Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 3 May 2018 (v1), last revised 9 May 2018 (this version, v2)]
Title:Symmetry broken spin reorientation transition in epitaxial MgO/Fe/MgO layers with competing anisotropies
View PDFAbstract:The observation of perpendicular magnetic anisotropy (PMA) at MgO/Fe interfaces boosted the development of spintronic devices based on ultrathin ferromagnetic layers. Yet, magnetization reversal in the standard magnetic tunnel junctions (MTJs) with competing PMA and in-plane anisotropies remains unclear. Here we report on the field induced nonvolatile broken symmetry magnetization reorientation transition from the in-plane to the perpendicular (out of plane) state at temperatures below 50K. The samples were 10 nm thick Fe in MgO/Fe(100)/MgO as stacking components of V/MgO/Fe/MgO/Fe/Co double barrier MTJs. Micromagnetic simulations with PMA and different second order anisotropies at the opposite Fe/MgO interfaces qualitatively reproduce the observed broken symmetry spin reorientation transition. Our findings open the possibilities to develop multistate epitaxial spintronics based on competing magnetic anisotropies.
Submission history
From: Isidoro Martínez [view email][v1] Thu, 3 May 2018 13:40:26 UTC (856 KB)
[v2] Wed, 9 May 2018 08:08:51 UTC (856 KB)
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