Physics > Applied Physics
[Submitted on 23 Feb 2024]
Title:The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET
View PDFAbstract:The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross-section of the channel is significantly lower than that for the transistor with a rectangular cross-section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET.
Submission history
From: Makhkam Khalilloev [view email][v1] Fri, 23 Feb 2024 08:15:00 UTC (290 KB)
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