Physics > Applied Physics
[Submitted on 20 Nov 2020 (v1), last revised 6 Apr 2021 (this version, v2)]
Title:Low microwave loss in deposited Si and Ge thin-film dielectrics at single-photon power and low temperatures
View PDFAbstract:Our study shows that deposited Ge and Si dielectric thin-films can exhibit low microwave losses at near single-photon powers and sub-Kelvin temperatures ($\approx$40 mK). This low loss enables their use in a wide range of devices, including low-loss coplanar, microstrip, and stripline resonators, as well as layers for device isolation, inter-wiring dielectrics, and passivation in microwave and Josephson junction circuit fabrication. We use coplanar microwave resonator structures with narrow trace widths of 2-16 $\mu \textrm{m}$ to maximize the sensitivity of loss tangent measurements to the interface and properties of the deposited dielectrics, rather than to optimize the quality factor. In this configuration, thermally-evaporated $\approx 1 \mu \textrm{m}$ thick amorphous germanium (a-Ge) films deposited on Si (100) have a single photon loss tangent of $1-2\times10^{-6}$ and, $9 \mu \textrm{m}$-thick chemical vapor deposited (CVD) homoepitaxial Si has a single photon loss tangent of $0.6-2\times 10^{-5}$. Interface contamination limits the loss in these devices.
Submission history
From: Daniel Queen [view email][v1] Fri, 20 Nov 2020 00:13:31 UTC (545 KB)
[v2] Tue, 6 Apr 2021 15:10:38 UTC (667 KB)
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