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Microwave spectroscopic studies of the bilayer electron solid states at low Landau filling in a wide quantum well
Authors:
A. T. Hatke,
Y. Liu,
L. W. Engel,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
At the low Landau filling factor $(ν)$ termination of the fractional quantum Hall effect (FQHE) series, two-dimensional electron systems (2DESs) exhibit an insulating phase that is understood as a form of pinned Wigner solid. Here we use microwave spectroscopy to probe the transition to the insulator for a wide quantum well (WQW) sample that can support single-layer or bilayer states depending on…
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At the low Landau filling factor $(ν)$ termination of the fractional quantum Hall effect (FQHE) series, two-dimensional electron systems (2DESs) exhibit an insulating phase that is understood as a form of pinned Wigner solid. Here we use microwave spectroscopy to probe the transition to the insulator for a wide quantum well (WQW) sample that can support single-layer or bilayer states depending on its overall carrier density, $n$. We find the insulator exhibits a resonance, which is characteristic of a bilayer solid. The resonance also reveals a pair of transitions within the solid, which are not accessible to dc transport measurements. As $n$ is biased deeper into the bilayer solid regime, the resonance grows in specific intensity, and the transitions within the insulator disappear. These behaviors are suggestive of a picture of the insulating phase as an emulsion of liquid and solid components.
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Submitted 14 November, 2014;
originally announced November 2014.
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Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements
Authors:
D. Kamburov,
M. A. Mueed,
I. Jo,
Yang Liu,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. J. D. Lee
Abstract:
We report ballistic transport commensurability minima in the magnetoresistance of $ν=3/2$ composite fermions (CFs). The CFs are formed in high-quality two-dimensional electron systems confined to wide GaAs quantum wells and subjected to an in-plane, unidirectional periodic potential modulation. We observe a slight asymmetry of the CF commensurability positions with respect to $ν=3/2$, which we exp…
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We report ballistic transport commensurability minima in the magnetoresistance of $ν=3/2$ composite fermions (CFs). The CFs are formed in high-quality two-dimensional electron systems confined to wide GaAs quantum wells and subjected to an in-plane, unidirectional periodic potential modulation. We observe a slight asymmetry of the CF commensurability positions with respect to $ν=3/2$, which we explain quantitatively by comparing three CF density models and concluding that the $ν=3/2$ CFs are likely formed by the minority carriers in the upper energy spin state of the lowest Landau level. Our data also allow us to probe the shape and size of the CF Fermi contour. At a fixed electron density of $\simeq 1.8 \times 10^{11}$ cm$^{-2}$, as the quantum well width increases from 30 to 60 nm, the CFs show increasing spin-polarization. We attribute this to the enhancement of the Zeeman energy relative to the Coulomb energy in wider wells where the latter is softened because of the larger electron layer thickness. The application of an additional parallel magnetic field ($B_{||}$) leads to a significant distortion of the CF Fermi contour as $B_{||}$ couples to the CFs' out-of-plane orbital motion. The distortion is much more severe compared to the $ν=1/2$ CF case at comparable $B_{||}$. Moreover, the applied $B_{||}$ further spin-polarizes the $ν=3/2$ CFs as deduced from the positions of the commensurability minima.
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Submitted 11 November, 2014;
originally announced November 2014.
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$ν=1/2$ Fractional Quantum Hall Effect in Tilted Magnetic Fields
Authors:
Sukret Hasdemir,
Yang Liu,
H. Deng,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $ν=1/2$ as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong $ν=1/2$ fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds thi…
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Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $ν=1/2$ as we tilt the sample in the magnetic field. Starting with a compressible state at zero tilt angle, a strong $ν=1/2$ fractional quantum Hall state appears at intermediate angles. At higher angles an insulating phase surrounds this state and eventually engulfs it at the highest angles. This evolution occurs because the parallel component of the field renders the charge distribution increasingly bilayer-like.
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Submitted 21 October, 2014;
originally announced October 2014.
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Composite Fermions Waltz to the Tune of a Wigner Crystal
Authors:
Yang Liu,
H. Deng,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
When the kinetic energy of a collection of interacting two-dimensional (2D) electrons is quenched at very high magnetic fields so that the Coulomb repulsion dominates, the electrons are expected to condense into an ordered array, forming a quantum Wigner crystal (WC). Although this exotic state has long been suspected in high-mobility 2D electron systems at very low Landau level fillings ($ν<<1$),…
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When the kinetic energy of a collection of interacting two-dimensional (2D) electrons is quenched at very high magnetic fields so that the Coulomb repulsion dominates, the electrons are expected to condense into an ordered array, forming a quantum Wigner crystal (WC). Although this exotic state has long been suspected in high-mobility 2D electron systems at very low Landau level fillings ($ν<<1$), its direct observation has been elusive. Here we present a new technique and experimental results that directly probe the magnetic-field-induced WC. We measure the magneto-resistance of a bilayer electron system with unequal layer densities at high magnetic fields. One layer has a very low density and is in the WC regime ($ν<<1$), while the other ("probe") layer is near $ν=1/2$ and hosts a sea of composite fermions, quasi-particles formed by attaching two flux-quanta to each interacting electron. The composite fermions feel the periodic electric potential of the WC in the other layer and exhibit magneto-resistance maxima whenever their cyclotron orbit encircles certain integer number of the WC lattice points. The positions of the maxima reveal that the WC has a triangular lattice and yield a direct measure of its lattice constant. Our results provide a striking example of how one can probe an exotic many-body state of 2D electrons using equally exotic quasi-particles of another many-body state.
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Submitted 1 June, 2016; v1 submitted 13 October, 2014;
originally announced October 2014.
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Fractional Quantum Hall Effect and Wigner Crystal of Two-Flux Composite Fermions
Authors:
Yang Liu,
D. Kamburov,
S. Hasdemir,
M. Shayegan,
L. N. Pfeifer,
K. W. West,
K. W. Baldwin
Abstract:
In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near filling factors $ν=3/4$ and 5/4. The data reveal that these are spin-polarization transitions of interacting two-flux composite Fermions, which form their own FQHSs…
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In two-dimensional electron systems confined to GaAs quantum wells, as a function of either tilting the sample in magnetic field or increasing density, we observe multiple transitions of the fractional quantum Hall states (FQHSs) near filling factors $ν=3/4$ and 5/4. The data reveal that these are spin-polarization transitions of interacting two-flux composite Fermions, which form their own FQHSs at these fillings. The fact that the reentrant integer quantum Hall effect near $ν=4/5$ always develops following the transition to full spin polarization of the $ν=4/5$ FQHS strongly links the reentrant phase to a pinned \emph{ferromagnetic} Wigner crystal of two-flux composite Fermions.
