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PHOTONIC DEVICES INTRODUCTION

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Ankit Pandey
Ankit Pandey

The document discusses recent trends in photonic devices. It begins by defining optics and photonics, and describes some applications of photonics including information technology, healthcare, sensing, lighting and displays. It then explains that photonic devices manipulate or detect light, providing examples like lasers, LEDs and solar cells. The document goes on to discuss latest trends like nanophotonics using graphene, carbon nanotubes and photonic crystals. It also covers silicon photonic devices using silicon-germanium transistors and germanium-tin phototransistors. In conclusion, it predicts future applications of photonics in areas like e-paper, solar panels and light-emitting fabrics.

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ANKIT KUMAR PANDEY ELECTRONICS & COMM. ENGG. NIT DELHI 11 May 2015 1ANKIT PANDEY
 Introduction  Photonics areas  What are photonic devices?  What drives the application of photonic devices?  Latest Trends in Photonic Devices  Conclusions 11 May 2015 2ANKIT PANDEY
 Optics: • Properties of light and its interaction with matter • Construction of instruments that use or detect it  Photonics: • Use of radiant energy (such as light): photon • Photonics - photon ↔ Electronics - electron 11 May 2015 3ANKIT PANDEY
 Strength: Interdisciplinary nature  Examples: • Information Technology and Telecommunications • Health Care and Life Sciences – Biophotonics • Photonic Sensing and detection • Lighting, Energy, and Displays • In various manufacturing processes • Security and Defence 11 May 2015 4ANKIT PANDEY
 Photonic devices are components for creating, manipulating, or detecting light  Includes: • laser diodes • LEDs • Solar and photovoltaic cells • displays and optical amplifiers.  Other examples include devices for: • Modulating a beam of light • Combining/separating light beams of different wavelength 11 May 2015 5ANKIT PANDEY
 Bandwidth , fast data processing and transfer.  Contactless measuring characteristics.  Processing possibilities of materials.  Energy saving.  Cost and dimension reduction. 11 May 2015 6ANKIT PANDEY
1.Nanophotonics • Study of the behaviour of light on the nanometer scale • Interaction of nanometer-scale objects with light Ex; 4th century Roman glass cage cup(Lycurgus Cup). 11 May 2015 7 Fig.1 Lycurgus Cup ANKIT PANDEY
 Natural examples of Nanophotonics- • ZnO nanoparticles in Peacock’s feathers • Photoreceptor rhodopsin Fig.2. ZnO nanoparticles in Peacock’s feathers Fig.3 Photoreceptor rhodopsin 11 May 2015 8ANKIT PANDEY
1.1 Graphene based photonic devices Graphene- a 2-D one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice. Fig.4. Graphene lattice 11 May 2015 9 Nanophotonics ANKIT PANDEY
 Graphene Properties • High mobility • Optical transparency • Flexibility • Robustness and environmental stability.  Graphene based solar cells and light-emitting devices ,touch screens, photodetectors and ultrafast lasers are being developed.[1] 11 May 2015 10 [1] F. Bonaccorso, Z. Sun, T. Hasan, and a. C. Ferrari, “Graphene Photonics and Optoelectronics,” vol. 622, no. August 2010, pp. 1–26, 2010. Graphene based photonic devices ANKIT PANDEY
11 May 2015 11ANKIT PANDEY
1.2 Carbon nanotubes (CNT) based photonic devices-  CNTs - allotropes of carbon with a cylindrical nanostructure  Advantages of CNT-based photonics devices: • Ultrafast response • Robustness • Tunability of wavelength • Compatibility to fibers. Fig.5 Carbon Nanotube 11 May 2015 12 Nanophotonics ANKIT PANDEY
1.3 Photonic crystals • Periodic optical nanostructures • Affect the motion of photons ionic lattices affect electrons in solids. • The first commercial products involving 2-D periodic photonic crystals -photonic crystal fibers. Fig.6 Photonic crystals in butterfly wings 11 May 2015 13 Nanophotonics ANKIT PANDEY
Photonic crystals  Band gap forbids certain frequency range.  Enables to control light not possible with conventional optics.  Applications of photonic crystals • Nanoscopic lasers • Light emitting diodes • Photonic integrated circuits • RF-antennas, reflectors 11 May 2015 14ANKIT PANDEY
