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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1009.3450 (cond-mat)
[Submitted on 17 Sep 2010 (v1), last revised 17 May 2011 (this version, v3)]

Title:Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Authors:T.J.B.M. Janssen, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, S. Kopylov, V. Fal'ko
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Abstract:We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 10^10 in the Hall resistance quantization measurements.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1009.3450 [cond-mat.mes-hall]
  (or arXiv:1009.3450v3 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1009.3450
Journal reference: Phys. Rev. B 83, 233402 (2011)
Related DOI: https://doi.org/10.1103/PhysRevB.83.233402

Submission history

From: Jan-Theodoor Janssen Dr [view email]
[v1] Fri, 17 Sep 2010 15:32:24 UTC (647 KB)
[v2] Mon, 20 Sep 2010 14:27:14 UTC (647 KB)
[v3] Tue, 17 May 2011 12:56:25 UTC (116 KB)
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