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Tunnel FET-based ultra-low power, high-sensitivity UHF RFID rectifier

Published: 04 September 2013 Publication History

Abstract

Hetero-junction Tunnel FET (HTFET) for ultra-low power RF circuit design has been explored at the device and circuit level. In this paper, benchmarking and design insights for optimizing the performance of the TFET based differential drive rectifier is presented. Our evaluation of the HTFET based rectifier demonstrates its promise compared to the state-of-art passive RFIDs. With the 10-stage optimized TFET rectifier at 915 MHz, PCE of 98% with 0.5 nW power consumption, sensitivity of -24dBm for 9 μW PDC and sensitivity of -33dBm for 0.4μW PDC were achieved.

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Cited By

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  • (2015)A CNN-inspired mixed signal processor based on tunnel transistorsProceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition10.5555/2755753.2757079(1150-1155)Online publication date: 9-Mar-2015
  • (2013)Steep switching tunnel FETProceedings of the 2013 International Symposium on Low Power Electronics and Design10.5555/2648668.2648707(145-150)Online publication date: 4-Sep-2013

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cover image ACM Conferences
ISLPED '13: Proceedings of the 2013 International Symposium on Low Power Electronics and Design
September 2013
440 pages
ISBN:9781479912353

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IEEE Press

Publication History

Published: 04 September 2013

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Author Tags

  1. RF circuits
  2. energy scavenging
  3. rectifiers
  4. tunnel FETs

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Overall Acceptance Rate 398 of 1,159 submissions, 34%

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View all
  • (2015)A CNN-inspired mixed signal processor based on tunnel transistorsProceedings of the 2015 Design, Automation & Test in Europe Conference & Exhibition10.5555/2755753.2757079(1150-1155)Online publication date: 9-Mar-2015
  • (2013)Steep switching tunnel FETProceedings of the 2013 International Symposium on Low Power Electronics and Design10.5555/2648668.2648707(145-150)Online publication date: 4-Sep-2013

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