1.4 Nanoplasmonics: • A plasmon is a quantum of plasma oscillation • The resultant of the two forces (i.e., attractive driving force and repulsive restoring force) set up the longitudinal oscillations among the free electrons.[2] 11 May 2015 15 [2] A.K. Sharma, R. Jha, and B. Gupta, “Fiber-Optic Sensors Based on Surface Plasmon Resonance: A Comprehensive Review,” Sensors Journal, IEEE, vol. 7, no. 8, pp. 1118–1129, 2007. Fig. 7. Exponential decay of field intensity of surface plasmon mode in a metal and dielectric system. Nanophotonics ANKIT PANDEY
2. Silicon Photonic devices: Silicon photonics - silicon as an optical medium. Material benefits provided by silicon:[3]  Photonic: wide band infrared transparency  Electronic: low noise, high speed integrated circuits  Thermal: high heat conductance  Structural: rugged 3-D platforms and packages. 11 May 2015 16 [3]B. T. Smith, D. Feng, H. Lei, D. Zheng, J. Fong, and M. Asghari, “Fundamentals of Silicon Photonic Devices ( b ),” pp. 2–8, 2006 ANKIT PANDEY
 Silicon Photonics for Exascale Systems[4] • CMOS-compatible fabrication and compact integration within the computing/memory chips. • These photonic devices are implemented on a silicon on insulator (SOI) which can be integrated with a computing chip in the CMOS layer, on top of the metal stack. 11 May 2015 17 [4] D. Nikolova, R. Hendry, Q. Li, S. Member, D. Calhoun, and K. Bergman, “Silicon Photonics for Exascale Systems,” vol. 33, no. 3, pp. 547–562, 2015. ANKIT PANDEY
 Some of the photonic devices that are being used on silicon platform- • SiGe HBT(Heterojunction Bipolar Transistors) based photonic devices • Ge/GeSn hetero-phototransistors (HPT) on Si substrate 11 May 2015 18ANKIT PANDEY
SiGe HBT: • SiGe has a smaller band gap than Si. • Increasing Ge from emitter to collector creates a conduction band gradient that accelerates the transport of electrons injected from the emitter across the base. 11 May 2015 19 Fig.8 Band diagram of a graded base SiGe HBT and a comparatively constructed Si BJT ANKIT PANDEY
 Less potential barrier increased collector current enhanced gain  Silicon bipolar integrated circuits for10 Gb/s optical comm. systems  Research is underway on SiGe heterojunction bipolar circuits for 20 and 40 Gb/s systems 11 May 2015 20 improved high frequency performance ANKIT PANDEY
Ge/GeSn hetero-phototransistors on Si substrate:[5]  Si-based detectors cannot be used in the standard telecommunication windows around 1.55 µm as the cut-off wavelength of Si is 1.1 µm.  What has led to the fabrication of the GeSn-based photodetectors? • The alloy Ge1-ySny has a band gap lower than that of strained Ge . • Larger absorption coefficient in both the C and L bands. 11 May 2015 21 [5] Basu, R., Chakraborty, V., Mukhopadhyay, B., & Basu, P. K. (2014). Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μ m. Optical and Quantum Electronics, 47(2), 387–399. ANKIT PANDEY
 HPTs possess internal gain, but no excess noise, which is present in APDs due to the random avalanche multiplication process.  HPTs has been done with InGaAs/InP or GaAs/AlGaAs or using other III -V compound semiconductors and SiGe alloy. 11 May 2015 22ANKIT PANDEY
 Discussed main advancements and areas of photonic devices.  The field of Photonic devices is growing .  Despite significant breakthroughs, there are still unexplored areas.  Future of photonics devices- • E-paper for all • Solar panels widespread • Light emitting fabrics • Optical memory And Beyond…........... 11 May 2015 23ANKIT PANDEY
[1] F. Bonaccorso, Z. Sun, T. Hasan, and a. C. Ferrari, “Graphene Photonics and Optoelectronics,” vol. 622, no. August 2010, pp. 1–26, 2010. [2] A K Sharma, R. Jha, and B. Gupta, “Fiber-Optic Sensors Based on Surface Plasmon Resonance: A Comprehensive Review,” Sensors Journal, IEEE, vol. 7, no. 8, pp. 1118–1129, 2007. [3] B. T. Smith, D. Feng, H. Lei, D. Zheng, J. Fong, and M. Asghari, “Fundamentals of Silicon Photonic Devices ( b ),” pp. 2–8, 2006 [4] D. Nikolova, R. Hendry, Q. Li, S. Member, D. Calhoun, and K. Bergman, “Silicon Photonics for Exascale Systems,” vol. 33, no. 3, pp. 547–562, 2015. [5] Basu, R., Chakraborty, V., Mukhopadhyay, B., & Basu, P. K. (2014). Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μ m. Optical and Quantum Electronics, 47(2), 387–399. 11 May 2015 24ANKIT PANDEY