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Submitted 29 July, 2014;
originally announced July 2014.
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Spin-Polarization of Composite Fermions and Particle-Hole Symmetry Breaking
Authors:
Yang Liu,
S. Hasdemir,
A. Wójs,
J. K. Jain,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
We study the critical spin-polarization energy ($α_{\rm C}$) above which fractional quantum Hall states in two-dimensional electron systems confined to symmetric GaAs quantum wells become fully spin-polarized. We find a significant decrease of $α_{\rm C}$ as we increase the well-width. In systems with comparable electron layer thickness, $α_{\rm C}$ for fractional states near Landau level filling…
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We study the critical spin-polarization energy ($α_{\rm C}$) above which fractional quantum Hall states in two-dimensional electron systems confined to symmetric GaAs quantum wells become fully spin-polarized. We find a significant decrease of $α_{\rm C}$ as we increase the well-width. In systems with comparable electron layer thickness, $α_{\rm C}$ for fractional states near Landau level filling $ν=3/2$ is about twice larger than those near $ν=1/2$, suggesting a broken particle-hole symmetry. Theoretical calculations, which incorporate Landau level mixing through an effective three-body interaction, and finite layer thickness, capture certain qualitative features of the experimental results.
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Submitted 9 June, 2014;
originally announced June 2014.
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What Determines the Fermi Wave Vector of Composite Fermions?
Authors:
D. Kamburov,
Yang Liu,
M. A. Mueed,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
Composite fermions (CFs), exotic particles formed by pairing an even number of flux quanta to each electron, provide a fascinating description of phenomena exhibited by interacting two-dimensional electrons at high magnetic fields. At and near Landau level filling $ν=1/2$, CFs occupy a Fermi sea and exhibit commensurability effects when subjected to a periodic potential modulation. We observe a pr…
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Composite fermions (CFs), exotic particles formed by pairing an even number of flux quanta to each electron, provide a fascinating description of phenomena exhibited by interacting two-dimensional electrons at high magnetic fields. At and near Landau level filling $ν=1/2$, CFs occupy a Fermi sea and exhibit commensurability effects when subjected to a periodic potential modulation. We observe a pronounced asymmetry in the magnetic field positions of the commensurability resistance minima of CFs with respect to the field at $ν=1/2$. This unexpected asymmetry is quantitatively consistent with the CFs' Fermi wave vector being determined by the \textit{minority} carriers in the lowest Landau level. Our data indicate a breaking of the particle-hole symmetry for CFs near $ν=1/2$.
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Submitted 9 June, 2014;
originally announced June 2014.
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Competing quantum Hall phases in the second Landau level in low density limit
Authors:
W. Pan,
A. Serafin,
J. S. Xia,
L. Yin,
N. S. Sullivan,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer,
D. C. Tsui
Abstract:
We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at ν=7/2 in the second Landau level. We believe that the anisotropy is due to the large Landau level mixing effect in this sample. In sample B of density 4.1x10^10 cm^-2, strong 8/3, 5/2, and 7/3 fract…
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We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at ν=7/2 in the second Landau level. We believe that the anisotropy is due to the large Landau level mixing effect in this sample. In sample B of density 4.1x10^10 cm^-2, strong 8/3, 5/2, and 7/3 fractional quantum Hall states were observed. Furthermore, our energy gap data suggest that, similar to the 8/3 state, the 5/2 state may also be spin unpolarized in the low density limit. The results from both samples show that the strong electron-electron interactions and a large Landau level mixing effect play an import role in the competing ground states in the second landau level.
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Submitted 4 June, 2014; v1 submitted 23 May, 2014;
originally announced May 2014.
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Even-denominator Fractional Quantum Hall Effect at a Landau Level Crossing
Authors:
Yang Liu,
S. Hasdemir,
D. Kamburov,
A. L. Graninger,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler
Abstract:
The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb interaction. It occurs when the filling factor ($ν$) of the quantized Landau levels (LLs) is a fraction which, with very few exceptions, has an odd denominator. In 2D s…
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The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb interaction. It occurs when the filling factor ($ν$) of the quantized Landau levels (LLs) is a fraction which, with very few exceptions, has an odd denominator. In 2D systems with additional degrees of freedom it is possible to cause a crossing of the LLs at the Fermi level. At and near these crossings, the FQHE states are often weakened or destroyed. Here we report the observation of an unusual crossing of the two \emph{lowest-energy} LLs in high-mobility GaAs 2D $hole$ systems which brings to life a new \emph{even-denominator} FQHE at $ν=1/2$.
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Submitted 30 January, 2014;
originally announced January 2014.
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Fractional Quantum Hall Effect at $ν=1/2$ in Hole Systems Confined to GaAs Quantum Wells
Authors:
Yang Liu,
A. L. Graninger,
S. Hasdemir,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler
Abstract:
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ν=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-…
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We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions. The $ν=1/2$ FQHE is stable when the charge distribution is symmetric and only in a range of intermediate densities, qualitatively similar to what is seen in two-dimensional electron systems confined to approximately twice wider GaAs quantum wells. Despite the complexity of the hole Landau level structure, originating from the coexistence and mixing of the heavy- and light-hole states, we find the hole $ν=1/2$ FQHE to be consistent with a two-component, Halperin-Laughlin ($Ψ_{331}$) state.
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Submitted 29 January, 2014;
originally announced January 2014.
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Microwave spectroscopic observation of distinct electron solid phases in wide quantum wells
Authors:
A. T. Hatke,
Yang Liu,
B. A. Magill,
B. H. Moon,
L. W. Engel,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
In high magnetic fields ($B$), two dimensional electron systems (2DESs) can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect (FQHE), as well as solid phases with broken spatial symmetry and crystalline order. Solids can occ…
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In high magnetic fields ($B$), two dimensional electron systems (2DESs) can form a number of phases in which interelectron repulsion plays the central role, since the kinetic energy is frozen out by Landau quantization. These phases include the well-known liquids of the fractional quantum Hall effect (FQHE), as well as solid phases with broken spatial symmetry and crystalline order. Solids can occur at the low Landau filling ($ν$) termination of the FQHE series, but also within integer quantum Hall effects (IQHEs). Here, we present microwave spectroscopy studies of wide quantum wells (WQWs). The spectra clearly reveal two distinct solid phases, hidden within what in dc transport would be the zero diagonal conductivity of an integer quantum Hall effect state. Explanation of these solids is not possible with the simple picture of a Wigner solid (WS) of ordinary (quasi) electrons or holes.
