Magnetoresistive Random Access Memory (MRAM)

Magnetoresistive Random
Access Memory (MRAM)
Presented By
Y. Janardhan Reddy (06-555)

List of Contents
• Magnetic Core RAM
• History
• Characteristics
• Magnetoresistance
• Giant Magnetoresistance (GMR)
• Tunnel Magnetoresistance (TMR)
• Spin Valve
• MRAM
• Fixed Layer
• Reading Process
• Writing Process
• Other RAM Technologies
• MRAM Vs Other RAM Technologies
• Future MRAM Improvements
• MRAM Status
Magnetic RAM
MRAM is memory technology that uses electron spin to store

information
• MRAM uses magnetism rather than electrical power to store

bits of data.
• No refresh is needed to retain the data.
• For users of laptops and other mobile devices, such as MP3
players and cell phones, MRAM is the holy grail of longer
battery life.
Magnetic Core RAM
By the early 1960’s, Magnetic Core RAM became largely

universal as main memory, replacing drum memory
Magnetic Core RAM
• The memory cells consist

of wired threaded tiny
ferrite rings (cores).
• X and Y lines to apply

the magnetic filed.
• Sense/Inhibit line to
‘read’ the current pulse
when the polarization of
the magnetic field changes.
History
• 2003 - A 128 Kbit MRAM chip was introduced, manufactured with
a 180 nm lithographic process
• 2004 - Infineon unveiled a 16-Mbit prototype, manufactured with a

180 nm lithographic process
•2005 - Sony announced the first lab-produced spin-torque-transfer

MRAM
• 2007 - Tohoku University and Hitachi developed a prototype 2

Mbit Non-Volatile RAM Chip employing spin-transfer torque
switching
• 2008 - Scientists in Germany have developed next-generation

MRAM that is said to operate with write cycles under 1 ns.
• 2009 - Hitachi and Tohoku University demonstrated a 32-Mbit

spin-transfer torque RAM (SPRAM)
Characteristics
• Non-volatility
• Infinite endurance
• High speed performance
• Low cost
Giant Magnetoresistance (GMR)
Two thin films of altering

ferromagnetic materials
and a non-magnetic layer-
spacer.
R R  R
GMR(%)  
R R
Tunnel Magnetoresistance (TMR)
Two thin films of altering

ferromagnetic materials
and an insulating spacer.
Fe/MgO/Fe junctions reach over 200% decrease in

electrical resistance at room temperature
600 (room temperature)-1100 (4.2 K) % TMR at

junctions of CoFeB/MgO/CoFeB
Spin Valve GMR
• Hard layer: magnetization is
fixed.
• Soft layer: magnetization is free

to rotate.
• Thin non-ferromagnetic spacer

~3 nm.
• Spacer material Cu (copper) and

ferromagnetic layers NiFe
(permalloy).
• This configuration used in hard

drives.
Magnetic Tunnel Junction (MTJ)
Commonly used insulating materials are Aluminum oxide

(Al O ) and crystalline Magnesium oxide (MgO)
Magnetic RAM Architecture
•
MRAM
One of the two plates is a permanent magnet set to a particular

polarity, the other's field will change to match that of an external
field.
MRAM: Fixed layer
The bottom layers give an effect of fixed (pinned) layer due to

interlayer exchange coupling between ferromagnetic and spacer
layer of synthetic antiferromagnetic.
Reading process
 An MRAM chip reads information by measuring the electrical
resistance of a specific cell that, in turn, depends upon the alignment
of the magnetic moments of the layers of the cell.
 To read a bit of information, a current is passed through the memory

cell.
 If the magnetic moments are in a parallel orientation, then the

detected resistance would be smaller than if they were in an anti-
parallel orientation.
MRAM: Reading process
• Transistor is “ON”
• Measuring of electrical
resistance of a small sense
current from a supply line
through the cell to the
ground.
Writing process
 Write is achieved by the alignment of the magnetic moments of the
two memory layers into one or the other relative orientation.
 Current is passed through two sets of parallel wires or write lines

