Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 21 Sep 2017 (v1), last revised 3 Feb 2018 (this version, v5)]
Title:Depletion-mode Quantum Dots in Intrinsic Silicon
View PDFAbstract:We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.
Submission history
From: Sergey Amitonov V [view email][v1] Thu, 21 Sep 2017 14:59:51 UTC (864 KB)
[v2] Wed, 27 Sep 2017 08:29:21 UTC (863 KB)
[v3] Fri, 6 Oct 2017 07:31:05 UTC (864 KB)
[v4] Wed, 10 Jan 2018 12:55:22 UTC (865 KB)
[v5] Sat, 3 Feb 2018 08:24:39 UTC (865 KB)
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