THANK YOU 11 May 2015 25ANKIT PANDEY

More Related Content

PHOTONIC DEVICES INTRODUCTION

  • 1. ANKIT KUMAR PANDEY ELECTRONICS & COMM. ENGG. NIT DELHI 11 May 2015 1ANKIT PANDEY
  • 2.  Introduction  Photonics areas  What are photonic devices?  What drives the application of photonic devices?  Latest Trends in Photonic Devices  Conclusions 11 May 2015 2ANKIT PANDEY
  • 3.  Optics: • Properties of light and its interaction with matter • Construction of instruments that use or detect it  Photonics: • Use of radiant energy (such as light): photon • Photonics - photon ↔ Electronics - electron 11 May 2015 3ANKIT PANDEY
  • 4.  Strength: Interdisciplinary nature  Examples: • Information Technology and Telecommunications • Health Care and Life Sciences – Biophotonics • Photonic Sensing and detection • Lighting, Energy, and Displays • In various manufacturing processes • Security and Defence 11 May 2015 4ANKIT PANDEY
  • 5.  Photonic devices are components for creating, manipulating, or detecting light  Includes: • laser diodes • LEDs • Solar and photovoltaic cells • displays and optical amplifiers.  Other examples include devices for: • Modulating a beam of light • Combining/separating light beams of different wavelength 11 May 2015 5ANKIT PANDEY
  • 6.  Bandwidth , fast data processing and transfer.  Contactless measuring characteristics.  Processing possibilities of materials.  Energy saving.  Cost and dimension reduction. 11 May 2015 6ANKIT PANDEY
  • 7. 1.Nanophotonics • Study of the behaviour of light on the nanometer scale • Interaction of nanometer-scale objects with light Ex; 4th century Roman glass cage cup(Lycurgus Cup). 11 May 2015 7 Fig.1 Lycurgus Cup ANKIT PANDEY
  • 8.  Natural examples of Nanophotonics- • ZnO nanoparticles in Peacock’s feathers • Photoreceptor rhodopsin Fig.2. ZnO nanoparticles in Peacock’s feathers Fig.3 Photoreceptor rhodopsin 11 May 2015 8ANKIT PANDEY
  • 9. 1.1 Graphene based photonic devices Graphene- a 2-D one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice. Fig.4. Graphene lattice 11 May 2015 9 Nanophotonics ANKIT PANDEY
  • 10.  Graphene Properties • High mobility • Optical transparency • Flexibility • Robustness and environmental stability.  Graphene based solar cells and light-emitting devices ,touch screens, photodetectors and ultrafast lasers are being developed.[1] 11 May 2015 10 [1] F. Bonaccorso, Z. Sun, T. Hasan, and a. C. Ferrari, “Graphene Photonics and Optoelectronics,” vol. 622, no. August 2010, pp. 1–26, 2010. Graphene based photonic devices ANKIT PANDEY
  • 11. 11 May 2015 11ANKIT PANDEY
  • 12. 1.2 Carbon nanotubes (CNT) based photonic devices-  CNTs - allotropes of carbon with a cylindrical nanostructure  Advantages of CNT-based photonics devices: • Ultrafast response • Robustness • Tunability of wavelength • Compatibility to fibers. Fig.5 Carbon Nanotube 11 May 2015 12 Nanophotonics ANKIT PANDEY
  • 13. 1.3 Photonic crystals • Periodic optical nanostructures • Affect the motion of photons ionic lattices affect electrons in solids. • The first commercial products involving 2-D periodic photonic crystals -photonic crystal fibers. Fig.6 Photonic crystals in butterfly wings 11 May 2015 13 Nanophotonics ANKIT PANDEY
  • 14. Photonic crystals  Band gap forbids certain frequency range.  Enables to control light not possible with conventional optics.  Applications of photonic crystals • Nanoscopic lasers • Light emitting diodes • Photonic integrated circuits • RF-antennas, reflectors 11 May 2015 14ANKIT PANDEY
  • 15. 1.4 Nanoplasmonics: • A plasmon is a quantum of plasma oscillation • The resultant of the two forces (i.e., attractive driving force and repulsive restoring force) set up the longitudinal oscillations among the free electrons.[2] 11 May 2015 15 [2] A.K. Sharma, R. Jha, and B. Gupta, “Fiber-Optic Sensors Based on Surface Plasmon Resonance: A Comprehensive Review,” Sensors Journal, IEEE, vol. 7, no. 8, pp. 1118–1129, 2007. Fig. 7. Exponential decay of field intensity of surface plasmon mode in a metal and dielectric system. Nanophotonics ANKIT PANDEY