(called a bit line and a digit or word line), which pass over and
beneath the memory cells, respectively
 To write to a particular memory cell (bit), current is passed through

the two wires that intersect at that memory cell.
MRAM: Writing process
• Transistor is “OFF”
• When current is
passed through the write
lines, an induced
magnetic field is created
at the junction, which
alters the polarity of the
free layer.
MRAM: Writing process
• In order to change the
polarity of the free layer,
both fields are necessary.
• Only the bit in which

current is applied in both
hard and easy axis will be
written. The other bits will
remain half-select.
Other RAM Technologies
DRAM
Each bit of data is stored in a

separate capacitor within an
integrated circuit
Characteristics
• Volatile
• The highest density RAM
currently available
• The least expensive one
SRAM
Each bit is stored on four

transistors that form two
cross-coupled inverters
Characteristics
• Expensive
• Volatile & Fast
• Low power consumption
• Less dense than DRAM
Flash RAM
Stores information in an array

of memory cells made from
floating-gate transistors
Characteristics
• Cheap
• Non-volatile
• Slow
• Limited endurance
Comparison Table
• Credit: http://www.tfot.info/
MRAM Vs Other RAM Technologies
MRAM combines the

best characteristics of
DRAM, SRAM and
Flash RAM
Advantages
 Proposed uses for MRAM include devices such as:

◦ Aerospace and military systems
◦ Digital Cameras
◦ Notebooks
◦ Smart Cards
◦ Mobile Telephones
◦ Cellular base stations
◦ Personal Computers
Future MRAM Improvements
Thermal Assisted Switching
• Solves the first-generation

selectivity and stability
problems
• Cost-effective and scalable

memory technology to at least
the 32nm node
Future MRAM Improvements
Spin Torque Transfer
• No applied magnetic field

• Utilizes heavily spin polarized
current
• The magnetization of nano-
elements is flipped back and forth
• Still has challenges in basic
physics and materials to overcome
Any Queries??
Thank you…

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What is MRAM?

What is MRAM?

What are the different types of magnetoresistance?

What are the different types of magnetoresistance?

Magnetoresistive Random

Access Memory (MRAM)

Y. Janardhan Reddy (06-555)

MRAM is memory technology that uses electron spin to store

• MRAM uses magnetism rather than electrical power to store

By the early 1960’s, Magnetic Core RAM became largely

• The memory cells consist

• X and Y lines to apply

• 2004 - Infineon unveiled a 16-Mbit prototype, manufactured with a

•2005 - Sony announced the first lab-produced spin-torque-transfer

• 2007 - Tohoku University and Hitachi developed a prototype 2

• 2008 - Scientists in Germany have developed next-generation

• 2009 - Hitachi and Tohoku University demonstrated a 32-Mbit

• High speed performance

Two thin films of altering

Two thin films of altering

Fe/MgO/Fe junctions reach over 200% decrease in

600 (room temperature)-1100 (4.2 K) % TMR at

• Soft layer: magnetization is free

• Thin non-ferromagnetic spacer

• Spacer material Cu (copper) and

• This configuration used in hard

Commonly used insulating materials are Aluminum oxide

One of the two plates is a permanent magnet set to a particular

The bottom layers give an effect of fixed (pinned) layer due to

 To read a bit of information, a current is passed through the memory

 If the magnetic moments are in a parallel orientation, then the

 Current is passed through two sets of parallel wires or write lines

 To write to a particular memory cell (bit), current is passed through

• Only the bit in which

Each bit of data is stored in a

Each bit is stored on four

Stores information in an array

MRAM combines the

 Proposed uses for MRAM include devices such as:

◦ Cellular base stations

Thermal Assisted Switching

• Solves the first-generation

• Cost-effective and scalable

Spin Torque Transfer

• No applied magnetic field

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