MEMS sensor generations represent the progress made in micro sensor technology and can be categorized as follows: 1st GenerationMEMS sensor element mostly based on a silicon structure, sometimes combined with analog amplification on a micro chip.2nd GenerationMEMS sensor element combined with analog amplification and analog-to-digital converter on one micro chip.3rd GenerationFusion of the sensor element with analog amplification, analog-to-digital converter and digital intelligence for linearization and temperature compensation on the same micro chip.4th GenerationMemory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation.
Property | Value |
---|---|
dbo:abstract |
|
dbo:wikiPageID |
|
dbo:wikiPageLength |
|
dbo:wikiPageRevisionID |
|
dbo:wikiPageWikiLink | |
dbp:wikiPageUsesTemplate | |
dcterms:subject | |
rdfs:comment |
|
rdfs:label |
|
owl:sameAs | |
prov:wasDerivedFrom | |
foaf:isPrimaryTopicOf | |
is dbo:wikiPageRedirects of | |
is dbo:wikiPageWikiLink of | |
is foaf:primaryTopic of |