  • 16. 2. Silicon Photonic devices: Silicon photonics - silicon as an optical medium. Material benefits provided by silicon:[3]  Photonic: wide band infrared transparency  Electronic: low noise, high speed integrated circuits  Thermal: high heat conductance  Structural: rugged 3-D platforms and packages. 11 May 2015 16 [3]B. T. Smith, D. Feng, H. Lei, D. Zheng, J. Fong, and M. Asghari, “Fundamentals of Silicon Photonic Devices ( b ),” pp. 2–8, 2006 ANKIT PANDEY
  • 17.  Silicon Photonics for Exascale Systems[4] • CMOS-compatible fabrication and compact integration within the computing/memory chips. • These photonic devices are implemented on a silicon on insulator (SOI) which can be integrated with a computing chip in the CMOS layer, on top of the metal stack. 11 May 2015 17 [4] D. Nikolova, R. Hendry, Q. Li, S. Member, D. Calhoun, and K. Bergman, “Silicon Photonics for Exascale Systems,” vol. 33, no. 3, pp. 547–562, 2015. ANKIT PANDEY
  • 18.  Some of the photonic devices that are being used on silicon platform- • SiGe HBT(Heterojunction Bipolar Transistors) based photonic devices • Ge/GeSn hetero-phototransistors (HPT) on Si substrate 11 May 2015 18ANKIT PANDEY
  • 19. SiGe HBT: • SiGe has a smaller band gap than Si. • Increasing Ge from emitter to collector creates a conduction band gradient that accelerates the transport of electrons injected from the emitter across the base. 11 May 2015 19 Fig.8 Band diagram of a graded base SiGe HBT and a comparatively constructed Si BJT ANKIT PANDEY
  • 20.  Less potential barrier increased collector current enhanced gain  Silicon bipolar integrated circuits for10 Gb/s optical comm. systems  Research is underway on SiGe heterojunction bipolar circuits for 20 and 40 Gb/s systems 11 May 2015 20 improved high frequency performance ANKIT PANDEY
  • 21. Ge/GeSn hetero-phototransistors on Si substrate:[5]  Si-based detectors cannot be used in the standard telecommunication windows around 1.55 µm as the cut-off wavelength of Si is 1.1 µm.  What has led to the fabrication of the GeSn-based photodetectors? • The alloy Ge1-ySny has a band gap lower than that of strained Ge . • Larger absorption coefficient in both the C and L bands. 11 May 2015 21 [5] Basu, R., Chakraborty, V., Mukhopadhyay, B., & Basu, P. K. (2014). Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μ m. Optical and Quantum Electronics, 47(2), 387–399. ANKIT PANDEY
  • 22.  HPTs possess internal gain, but no excess noise, which is present in APDs due to the random avalanche multiplication process.  HPTs has been done with InGaAs/InP or GaAs/AlGaAs or using other III -V compound semiconductors and SiGe alloy. 11 May 2015 22ANKIT PANDEY
  • 23.  Discussed main advancements and areas of photonic devices.  The field of Photonic devices is growing .  Despite significant breakthroughs, there are still unexplored areas.  Future of photonics devices- • E-paper for all • Solar panels widespread • Light emitting fabrics • Optical memory And Beyond…........... 11 May 2015 23ANKIT PANDEY
  • 24. [1] F. Bonaccorso, Z. Sun, T. Hasan, and a. C. Ferrari, “Graphene Photonics and Optoelectronics,” vol. 622, no. August 2010, pp. 1–26, 2010. [2] A K Sharma, R. Jha, and B. Gupta, “Fiber-Optic Sensors Based on Surface Plasmon Resonance: A Comprehensive Review,” Sensors Journal, IEEE, vol. 7, no. 8, pp. 1118–1129, 2007. [3] B. T. Smith, D. Feng, H. Lei, D. Zheng, J. Fong, and M. Asghari, “Fundamentals of Silicon Photonic Devices ( b ),” pp. 2–8, 2006 [4] D. Nikolova, R. Hendry, Q. Li, S. Member, D. Calhoun, and K. Bergman, “Silicon Photonics for Exascale Systems,” vol. 33, no. 3, pp. 547–562, 2015. [5] Basu, R., Chakraborty, V., Mukhopadhyay, B., & Basu, P. K. (2014). Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55 μ m. Optical and Quantum Electronics, 47(2), 387–399. 11 May 2015 24ANKIT PANDEY
  • 25. THANK YOU 11 May 2015 25ANKIT PANDEY