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Submitted 29 December, 2013;
originally announced December 2013.
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Fermi Contour Anisotropy of GaAs Electron-Flux Composite Fermions in Parallel Magnetic Fields
Authors:
D. Kamburov,
M. A. Mueed,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. J. D. Lee,
R. Winkler
Abstract:
In high-quality two-dimensional electrons confined to GaAs quantum wells, near Landau level filling factors $ν=$ 1/2 and 1/4, we observe signatures of the commensurability of the electron-flux composite fermion cyclotron orbits with a unidirectional periodic density modulation. Focusing on the data near $ν=1/2$, we directly and quantitatively probe the shape of the composite fermions' cyclotron or…
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In high-quality two-dimensional electrons confined to GaAs quantum wells, near Landau level filling factors $ν=$ 1/2 and 1/4, we observe signatures of the commensurability of the electron-flux composite fermion cyclotron orbits with a unidirectional periodic density modulation. Focusing on the data near $ν=1/2$, we directly and quantitatively probe the shape of the composite fermions' cyclotron orbit, and therefore their Fermi contour, as a function of magnetic field ($B_{||}$) applied parallel to the sample plane. The composite fermion Fermi contour becomes severely distorted with increasing $B_{||}$ and appears to be elliptical, in sharp contrast to the electron Fermi contour which splits as the system becomes bilayer-like at high $B_{||}$. We present a simple, qualitative model to interpret our findings.
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Submitted 7 August, 2013;
originally announced August 2013.
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Phase Diagrams for the $ν$ = 1/2 Fractional Quantum Hall Effect in Electron Systems Confined to Symmetric, Wide GaAs Quantum Wells
Authors:
J. Shabani,
Y. Liu,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The quasi-two-dimensional electron systems we study are confined to GaAs quantum wells with widths $W$ ranging from 41 to 96 nm and have variable densities in the ran…
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We report an experimental investigation of fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $ν$ = 1/2 in very high quality wide GaAs quantum wells, and at very high magnetic fields up to 45 T. The quasi-two-dimensional electron systems we study are confined to GaAs quantum wells with widths $W$ ranging from 41 to 96 nm and have variable densities in the range of $\simeq 4 \times 10^{11}$ to $\simeq 4 \times 10^{10}$ cm$^{-2}$. We present several experimental phase diagrams for the stability of the $ν=1/2$ FQHE in these quantum wells. In general, for a given $W$, the 1/2 FQHE is stable in a limited range of intermediate densities where it has a bilayer-like charge distribution; it makes a transition to a compressible phase at low densities and to an insulating phase at high densities. The densities at which the $ν=1/2$ FQHE is stable are larger for narrower quantum wells. Moreover, even a slight charge distribution asymmetry destabilizes the $ν=1/2$ FQHE and turns the electron system into a compressible state. We also present a plot of the symmetric-to-antisymmetric subband separation ($Δ_{SAS}$), which characterizes the inter-layer tunneling, vs density for various $W$. This plot reveals that $Δ_{SAS}$ at the boundary between the compressible and FQHE phases increases \textit{linearly} with density for all the samples. Finally, we summarize the experimental data in a diagram that takes into account the relative strengths of the inter-layer and intra-layer Coulomb interactions and $Δ_{SAS}$. We conclude that, consistent with the conclusions of some of the previous studies, the $ν=1/2$ FQHE observed in wide GaAs quantum wells with symmetric charge distribution is stabilized by a delicate balance between the inter-layer and intra-layer interactions, and is very likely described by a two-component ($Ψ_{311}$) state.
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Submitted 29 November, 2013; v1 submitted 22 June, 2013;
originally announced June 2013.
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Anisotropic Fermi Contour of (001) GaAs Electrons in Parallel Magnetic Fields
Authors:
D. Kamburov,
M. A. Mueed,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. J. D. Lee,
R. Winkler
Abstract:
We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contour…
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We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semi-quantitatively with the results of parameter-free calculations of the Fermi contours but there are significant discrepancies.
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Submitted 7 August, 2013; v1 submitted 14 June, 2013;
originally announced June 2013.
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Evidence for a $ν=5/2$ Fractional Quantum Hall Nematic State in Parallel Magnetic Fields
Authors:
Yang Liu,
S. Hasdemir,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
We report magneto-transport measurements for the fractional quantum Hall state at filling factor $ν=$ 5/2 as a function of applied parallel magnetic field ($B_{||}$). As $B_{||}$ is increased, the 5/2 state becomes increasingly anisotropic, with the in-plane resistance along the direction of $B_{||}$ becoming more than 30 times larger than in the perpendicular direction. Remarkably, the resistance…
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We report magneto-transport measurements for the fractional quantum Hall state at filling factor $ν=$ 5/2 as a function of applied parallel magnetic field ($B_{||}$). As $B_{||}$ is increased, the 5/2 state becomes increasingly anisotropic, with the in-plane resistance along the direction of $B_{||}$ becoming more than 30 times larger than in the perpendicular direction. Remarkably, the resistance anisotropy ratio remains constant over a relatively large temperature range, yielding an energy gap which is the same for both directions. Our data are qualitatively consistent with a fractional quantum Hall \textit{nematic} phase.
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Submitted 25 February, 2013;
originally announced February 2013.
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Composite Fermions with Tunable Fermi Contour Anisotropy
Authors:
D. Kamburov,
Yang Liu,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
The composite fermion formalism elegantly describes some of the most fascinating behaviours of interacting two-dimensional carriers at low temperatures and in strong perpendicular magnetic fields. In this framework, carriers minimize their energy by attaching two flux quanta and forming new quasi-particles, the so-called composite fermions. Thanks to the flux attachment, when a Landau level is hal…
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The composite fermion formalism elegantly describes some of the most fascinating behaviours of interacting two-dimensional carriers at low temperatures and in strong perpendicular magnetic fields. In this framework, carriers minimize their energy by attaching two flux quanta and forming new quasi-particles, the so-called composite fermions. Thanks to the flux attachment, when a Landau level is half-filled, the composite fermions feel a vanishing effective magnetic field and possess a Fermi surface with a well-defined Fermi contour. Our measurements in a high-quality two-dimensional hole system confined to a GaAs quantum well demonstrate that a parallel magnetic field can significantly distort the hole-flux composite fermion Fermi contour.
