Soy Varghese

... The authors are with the Department of Electrical Engineering, Indian Institute of Technology (IIT)-Bombay, Mumbai 400076, India (e-mail: manojcr@ee.iitb.ac.in; rrao@ee.iitb.ac.in;chinu.mn@gmail.com). ... Press, 2004. [17] H. Zhao, N. Agrawal, R. Javier, SC Rustagi, M. Jurczak ...

In this paper, we have investigated the feasibility of imaging the mechanical behavior of poroelastic materials using axial strain elastography. Cylindrical samples obtained from poroelastic materials having different elastic and permeability properties were subjected to a constant compression force (a classical creep experiment), during which poroelastographic data were acquired. For comparison, we also tested a few gelatin phantoms and non-homogeneous poroelastic phantoms constructed by combining different poroelastic materials. From the acquired data, we generated time-dependent sequences of axial strain elastograms and effective Poisson's ratio elastograms, which were then used for generating axial strain and effective Poisson's ratio time-constant elastograms. Thereafter, the various poroelastographic images were analyzed to evaluate the presence of statistically significant differences among the two types of poroelastic samples and for image quality analysis. The results of this study demonstrate that it is technically feasible to use axial strain elastography to distinguish among homogeneous poroelastic materials characterized by different elastic and permeability properties. They also show that the use of axial strain elastography instead of effective Poisson's ratio elastography results in objectively higher quality poroelastograms of the temporal behavior of the poroelastic materials under loading. However, the use of effective Poisson's ratio elastography may in any case be required to verify that the temporal changes occurring in the axial strains of the homogeneous poroelastic samples are also accompanied by temporal changes of the effective Poisson's ratios and are therefore due to poroelastic behavior.

ABSTRACT We present a brief overview of negative bias temperature instability (NBTI) commonly observed for in p-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) when stressed with negative gate voltages at elevated temperatures and discuss the results of such stress on device and circuit performance and review interface traps and oxide charges, their origin, present understanding, and changes due to NBTI. Next we discuss some of the models that have been proposed for both NBTI degradation and recovery and p- versus n-MOSFETs. We also address the time and energy dependence effects of NBTI and crystal orientation. Finally we mention some aspect of circuit degradation. The general conclusion is that although we understand much about NBTI, several aspects are poorly understood. This may be due to a lack of a basic understanding or due to varying experimental data that are likely the result of sample preparation and measurement conditions.