Physics > Applied Physics
[Submitted on 5 Feb 2022]
Title:Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface
View PDFAbstract:Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.
Current browse context:
physics.app-ph
References & Citations
Bookmark
Bibliographic and Citation Tools
Bibliographic Explorer (What is the Explorer?)
Connected Papers (What is Connected Papers?)
Litmaps (What is Litmaps?)
scite Smart Citations (What are Smart Citations?)
Code, Data and Media Associated with this Article
alphaXiv (What is alphaXiv?)
CatalyzeX Code Finder for Papers (What is CatalyzeX?)
DagsHub (What is DagsHub?)
Gotit.pub (What is GotitPub?)
Hugging Face (What is Huggingface?)
Papers with Code (What is Papers with Code?)
ScienceCast (What is ScienceCast?)
Demos
Recommenders and Search Tools
Influence Flower (What are Influence Flowers?)
CORE Recommender (What is CORE?)
arXivLabs: experimental projects with community collaborators
arXivLabs is a framework that allows collaborators to develop and share new arXiv features directly on our website.
Both individuals and organizations that work with arXivLabs have embraced and accepted our values of openness, community, excellence, and user data privacy. arXiv is committed to these values and only works with partners that adhere to them.
Have an idea for a project that will add value for arXiv's community? Learn more about arXivLabs.