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Submitted 14 June, 2013; v1 submitted 11 February, 2013;
originally announced February 2013.
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Anisotropic Fermi Contour of (001) GaAs Holes in Parallel Magnetic Fields
Authors:
D. Kamburov,
M. Shayegan,
R. Winkler,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transf…
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We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semi-quantitative agreement with the results of parameter-free calculations of the energy bands.
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Submitted 5 October, 2012;
originally announced October 2012.
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Hole-flux Composite Fermion Commensurability Oscillations
Authors:
D. Kamburov,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
We report the observation of commensurability oscillations of hole-flux composite fermions near filling factor $ν=1/2$ in a high-mobility two-dimensional hole system confined to a GaAs quantum well, and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The oscillations, which are consistent with ballistic transport of fully spin-polarized composite fermions in a we…
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We report the observation of commensurability oscillations of hole-flux composite fermions near filling factor $ν=1/2$ in a high-mobility two-dimensional hole system confined to a GaAs quantum well, and subjected to a weak, strain-induced, unidirectional periodic potential modulation. The oscillations, which are consistent with ballistic transport of fully spin-polarized composite fermions in a weak periodic effective magnetic field, are surprisingly strong and exhibit up to third-order minima. We extract a ballistic mean-free-path of about 0.2 $μ$m for the hole-flux composite fermions.
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Submitted 2 August, 2012;
originally announced August 2012.
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Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice
Authors:
D. Kamburov,
H. Shapourian,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler
Abstract:
We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we dedu…
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We report the observation of ballistic commensurability oscillations and positive magnetoresistance in a high-mobility, (001) GaAs two-dimensional hole system with a unidirectional, surface-strain-induced, periodic potential modulation. The positions of the resistivity minima agree well with the electrostatic commensurability condition. From an analysis of the amplitude of the oscillations we deduce a ballistic scattering time and an effective magnitude for the induced periodic potential seen by the two-dimensional holes.
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Submitted 2 August, 2012;
originally announced August 2012.
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Spin and charge distribution symmetry dependence of stripe phases in two-dimensional electron systems confined to wide quantum wells
Authors:
Yang Liu,
D. Kamburov,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
Measurements in clean two-dimensional electron systems confined to wide GaAs quantum wells in which two electric subbands are occupied reveal an unexpected rotation of the orientation of the stripe phase observed at a half-filled Landau level. Remarkably, the reorientation is sensitive to the spin of the half-filled Landau level and the symmetry of the charge distribution in the quantum well.
Measurements in clean two-dimensional electron systems confined to wide GaAs quantum wells in which two electric subbands are occupied reveal an unexpected rotation of the orientation of the stripe phase observed at a half-filled Landau level. Remarkably, the reorientation is sensitive to the spin of the half-filled Landau level and the symmetry of the charge distribution in the quantum well.
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Submitted 18 July, 2012;
originally announced July 2012.
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Spin Polarization of the 12/5 Fractional Quantum Hall Effect
Authors:
Chi Zhang,
Chao Huan,
J. S. Xia,
N. S. Sullivan,
W. Pan,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer,
D. C. Tsui
Abstract:
We have carried out tilt magnetic field (B) studies of the ν=12/5 fractional quantum Hall state in an ultra-high quality GaAs quantum well specimen. Its diagonal magneto-resistance Rxx shows a non-monotonic dependence on tilt angle (θ). It first increases sharply with increasing θ, reaches a maximal value of ~ 70 ohms at θ~ 14^o, and then decreases at higher tilt angles. Correlated with this depen…
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We have carried out tilt magnetic field (B) studies of the ν=12/5 fractional quantum Hall state in an ultra-high quality GaAs quantum well specimen. Its diagonal magneto-resistance Rxx shows a non-monotonic dependence on tilt angle (θ). It first increases sharply with increasing θ, reaches a maximal value of ~ 70 ohms at θ~ 14^o, and then decreases at higher tilt angles. Correlated with this dependence of Rxx on θ, the 12/5 activation energy (Δ_{12/5}) also shows a non-monotonic tilt dependence. Δ_{12/5} first decreases with increasing θ. Around θ= 14^{o}, Δ_{12/5} disappears as Rxx becomes non-activated. With further increasing tilt angles, Δ_{12/5} reemerges and increases with θ. This tilt B dependence at ν=12/5 is strikingly different from that of the well-documented 5/2 state and calls for more investigations on the nature of its ground state.
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Submitted 2 April, 2012;
originally announced April 2012.
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Spin Transition in the ν=8/3 Fractional Quantum Hall Effect
Authors:
W. Pan,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer,
D. C. Tsui
Abstract:
We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings ν=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5 x 10^{11} to 3 x 10^{11} cm^{-2}, the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. Fo…
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We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings ν=8/3 and 7/3 in a series of high quality quantum wells. In the density range from 0.5 x 10^{11} to 3 x 10^{11} cm^{-2}, the 7/3 energy gap increases monotonically with increasing density, supporting its ground state being spin polarized. For the 8/3 state, however, its energy gap first decreases with increasing density, almost vanishes at n ~ 0.8 x 10^{11} cm^{-2}, and then turns around and increases with increasing density, clearly demonstrating a spin transition.
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Submitted 2 April, 2012;
originally announced April 2012.
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Braiding of Abelian and Non-Abelian Anyons in the Fractional Quantum Hall Effect
Authors:
Sanghun An,
P. Jiang,
H. Choi,
W. Kang,
S. H. Simon,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
In this paper, we report on the study of Abelian and non-Abelian statistics through Fabry-Perot interferometry of fractional quantum Hall (FQH) systems. Our detection of phase slips in quantum interference experiments demonstrates a powerful, new way of detecting braiding of anyons. We confirm the Abelian anyonic braiding statistics in the $ν= 7/3$ FQH state through detection of the predicted stat…
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In this paper, we report on the study of Abelian and non-Abelian statistics through Fabry-Perot interferometry of fractional quantum Hall (FQH) systems. Our detection of phase slips in quantum interference experiments demonstrates a powerful, new way of detecting braiding of anyons. We confirm the Abelian anyonic braiding statistics in the $ν= 7/3$ FQH state through detection of the predicted statistical phase angle of $2π/3$, consistent with a change of the anyonic particle number by one. The $ν= 5/2$ FQH state is theoretically believed to harbor non-Abelian anyons which are Majorana, meaning that each pair of quasiparticles contain a neutral fermion orbital which can be occupied or unoccupied and hence can act as a qubit. In this case our observed statistical phase slips agree with a theoretical model where the Majoranas are strongly coupled to each other, and strongly coupled to the edge modes of the interferometer. In particular, an observed phase slip of approximately $π$ is interpreted as a sudden flip of a qubit, or entry of a neutral fermion into the interferometer. Our results provide compelling support for the existence of non-Abelian anyons.
