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Basic Electronics (ES-112)
Basic Electronics (ES-112)
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Lecture 4-5
4
PN Junction Diode
Introduction
The origin of a wide range of electronic devices being used can be traced back to
a simple device, the p–n junction diode.
The p–n junction diode is formed when a p-type semiconductor impurity is doped
on one side and an n-type impurity is doped on the other side of a single crystal.
All the macro effects of electronic devices, i.e., wave shaping, amplifying or
regenerative effects, are based on the events occurring at the junction of the p–n
device.
Most modern devices are a modification or amalgamation of p–n devices in
various forms.
Prior to the era of semiconductor diodes, vacuum tubes were being extensively
used. These were bulky, costly and took more time to start conducting because of
the thermo-ionic emission.
The semiconductor diodes and the allied junction devices solved all these
problems.
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Diode
The free electrons in the n region are randomly drifting in all directions.
At the instant of the p-n junction formation. the free electrons near the
junction in the n region begin to diffuse across the junction into the p region
where they combine with holes near the junction, as shown in Figure
When the p-n junction is formed,
the n region loses free electrons
as they diffuse across the
junction.
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The term depletion refers to the fact that the region near the pn junction is
depleted of charge carriers (electrons and holes) due to diffusion across
the junction.
After the initial surge of free electrons across the pn junction. the depletion
region has expanded to a point where equilibrium is established and there
is no further diffusion of electrons across the junction.
A point is reached where the total negative charge in the depletion region
repels any further diffusion of electrons (negatively charged particles) into
the p region (like charges repel) and the diffusion stops.
Any time there is a positive charge and a negative charge near each
other, there is a force acting on the charges as described by
Coulomb's law.
In the depletion region there are many positive charges and many
negative charges on opposite sides of the pn junction,
This electric field is a barrier to the free electrons in the n region, and
energy must be expended to move an electron through the electric
field.
That is. external energy must be applied to get the electrons to move
across the barrier of the electric field in the depletion region.
The potential difference of the electric field across the depletion
region is the amount of voltage required to move electrons through
the electric field.
This potential difference is called the barrier potential and is
expressed in volts.
Stated another way, a certain amount of voltage equal to the barrier
potential and with the proper polarity must be applied across a pn
junction before electrons will begin to flow across the junction.
The barrier potential of a pn junction depends on several factors.
including
the type of semi conductive material.
the amount of doping,
and the temperature.
The typical barrier potential is approximately 0.7 V for silicon and 0.3
V for germanium at 25°C.
Biasing a Diode
• In forward bias the depletion region shrinks slightly in width. With this
shrinking the energy required for charge carriers to cross the depletion
region decreases exponentially.
• This causes the electric field produced by the ions to cancel out the
applied reverse bias voltage.
Short Circuit
Open Circuit
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Graphical PN-Junction Diode V-I Characteristic
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Graphical PN-Junction Diode V-I Characteristic
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Forward Characteristics
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Reverse Characteristics
voltage or point at which the electric current reaches its maximum level
and further increase in voltage does not increase the electric current is
called reverse saturation current.
The reverse saturation current is depends on the temperature. If
temperature increases the generation of minority charge carriers
increases.
Hence, the reverse current increases with the increase in
temperature.
reverse saturation current in the germanium diodes is greater than the
silicon diodes.
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Depletion Region Breakdown
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Depletion Region Breakdown
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Avalanche breakdown
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Avalanche breakdown
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Diode Equation
ID (mA)
• VD = Bias Voltage
• ID = Current through
Diode. ID is Negative
for Reverse Bias and IS
Positive for Forward VBR
Bias
~V VD
• IS = Saturation Current
• VBR = Breakdown
Voltage
• V = Barrier Potential
Voltage (nA)
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Diode Equation
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Example
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In going from 20oC to 100oC , the temperature increases in 8
increments of 10 each (100-20)=80; 80/10=8. Therefore IS doubles 8
times , i.e. ,increases by a factor of 28 =256. so at 100oC , IS = 256 ×
10-13 A
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Temperature Effects on V-I characteristics
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Temperature Effects on V-I characteristics
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Examples
Result
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Examples
Calculate output voltage
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Exercise
42
Exercise
43
Exercise
44
End of Lecture