Condensed Matter > Strongly Correlated Electrons
[Submitted on 22 May 2018 (v1), last revised 29 Aug 2018 (this version, v2)]
Title:Structural properties and anisotropic electronic transport in SrIrO3 films
View PDFAbstract:Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like orthorhombic structure. However, film deposition on cubic (001) SrTiO3 induces a twinned growth of SIO. Resistance measurements on the SIO films reveal only weak temperature dependence, where the resistance R increases with decreasing temperature T. Hall measurements show dominant electron-like transport throughout the temperature range from 2 K to 300 K. At 2 K, the electron concentration and resistivity for SIO on STO amount to ne = 1.4*10^20 cm-3 and 1 mohmcm. Interestingly, the film resistance of untwinned SIO on DSO along the [1-10] and the [001] direction differs by up to 25% indicating pronounced anisotropic electronic transport. The anisotropy of the resistance increases with decreasing T and displays a distinct maximum around 86 K. The specific T-dependence is similar to that of the structural anisotropy sqrt(a2+b2)/c of bulk SIO. Therefore, anisotropic electronic transport in SIO is very likely induced by the orthorhombic distortion. Consequently, for twinned SIO films on STO anisotropy vanishes nearly completely. The experimental results show that structural changes are very likely responsible for the observed anisotropic electronic transport. The strong sensitivity of the electronic transport in SIO films may be explained in terms of the narrow electron-like bands in SIO caused by spin-orbit-coupling and orthorhombic distortion.
Submission history
From: Dirk Fuchs [view email][v1] Tue, 22 May 2018 09:49:16 UTC (1,343 KB)
[v2] Wed, 29 Aug 2018 15:41:46 UTC (1,416 KB)
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