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Submitted 14 December, 2011;
originally announced December 2011.
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Observation of reentrant quantum Hall states in the lowest Landau level
Authors:
Yang Liu,
C. G. Pappas,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $ν=1$ integer quantum Hall states in the lowest Landau level near filling factors $ν=4/5$ and 6/5. These states are not seen at low densities and become more prominent with increasing density and in wider wells. Our data suggest a close competition…
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Measurements in very low disorder two-dimensional electrons confined to relatively wide GaAs quantum well samples with tunable density reveal reentrant $ν=1$ integer quantum Hall states in the lowest Landau level near filling factors $ν=4/5$ and 6/5. These states are not seen at low densities and become more prominent with increasing density and in wider wells. Our data suggest a close competition between different types of Wigner crystal states near these fillings. We also observe an intriguing disappearance and reemergence of the $ν=4/5$ fractional quantum Hall effect with increasing density.
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Submitted 22 November, 2011;
originally announced November 2011.
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Impact of disorder on the 5/2 fractional quantum Hall state
Authors:
W. Pan,
N. Masuhara,
N. S. Sullivan,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer,
D. C. Tsui
Abstract:
We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long ra…
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We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.
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Submitted 30 September, 2011;
originally announced September 2011.
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Reentrant nu = 1 quantum Hall state in a two-dimensional hole system
Authors:
A. L. Graninger,
D. Kamburov,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler
Abstract:
We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence a…
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We report the observation of a reentrant quantum Hall state at the Landau level filling factor nu = 1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the nu = 1 quantum Hall state in the presence of a parallel magnetic field component B||, followed by a strengthening and reemergence as B|| is further increased. The robustness of the nu = 1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B|| needed to invoke the transition increases with the total density of the system.
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Submitted 17 September, 2011;
originally announced September 2011.
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Evolution of the 7/2 fractional quantum Hall state in two-subband systems
Authors:
Yang Liu,
J. Shabani,
D. Kamburov,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $ν=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt-angle, or symmetry of the charge distribution. When the charge distribution is strongly asymmetric, there is a remarkabl…
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We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor $ν=7/2$ in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt-angle, or symmetry of the charge distribution. When the charge distribution is strongly asymmetric, there is a remarkable persistence of a resistance minimum near $ν=7/2$ when two Landau levels belonging to the two subbands cross at the Fermi energy. The field position of this minimum tracks the 5/2 filling of the symmetric subband, suggesting a pinning of the crossing levels and a developing 5/2 FQHS in the symmetric subband even when the antisymmetric level is partially filled.
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Submitted 7 September, 2011;
originally announced September 2011.
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Anomalous robustness of the 5/2 fractional quantum Hall state near a sharp phase boundary
Authors:
Yang Liu,
D. Kamburov,
M. Shayegan,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin
Abstract:
We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $ν= $ 5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy ($E_F$) lies in the excited-state LL of the symmetric subband, t…
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We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $ν= $ 5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy ($E_F$) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once $E_F$ moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.
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Submitted 7 September, 2011; v1 submitted 1 June, 2011;
originally announced June 2011.
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Zero-Bias Anomalies in Narrow Tunnel Junctions in the Quantum Hall Regime
Authors:
P. Jiang,
C. -C. Chien,
I. Yang,
W. Kang,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors $ν> 1$ and a strongly suppressed conductance for $ν< 1$. A transition between the two behaviors is found near $ν\approx 1$. The zero-bias anomaly (ZBA)…
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We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors $ν> 1$ and a strongly suppressed conductance for $ν< 1$. A transition between the two behaviors is found near $ν\approx 1$. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for $ν< 1$ occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the $n = 0$ Landau levels. The ZBA for $ν> 1$ arises from weak tunneling of quasiparticles between the $n = 1$ edge channels.
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Submitted 28 January, 2011; v1 submitted 15 June, 2010;
originally announced June 2010.
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Observation of a One-Dimensional Spin-Orbit Gap in a Quantum Wire
Authors:
C. H. L. Quay,
T. L. Hughes,
J. A. Sulpizio,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West,
D. Goldhaber-Gordon,
R. de Picciotto
Abstract:
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of 'spintronics' or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effec…
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Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of 'spintronics' or spin-based electronics is moving beyond effects based on local spin polarisation and is turning its attention to spin-orbit interaction (SOI) effects, which hold promise for the production, detection and manipulation of spin currents, allowing coherent transmission of information within a device. While SOI-induced spin transport effects have been observed in two- and three-dimensional samples, these have been subtle and elusive, often detected only indirectly in electrical transport or else with more sophisticated techniques. Here we present the first observation of a predicted 'spin-orbit gap' in a one-dimensional sample, where counter-propagating spins, constituting a spin current, are accompanied by a clear signal in the easily-measured linear conductance of the system.
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Submitted 24 November, 2009; v1 submitted 23 November, 2009;
originally announced November 2009.
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Observation of a Fractional Quantum Hall State at $ν=1/4$ in a Wide GaAs Quantum Well
Authors:
D. R. Luhman,
W. Pan,
D. C. Tsui,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
We report the observation of an even-denominator fractional quantum Hall (FQH) state at $ν=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$ cm$^{-2}$. We have performed transport measurements at $T\sim35$ mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field,…
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We report the observation of an even-denominator fractional quantum Hall (FQH) state at $ν=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$ cm$^{-2}$. We have performed transport measurements at $T\sim35$ mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at $ν=1/4$. Upon tilting the sample to an angle of $θ=20.3^o$ a clear FQH state at emerges at $ν=1/4$ with a plateau in the Hall resistance and a strong minimum in the diagonal resistance.
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Submitted 13 October, 2008;
originally announced October 2008.
