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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0712.1638 (cond-mat)
[Submitted on 11 Dec 2007]

Title:Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

Authors:Enrico Prati, Marco Fanciulli, Alessandro Calderoni, Giorgio Ferrari, Marco Sampietro
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Abstract: Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.
Comments: 8 Figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:0712.1638 [cond-mat.mes-hall]
  (or arXiv:0712.1638v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0712.1638
Journal reference: E. Prati et al., Effect of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor field effect transistors, Journal of Applied Physics, 103, 10, 104502 - 104502-6 (2008)
Related DOI: https://doi.org/10.1063/1.2924407

Submission history

From: Enrico Prati [view email]
[v1] Tue, 11 Dec 2007 02:48:35 UTC (160 KB)
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