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First Electrically Pumped Hybrid Silicon Laser

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First Electrically

Pumped Hybrid
Silicon Laser

Sept 18th 2006

The information in this


presentation is under embargo
until 9/18/06– 10:00 AM PST

1
Agenda

Dr. Mario Paniccia


Director, Photonics Technology Lab
Dr. John Bowers
Professor, UC Santa Barbara

• What We are Announcing


• Silicon Photonics Overview
• Lasers & Light Emission with Silicon Photonics
• Joint Collaboration – Hybrid Silicon Laser
• Hybrid Silicon Laser Test Results
• Summary

2
What We are Announcing
 Research Breakthrough: 1st Electrically pumped Hybrid
Silicon Laser
– A joint collaboration between UCSB and Intel Corporation
– Combines the light emitting capabilities of Indium phosphide with the high volume, low
cost capabilities of silicon
– Addresses one of the last major hurdles to silicon photonic chips
 Vision:
– Build chips containing 10 to hundreds of Hybrid Silicon Lasers
– Built using high-volume, low cost manufacturing processes
– Enables terabit optical links
 Background
– Silicon is a poor light emitter while Indium phosphide based materials are great light
emitters
– However, Indium phosphide lasers are expensive to manufacture
– Novel design combined with a manufacturing process where a unique “glass glue” was
used to bond the two materials together

3
The Photonic Dilemna

 Fiber can carry much more bandwidth than


copper

 However, it is much more expensive…..

4
Today's High Speed Interconnects
Optical Copper
Chip to Chip
Metro & 1 – 50 cm
Long Haul
0.1 – 80 km Billions
Board to
Board

Volumes
50 – 100 cm
Rack to Millions
Rack
1 to 100
m
Thousands

Decreasing Distances→

Goal: Drive optical to high volumes and low costs

5
Photonics: The technology of emission, transmission,
control and detection of light (photons) aka fiber-
optics & opto-electronics

Today: Most photonic devices made with exotic


materials, expensive processing, complex packaging

Silicon Photonics Vision: Research effort to develop


photonic devices using silicon as base material and do
this using standard, high volume silicon
manufacturing techniques in existing fabs

Benefit: Bring volume economics to optical


communications

6
Intel’s Silicon Photonics Research

Continuous Wave
Silicon Raman 1GHz ( Feb ‘04)
Laser 10 Gb/s (Apr ‘05)
(Feb ‘05)

Electrically
Pumped
Hybrid
Silicon laser
(September 2006) First: Innovate to prove silicon is a viable
optical material

7
Integration Vision
Time

TODAY
Device level –
Prove silicon
viable
FUTURE
Monolithic?

Integrate silicon devices


into hybrid modules

Increasing silicon
integration over time F
8
The First Laser
Developed by Maiman, this ruby laser used a flash bulb as an optical pump

Fully Partially
Reflective FLASH BULB Reflective
Mirror Mirror

LASER
BEAM
RUBY CRYSTAL ROD

Published in Nature, August 6, 1960


9
Raman Laser
Announced in Feb 2005

First CW silicon laser


•Research Breakthrough
•Based on the Raman effect
•Optically pumped

Radiative recombination coefficient (10-12cm3/s)


Indium Phosphide
Want: Electrically Pumped
• Silicon is an indirect bandgap material
Gallium Arsenide
• Poor radiative recombination coefficient
Indium Antimonide
• Result: Silicon emits heat, few photons
Germanium
Stimulated
Emission
Silicon

10
Options for Integrating Light Sources

Hybrid Silicon Laser


• Bond InP based material Off-chip Laser
to Silicon • High power laser required
• No alignment • Requires fiber attach
• Many lasers with one • Non-integrated solution
bonding step Direct Attached Laser • Expensive
• Amenable to high •Tight alignment tolerances
integration •Requires gold metal bonding
• Potentially lowest cost •Passive alignment challenges
•Less Expensive

11
Joint Intel / UCSB Collaboration
 Goal: Create a hybrid silicon laser
 Combine the light emitting properties of Indium phosphide
with light routing and manufacturability properties of silicon

Joint team and 3 year research grant


UCSB – Indium phosphide and
wafer bonding expertise
• Alex Fang (ex Intel intern)
• Professor John Bowers
• Hyundai Park

Intel – Silicon and


manufacturing expertise
• Dr Richard Jones
• Oded Cohen
• Dr Mario Paniccia

12
Hybrid Silicon Laser
Using Evanescent Coupling

•We start with a cross sectional view of


Indium Phosphide
waveguide Cross an Indium Phosphide waveguide
Section
•When a voltage is applied to the InP it
will begin to emit light

•If we bring a silicon waveguide up to


the InP, light will couple into the Si
waveguide

•This is evanescent coupling

Challenge: How do you bond these two materials


together?