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Experimental studies of the fractional quantum Hall effect in the first excited Landau level
Authors:
W. Pan,
J. S. Xia,
H. L. Stormer,
D. C. Tsui,
C. Vicente,
E. D. Adams,
N. S. Sullivan,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and report the following results: For the even-denominator FQHE states, the sample dependence of the nu=5/2 state clearly shows that disorder plays an important role…
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We present a spectrum of experimental data on the fractional quantum Hall effect (FQHE) states in the first excited Landau level, obtained in an ultrahigh mobility two-dimensional electron system (2DES) and at very low temperatures and report the following results: For the even-denominator FQHE states, the sample dependence of the nu=5/2 state clearly shows that disorder plays an important role in determining the energy gap at nu=5/2. For the developing nu=19/8 FQHE state the temperature dependence of the Rxx minimum implies an energy gap of ~5mK.The energy gaps of the odd-denominator FQHE states at nu=7/3 and 8/3 also increase with decreasing disorder, similar to the gap at 5/2 state. Unexpectedly and contrary to earlier data on lower mobility samples, in this ultra-high quality specimen, the nu=13/5 state is missing, while its particle-hole conjugate state, the nu=12/5 state, is a fully developed FQHE state. We speculate that this disappearance might indicate a spin polarization of the nu=13/5 state. Finally, the temperature dependence is studied for the two-reentrant integer quantum Hall states around nu=5/2 and is found to show a very narrow temperature range for the transition from quantized to classical value.
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Submitted 8 January, 2008;
originally announced January 2008.
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Aharonov-Bohm-Like Oscillations in Quantum Hall Corrals
Authors:
M. D. Godfrey,
P. Jiang,
W. Kang,
S. H. Simon,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
Experimental study of quantum Hall corrals reveals Aharonov-Bohm-Like (ABL) oscillations. Unlike the Aharonov-Bohm effect which has a period of one flux quantum, $Φ_{0}$, the ABL oscillations possess a flux period of $Φ_{0}/f$, where $f$ is the integer number of fully filled Landau levels in the constrictions. Detection of the ABL oscillations is limited to the low magnetic field side of the…
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Experimental study of quantum Hall corrals reveals Aharonov-Bohm-Like (ABL) oscillations. Unlike the Aharonov-Bohm effect which has a period of one flux quantum, $Φ_{0}$, the ABL oscillations possess a flux period of $Φ_{0}/f$, where $f$ is the integer number of fully filled Landau levels in the constrictions. Detection of the ABL oscillations is limited to the low magnetic field side of the $ν_{c}$ = 1, 2, 4, 6... integer quantum Hall plateaus. These oscillations can be understood within the Coulomb blockade model of quantum Hall interferometers as forward tunneling and backscattering, respectively, through the center island of the corral from the bulk and the edge states. The evidence for quantum interference is weak and circumstantial.
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Submitted 17 August, 2007;
originally announced August 2007.
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Large Bychkov-Rashba spin-orbit coupling in high-mobility GaN/AlGaN heterostructures
Authors:
S. Schmult,
M. J. Manfra,
A. Punnoose,
A. M. Sergent,
K. W. Baldwin,
R. J. Molnar
Abstract:
We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivity, indicating the presence of strong spin-orbit coupling. Density dependent measurements of magnetoconductivity indicate that the coupling is mainl…
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We present low temperature magnetoconductivity measurements of a density-tunable and high mobility two-dimensional electron gas confined in the wide bandgap GaN/AlGaN system. We observed pronounced anti-localization minima in the low-field conductivity, indicating the presence of strong spin-orbit coupling. Density dependent measurements of magnetoconductivity indicate that the coupling is mainly due to the Bychkov-Rashba mechanism. In addition, we have derived a closed-form expression for the magnetoconductivity, allowing us to extract reliable transport parameters for our devices. The Rashba spin-orbit coupling constant is $α_{so}$ $\sim$ 6$\times$ 10$^{-13}$eVm, while the conduction band spin-orbit splitting energy amounts to $Δ_{so}$ $\sim$ 0.3meV at n$_e$=1$\times10^{16}$m$^{-2}$.
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Submitted 8 May, 2006;
originally announced May 2006.
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Interaction Effects and Pseudogap in Two-Dimensional Lateral Tunnel Junctions
Authors:
P. Jiang,
I. Yang,
W. Kang,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
Tunneling characteristics of a two-dimensional lateral tunnel junction (2DLTJ) are reported. A pseudogap on the order of Coulomb energy is detected in the tunneling density of states (TDOS) when two identical two-dimensional electron systems are laterally separated by a thin energy barrier. The Coulombic pseudogap remains robust well into the quantum Hall regime until it is overshadowed by the c…
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Tunneling characteristics of a two-dimensional lateral tunnel junction (2DLTJ) are reported. A pseudogap on the order of Coulomb energy is detected in the tunneling density of states (TDOS) when two identical two-dimensional electron systems are laterally separated by a thin energy barrier. The Coulombic pseudogap remains robust well into the quantum Hall regime until it is overshadowed by the cyclotron gap in the TDOS. The pseudogap is modified by in-plane magnetic field, demonstrating a non-trivial effect of in-plane magnetic field on the electron-electron interaction.
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Submitted 27 February, 2006;
originally announced February 2006.
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Resistance scaling for Composite Fermions in the presence of a density gradient
Authors:
W. Pan,
H. L. Stormer,
D. C. Tsui,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
The magnetoresistance, Rxx, at even-denominator fractional fillings, of an ultra high quality two-dimensional electron system at T ~ 35 mK is observed to be strictly linear in magnetic field, B. While at 35mK Rxx is dominated by the integer and fractional quantum Hall states, at T~1.2K an almost perfect linear relationship between Rxx vs B emerges over the whole magnetic field range except for s…
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The magnetoresistance, Rxx, at even-denominator fractional fillings, of an ultra high quality two-dimensional electron system at T ~ 35 mK is observed to be strictly linear in magnetic field, B. While at 35mK Rxx is dominated by the integer and fractional quantum Hall states, at T~1.2K an almost perfect linear relationship between Rxx vs B emerges over the whole magnetic field range except for spikes at the integer quantum Hall states. This linear Rxx cannot be understood within the Composite Fermion model, but can be explained through the existence of a density gradient in our sample.
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Submitted 27 January, 2006;
originally announced January 2006.
