Condensed Matter > Materials Science
[Submitted on 21 Sep 2018 (v1), last revised 7 Sep 2020 (this version, v2)]
Title:Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
View PDFAbstract:We report the use of a surfactant molecule during the epitaxy of graphene on SiC(0001) that leads to the growth in an unconventional orientation, namely $R0^\circ$ rotation with respect to the SiC lattice. It yields a very high-quality single-layer graphene with a uniform orientation with respect to the substrate, on the wafer scale. We find an increased quality and homogeneity compared to the approach based on the use of a pre-oriented template to induce the unconventional orientation. Using spot profile analysis low energy electron diffraction, angle-resolved photoelectron spectroscopy, and the normal incidence x-ray standing wave technique, we assess the crystalline quality and coverage of the graphene layer. Combined with the presence of a covalently-bound graphene layer in the conventional orientation underneath, our surfactant-mediated growth offers an ideal platform to prepare epitaxial twisted bilayer graphene via intercalation.
Submission history
From: François C. Bocquet [view email][v1] Fri, 21 Sep 2018 06:24:28 UTC (1,287 KB)
[v2] Mon, 7 Sep 2020 05:30:18 UTC (504 KB)
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