13
Bonding Process

The Hybrid Silicon


Laser used a unique
bonding technique
Indium Phosphide

Silicon

 Previous attempts used crystal growth


– Difficult to overcome lattice mismatch/threading dislocation
– Causes poor performance
 Benefits of the UCSB/Intel approach
– Removes issue with lattice mismatch
– Plasma process produces ~25 atom thick “glass-glue”
– This “glass-glue” efficiently bonds the two materials
– Low temperature manufacturable process

14
Process Animation

1) A waveguide is etched in silicon 2) The Indium phosphide is processed


to make it a good light emitter

3) Both materials are exposed to the 4) The two materials are bonded
oxygen plasma to form the “glass-glue” together under low heat

15
Process Animation

5) The Indium phosphide is etched and 6) Photons are emitted from the
electrical contacts are added Indium Phosphide when a voltage is
applied

7) The light is coupled into the


silicon waveguide which forms the
laser cavity. Laser light emanates
from the device.
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Hybrid Silicon Laser
How we create a laser in silicon

 The Indium Phosphide emits the


light into the silicon waveguide
 The silicon acts as laser cavity:
 Silicon waveguide routes the light
 End Facets are reflectors/mirrors
 Light bounces back and forth and get
amplified by InP based material

17
Hybrid Laser Structure

SEM (Scanning Electron Microscope) Photograph

18
First Electrically Pumped CW Lasing
Measured Laser output power vs current

Threshold Current
 At 65 mA with plans to
get to ~ 20 mA
Output power
 At 1.8 mW, Good for
optical interconnects
Temperature
 Operating at 40 C with
plans for > 70 C

Threshold Voltage = 2V

Initial testing shows good performance

19
Electrically Pumped Laser Wavelength

 7 Hybrid Silicon Lasers


– All fabricated with a single
bond step
– Up to 36 lasers are on one die

 Lasing Output at 1577nm


– This is adjustable via modifying
the silicon waveguides

20
Silicon Hybrid Laser
1 inch

21
Tera-leap to Parallelism:
10’s to 100’s
of cores Era of
Tera-Scale
ENERGY-EFFICIENT PERFORMANCE

Computing

Quad-Core

More performance
Dual Core
Using less energy

Hyper-Threading
The days of
Instruction level parallelism single-core chips

TIME

All this compute capability may require


high speed optical links
22 Intel Confidential
High Integration

Optical Fiber

Multiplexor

25 modulators at 40Gb/s

25 hybrid lasers

An future integrated terabit per second


optical link on single chip

23
Integrating into a Tera-scale System

This transmitter
would be combined Rx
with a receiver T
x

Which could then be built into an


integrated, silicon photonic chip!!

24
Integrating into a Tera-scale System

This integrated silicon photonic


chip could then be integrated
into computer boards And this board could be
integrated into a Tera-
scale system

25
Summary
 Research Breakthrough: 1st Electrically pumped Hybrid
Silicon Laser
– A joint collaboration between UCSB and Intel Corporation
– Combines the light emitting capabilities of Indium phosphide with the high volume, low
cost capabilities of silicon
– Addresses one of the last major hurdle to silicon photonic chips
 Vision:
– Build chips containing 10 to 100s of Hybrid Silicon Lasers
– Built using high-volume, low cost manufacturing processes
– Enables terabit optical links
 Background
– Silicon is a poor light emitter while Indium phosphide based materials are great light
emitters
– However, Indium phosphide lasers are expensive to manufacture
– Novel design combined with a manufacturing process where a unique “glass glue” was
used to bond the two materials together

26
Acknowledgements: UCSB and
Professor Bowers would like to thank
Jag Shah and DARPA for funding some
of this research.

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