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Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region
Authors:
Y. -W. Tan,
J. Zhu,
H. L. Stormer,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
We determine the spin susceptibility $χ$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, $χ$ decreases monoto…
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We determine the spin susceptibility $χ$ in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, $χ$ decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to $4\times10^{11} cm^{-2}$. In the high density limit, $χ$ tends correctly towards $χ\to 1$ and compare well with recent theory.
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Submitted 28 November, 2005;
originally announced November 2005.
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Spin-charge separation and localization in one-dimension
Authors:
O. M. Auslaender,
H. Steinberg,
A. Yacoby,
Y. Tserkovnyak,
B. I. Halperin,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
We report on measurements of quantum many-body modes in ballistic wires and their dependence on Coulomb interactions, obtained from tunneling between two parallel wires in a GaAs/AlGaAs heterostructure while varying electron density. We observe two spin modes and one charge mode of the coupled wires, and map the dispersion velocities of the modes down to a critical density, at which spontaneous…
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We report on measurements of quantum many-body modes in ballistic wires and their dependence on Coulomb interactions, obtained from tunneling between two parallel wires in a GaAs/AlGaAs heterostructure while varying electron density. We observe two spin modes and one charge mode of the coupled wires, and map the dispersion velocities of the modes down to a critical density, at which spontaneous localization is observed. Theoretical calculations of the charge velocity agree well with the data, although they also predict an additional charge mode that is not observed. The measured spin velocity is found to be smaller than theoretically predicted.
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Submitted 3 July, 2005;
originally announced July 2005.
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Localization Transition in a Ballistic Quantum Wire
Authors:
H. Steinberg,
O. M. Auslaender,
A. Yacoby,
J. Qian,
G. A. Fiete,
Y. Tserkovnyak,
B. I. Halperin,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
The many-body wave-function of an interacting one-dimensional electron system is probed, focusing on the low-density, strong interaction regime. The properties of the wave-function are determined using tunneling between two long, clean, parallel quantum wires in a GaAs/AlGaAs heterostructure, allowing for gate-controlled electron density. As electron density is lowered to a critical value the ma…
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The many-body wave-function of an interacting one-dimensional electron system is probed, focusing on the low-density, strong interaction regime. The properties of the wave-function are determined using tunneling between two long, clean, parallel quantum wires in a GaAs/AlGaAs heterostructure, allowing for gate-controlled electron density. As electron density is lowered to a critical value the many-body state abruptly changes from an extended state with a well-defined momentum to a localized state with a wide range of momentum components. The signature of the localized states appears as discrete tunneling features at resonant gate-voltages, corresponding to the depletion of single electrons and showing Coulomb-blockade behavior. Typically 5-10 such features appear, where the one-electron state has a single-lobed momentum distribution, and the few-electron states have double-lobed distributions with peaks at $\pm k_F$. A theoretical model suggests that for a small number of particles (N<6), the observed state is a mixture of ground and thermally excited spin states.
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Submitted 30 June, 2005;
originally announced June 2005.
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Quantization of the diagonal resistance: Density gradients and the empirical resistance rule in a 2D system
Authors:
W. Pan,
J. S. Xia,
H. L. Stormer,
D. C. Tsui,
C. L. Vicente,
E. D. Adams,
N. S. Sullivan,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
We have observed quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy. Peaks in R_xx occur at different positions in positive and negative magnetic fields. Practically all R_xx features can be explained quantitatively by a ~1%/cm…
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We have observed quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy. Peaks in R_xx occur at different positions in positive and negative magnetic fields. Practically all R_xx features can be explained quantitatively by a ~1%/cm electron density gradient. Therefore, R_xx is determined by R_xy and unrelated to the diagonal resistivity rho_xx. Our findings throw an unexpected light on the empirical resistivity rule for 2D systems.
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Submitted 23 June, 2005;
originally announced June 2005.
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Acoustic phonon scattering in a low density, high mobility AlGaN/GaN field effect transistor
Authors:
E. A. Henriksen,
S. Syed,
Y. Ahmadian,
M. J. Manfra,
K. W. Baldwin,
A. M. Sergent,
R. J. Molnar,
H. L. Stormer
Abstract:
We report on the temperature dependence of the mobility, $μ$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $μ_{ac}^{-1} = α$T indicating that acoustic phonon…
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We report on the temperature dependence of the mobility, $μ$, of the two-dimensional electron gas in a variable density AlGaN/GaN field effect transistor, with carrier densities ranging from 0.4$\times10^{12}$ cm$^{-2}$ to 3.0$\times10^{12}$ cm$^{-2}$ and a peak mobility of 80,000 cm$^{2}$/Vs. Between 20 K and 50 K we observe a linear dependence $μ_{ac}^{-1} = α$T indicating that acoustic phonon scattering dominates the temperature dependence of the mobility, with $α$ being a monotonically increasing function of decreasing 2D electron density. This behavior is contrary to predictions of scattering in a degenerate electron gas, but consistent with calculations which account for thermal broadening and the temperature dependence of the electron screening. Our data imply a deformation potential D = 12-15 eV.
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Submitted 27 March, 2005;
originally announced March 2005.
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High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates
Authors:
M. J. Manfra,
L. N. Pfeiffer,
K. W. West,
R. de Picciotto,
K. W. Baldwin
Abstract:
We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon utilizing a novel resistive filament source. At T=0.3K and carrier density p=1x10^11cm^-2, a mobility of 10^6cm^2/Vs is achieved. At fixed carrier density p=1…
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We report on the transport properties of a high mobility two-dimensional hole system (2DHS) confined in GaAs/AlGaAs quantum wells grown molecular-beam epitaxy on the (100) surface of GaAs. The quantum wells are modulation-doped with carbon utilizing a novel resistive filament source. At T=0.3K and carrier density p=1x10^11cm^-2, a mobility of 10^6cm^2/Vs is achieved. At fixed carrier density p=10^11cm^-2, the mobility is found to be a non-monotonic function of the quantum well width. The mobility peaks at 10^6cm^2/Vs for a 15nm well and is reduced for both smaller and larger well widths for these (100) samples. The mobility anisotropy is found to be small. Mobility along (0\bar11) is approximately 20% higher than along the (011) direction. In addition, the low temperature carrier density is found to have low sensitivity to light. The hole density increases by only ~10% after exposure to red light at T=4.2K. In structures designed for a lower carrier density of 3.6x10^10cm^-2, a mobility of 800,000cm^2/Vs is achieved at T=15mK.
