02 Direct and Indirect Band Gap Semiconductor

Direct and Indirect Bandgap
Semiconductors
Direct and Indirect bandgap Semiconductor
Energy–momentum diagrams showing the types of transition:

(a) direct bandgap semiconductor;
(b) indirect bandgap semiconductor
Direct bandgap Semiconductor
Electrons and holes on either side of the forbidden energy gap have the
same value of crystal momentum and thus direct recombination is
possible.
The energy maximum of the valence band occurs at the same value of
electron crystal momentum as the energy minimum of the conduction
band.
Hence when electron–hole recombination occurs the momentum of the

electron remains virtually constant and the energy released, which
corresponds to the bandgap energy Eg, may be emitted as light.
This direct transition of an electron across the energy gap provides an

efficient mechanism for photon emission.
The average time that the minority carrier remains in a free state before
recombination (the minority carrier lifetime) is short (10−8 to 10−10 s).
Indirect bandgap Semiconductor
The maximum and minimum energies occur at different values of crystal
momentum.
For electron–hole recombination to take place it is essential that the

electron loses momentum such that it has a value of momentum
corresponding to the maximum energy of the valence band.
The conservation of momentum requires the emission or absorption of

a third particle, a phonon.
Hence, the recombination in indirect bandgap semiconductors is

relatively slow .
There is a much longer minority carrier lifetime, together with a

greater probability of nonradiative transitions.
Definition of Recombination
 A process whereby electrons and holes are
annihilated or destroyed.
 Reverse process is Generation: A process whereby
electrons and holes are created.
 Classification:
 Radiative Recombination: Photon
 Nonradiative Recombination: Phonon or lattice vibration
Light emission in semiconductors
•Light emission in semiconductors is a result of
three processes:
• Generation of electron-hole pairs
• Relaxation and/or diffusion of carriers
• Recombination
Applications:
• Light emitting diodes
• Laser diodes
• Phosphors
Light emission in semiconductors
Luminescence: Process by which

Electron hole pairs are created.
Excitation source:
Light (laser) Photoluminescence
Electron Cathodoluminescence
Electric field Electroluminescence
Chemical reaction Chemiluminescence
Radiative and Nonradiative recombination
• The dwell time of electrons in CB is very shortThe Probability of radiative

recombination is very high in direct bandgap semiconductors.
• The dwell time of electrons in CB is very highThe Probability of radiative

recombination is very less in Indirect bandgap semiconductors.
• In nonradiative recombination , the impurities and defects in the lattice

manifests themselves as traps and recombination centers.
• So the electron and hole will recombine nonradiatively in such defect centres
and the excess energy is dissipated as heat.(not suitable for realization of
light sources such as LED’s and LASER’S)
Other Radiative recombination Process
Other Radiative recombination Process
• Energy levels may be introduced into the band gap by impurities or

lattice defects which may greately increase electron hole recombination.
• The recombination process can thus be either radiative or nonradiative.
• An indirect bandgap semiconductor material may be made into a more

useful electroluminescent material by the addition of impurity centres
which will effectively convert it into a direct bandgap material.
• Eg: Introduction of nitrogen as an impurity into gallium phosphide.

• Nitrogen forms an isoelectronic impurity but with a different covalent
radius and electronegativity. The impurity captures an electron and act as
an isoelectronic trap. The trap attracts a hole and direct transition takes
place.
• Conversion of indirect to direct bandgap transitions is only readily achieved

in materals where the direct and indirect bandgaps have a small energy
 Optical fiber transmission uses wavelengths that are in the
near-infrared portion of the spectrum, just above the visible,
and thus undetectable to the unaided eye.
 Both lasers and LEDs are used to transmit light through

optical fiber.
 Lasers are usually used for 1310- or 1550-nm single-mode

applications.
 LEDs are used for 850- or 1300-nm multimode applications.

Compound Semiconductors
• Compound semiconductors are elements of different group
from periodic table.
• Attractive feature of the binary compounds is that they can
be combined or alloyed to from ternary or quaternary
compounds
• By choosing different binary compounds, it is possible to
select different bandgap.
Indium gallium arsenide InGaAs
Indium gallium phosphide InGaP
Aluminium gallium indium phosphide
AlGaInP Aluminium gallium arsenide
phosphide AlGaAsP
Transmission Media and Choice of Materials
• Most of the light sources contain III-V ternary & quaternary
compounds.
• Ga1x Alx As by varying x it is possible to control the band-gap energy
and thereby the emission wavelength over the range of 800 nm to 900
nm. The spectral width is around 20 to 40 nm.
• In1x Ga x Asy P1y By changing 0<x<0.47; y is approximately 2.2x, the
emission wavelength can be controlled over the range of 920 nm to
1600 nm. The spectral width varies from 70 nm to 180 nm when the
wavelength changes from 1300 nm to 1600 nm.

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Direct and Indirect Bandgap

Energy–momentum diagrams showing the types of transition:

Hence when electron–hole recombination occurs the momentum of the

This direct transition of an electron across the energy gap provides an

For electron–hole recombination to take place it is essential that the

The conservation of momentum requires the emission or absorption of

Hence, the recombination in indirect bandgap semiconductors is

There is a much longer minority carrier lifetime, together with a

Luminescence: Process by which

• The dwell time of electrons in CB is very shortThe Probability of radiative

• The dwell time of electrons in CB is very highThe Probability of radiative

• In nonradiative recombination , the impurities and defects in the lattice

• Energy levels may be introduced into the band gap by impurities or

• The recombination process can thus be either radiative or nonradiative.

• An indirect bandgap semiconductor material may be made into a more

• Eg: Introduction of nitrogen as an impurity into gallium phosphide.

• Conversion of indirect to direct bandgap transitions is only readily achieved

 Both lasers and LEDs are used to transmit light through

 Lasers are usually used for 1310- or 1550-nm single-mode

 LEDs are used for 850- or 1300-nm multimode applications.

Indium gallium arsenide InGaAs

Indium gallium phosphide InGaP

Aluminium gallium indium phosphide

AlGaInP Aluminium gallium arsenide

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