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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1807.02539 (cond-mat)
[Submitted on 6 Jul 2018]

Title:Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene

Authors:Patrick C. Mende, Jun Li, Randall M. Feenstra
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Abstract:Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer size grains with a preferred orientation of 30 degrees relative to the surface graphene. Low-energy electron microscopy is employed to provide definitive signatures of the number and composition of two-dimensional (2D) planes across the surface. These grains are found to form by substitution for the surface graphene, with the C atoms produced by this substitution then being incorporated below the h-BN (at the interface between the existing graphene and the SiC) to form a new graphene plane.
Comments: 9 pages (with 3 figures), plus 9 pages of Supplementary Material (with 7 figures)
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1807.02539 [cond-mat.mes-hall]
  (or arXiv:1807.02539v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1807.02539
Journal reference: Appl. Phys. Lett. 113, 031605 (2018)
Related DOI: https://doi.org/10.1063/1.5039823

Submission history

From: Randall Feenstra [view email]
[v1] Fri, 6 Jul 2018 18:33:59 UTC (1,646 KB)
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