Physics > Applied Physics
[Submitted on 24 Jul 2024]
Title:Si/AlN p-n heterojunction interfaced with ultrathin SiO2
View PDFAbstract:Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.2 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+Si/n-AlN/n+AlGaN heterojunction structure by following the semiconductor grafting technique. High-resolution X-ray diffraction (HR-XRD) confirmed the high crystalline quality of the AlN/AlGaN layers, with a full width at half maximum (FWHM) of 0.16 degrees for the AlGaN (0002) peak. Atomic force microscopy (AFM) analysis revealed that the AlN surface exhibited a smooth topography with a roughness of 1.9 nm. Furthermore, the transferred Si surface demonstrated an even finer smoothness, with a roughness of 0.545 nm. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 3.63 eV and a conduction band offset of 1.32 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3e4, with a turn-on voltage of 3.9 V, indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.
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