off-state and vice versa. The voltage and current vary during this transition. The product of voltage and current gives instantaneous power dissipated in the device.
There are three types of power loss in the device: - The turn-on transition power loss - The turn-off transition power loss - The conduction loss
A power electronic converter has energy storage elements such as inductors, capacitors and transformers that account for much of its overall size. As a converter's switching frequency is increased, the component values of its energy storage elements decrease , as do their physical size and weight.
There are, however, drawbacks to operating a power electronic converter with high switching frequency, the key one being that doing so increases the converter's switching losses. The shortcoming can be minimized if each switch in a converter is turned on and off when the voltage across it and/or current through it is zero at the instant of switching.
-Switch voltage brought to zero before gate voltage is applied -Ideal, zero-loss transition
-Low-loss transition
A zero voltage resonant converter consists of diode D1 and capacitor C connected across the switch S.
Mode1 This mode is valid for 0 t t1 .Both switch S1 and diode Dm are off . Capacitor C charges at the constant rate of load current I0 .The capacitor voltage Vc is given by Vc =(I0 /C)*t
This mode ends at time t=t1 when VC=VS
Mode 2 This mode is valid for 0 t t2 . The switch S1 is still off , but diode Dm turns on. The capacitor voltage Vc is given by VC=Vmsint+VS
The inductor current is given by IL=I0cost This mode ends at t=t2 when VC=VS and IL=I0
Mode 3
This mode is valid for 0 t t3 .The capacitor voltage that falls from VS to zero is given by VC=VS Vmsint The inductor current is given by IL=-I0cost This mode ends at t=t3 when VC=0 and IL=Il3
Mode 4
This mode is valid for 0 t t4 . The switch S1 is turned on and diode Dm remains on . The inductor current which rises linearly from Il3 to I0 is given by IL = -Il3 +(Vs /L)*t
Mode 5
This mode is valid for 0 t t5 . The switch S1 is on but diode Dm is off .This mode ends at t5 when switch S1 is turned off again and the cycle is repeated
Gate pulse
Capacitor voltage
Inductor current
To develop a design procedure that will allow for the proper selection of components to be implemented in a ZVS-PWM isolated fullbridge boost converter. To confirm the feasibility of the converter by computer simulation and experimental work.
REFERENCES N. Mohan, T. Undeland, and W. P. Robbins, Power electronics, Converters, Applications and Design, John Wiley & Sons Inc., 3rd edition, 1995
Muhammad H. Rashid ,Power Electronics: Circuits, Devices and Applications, Pearson/Prentice Hall,3 rd edition,2004 Dr. P. S.Bimbra,Power Electronics,Khanna Publishers, 4th edition,2009 M D Singh,K B Khanchandani,Power Electronics, TMH,second edition 2007 Mohammadjavad Baei , Gerry Moschopoulos, A ZVS-PWM Full-Bridge Boost Converter for Applications Needing High Step-Up Voltage Ratio in IEEE APEC 2012,pp. 2213 - 2217