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Submitted 24 January, 2005;
originally announced January 2005.
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Measurements of the density-dependent many-body electron mass in 2D GaAs/AlGaAs Heterostructures
Authors:
Y. -W. Tan,
J. Zhu,
H. L. Stormer,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of r_s (6 to 0.8). Toward low-densities we observe a rapid increas…
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We determine the density-dependent electron mass, m*, in two-dimensional (2D) electron systems of GaAs/AlGaAs heterostructures by performing detailed low-temperature Shubnikov deHaas measurements. Using very high quality transistors with tunable electron densities we measure m* in single, high mobility specimens over a wide range of r_s (6 to 0.8). Toward low-densities we observe a rapid increase of m* by as much as 40%. For 2>r_s>0.8 the mass values fall ~10% below the band mass of GaAs. Numerical calculations are in qualitative agreement with our data but differ considerably in detail.
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Submitted 9 December, 2004;
originally announced December 2004.
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Evidence for Skyrmion crystallization from NMR relaxation experiments
Authors:
G. Gervais,
H. L. Stormer,
D. C. Tsui,
P. L. Kuhns,
W. G. Moulton,
A. P. Reyes,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate $(1/T_{1})$ was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of $^{75}$As is found to relax much more efficiently with $T\to 0$ and when a well developed quantum Hall state with $R_{xx}\simeq 0$ occu…
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A resistively detected NMR technique was used to probe the two-dimensional electron gas in a GaAs/AlGaAs quantum well. The spin-lattice relaxation rate $(1/T_{1})$ was extracted at near complete filling of the first Landau level by electrons. The nuclear spin of $^{75}$As is found to relax much more efficiently with $T\to 0$ and when a well developed quantum Hall state with $R_{xx}\simeq 0$ occurs. The data show a remarkable correlation between the nuclear spin relaxation and localization. This suggests that the magnetic ground state near complete filling of the first Landau level may contain a lattice of topological spin texture, i.e. a Skyrmion crystal.
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Submitted 1 January, 2005; v1 submitted 6 December, 2004;
originally announced December 2004.
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Quantum Hall line junction with impurities as a multi-slit Luttinger liquid interferometer
Authors:
I. Yang,
W. Kang,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West,
Eun-Ah Kim,
E. Fradkin
Abstract:
We report on quantum interference between a pair of counterpropagating quantum Hall edge states that are separated by a high quality tunnel barrier. Observed Aharonov-Bohm oscillations are analyzed in terms of resonant tunneling between coupled Luttinger liquids that creates bound electronic states between pairs of tunnel centers that act like interference slits. We place a lower bound in the ra…
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We report on quantum interference between a pair of counterpropagating quantum Hall edge states that are separated by a high quality tunnel barrier. Observed Aharonov-Bohm oscillations are analyzed in terms of resonant tunneling between coupled Luttinger liquids that creates bound electronic states between pairs of tunnel centers that act like interference slits. We place a lower bound in the range of 20-40 $μ$m for the phase coherence length and directly confirm the extended phase coherence of quantum Hall edge states.
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Submitted 27 January, 2005; v1 submitted 23 July, 2004;
originally announced July 2004.
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Electron correlation in the second Landau level; a competition between many, nearly degenerate quantum phases
Authors:
J. S. Xia,
W. Pan,
C. L. Vincente,
E. D. Adams,
N. S. Sullivan,
H. L. Stormer,
D. C. Tsui,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
At a very low temperature of 9mK, electrons in the 2nd Landau level of an extremely high mobility two-dimensional electron system exhibit a very complex electronic behavior. With varying filling factor, quantum liquids of different origins compete with several insulating phases leading to an irregular pattern in the transport parameters. We observe a fully developed $ν=2+2/5$ state separated fro…
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At a very low temperature of 9mK, electrons in the 2nd Landau level of an extremely high mobility two-dimensional electron system exhibit a very complex electronic behavior. With varying filling factor, quantum liquids of different origins compete with several insulating phases leading to an irregular pattern in the transport parameters. We observe a fully developed $ν=2+2/5$ state separated from the even-denominator $ν=2+1/2$ state by an insulating phase and a $ν=2+2/7$ and $ν=2+1/5$ state surrounded by such phases. A developing plateau at $ν=2+3/8$ points to the existence of other even-denominator states.
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Submitted 29 June, 2004;
originally announced June 2004.
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Many-body dispersions in interacting ballistic quantum wires
Authors:
Ophir M. Auslaender,
Hadar Steinberg,
Amir Yacoby,
Yaroslav Tserkovnyak,
Bertrand I. Halperin,
Rafael de Picciotto,
Kirk W. Baldwin,
Loren N. Pfeiffer,
Ken W. West
Abstract:
We have measured the collective excitation spectrum of interacting electrons in one-dimension. The experiment consists of controlling the energy and momentum of electrons tunneling between two clean and closely situated, parallel quantum wires in a GaAs/AlGaAs heterostructure while measuring the resulting conductance. We measure excitation spectra that clearly deviate from the non-interacting sp…
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We have measured the collective excitation spectrum of interacting electrons in one-dimension. The experiment consists of controlling the energy and momentum of electrons tunneling between two clean and closely situated, parallel quantum wires in a GaAs/AlGaAs heterostructure while measuring the resulting conductance. We measure excitation spectra that clearly deviate from the non-interacting spectrum, attesting to the importance of Coulomb interactions. Notable is an observed 30% enhancement of the velocity of the main excitation branch relative to non-interacting electrons with the same density. In short wires, finite size effects resulting from broken translational invariance are observed. Spin - charge separation is manifested through moire patterns, reflecting different spin and charge excitation velocities.
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Submitted 16 May, 2004;
originally announced May 2004.
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Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level
Authors:
G. Gervais,
L. W. Engel,
H. L. Stormer,
D. C. Tsui,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer
Abstract:
Magnetotransport measurements were performed in a ultra-high mobility GaAs/AlGaAs quantum well of density $\sim 3.0 \times 10^{11}$ $cm^{-2}$. The temperature dependence of the magnetoresistance $R_{xx}$ was studied in detail in the vicinity of $ν={9/2}$. In particular, we discovered new minima in $R_{xx}$ at filling factor $ν\simeq 4{1/5}$ and $4{4/5}$, but only at intermediate temperatures…
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Magnetotransport measurements were performed in a ultra-high mobility GaAs/AlGaAs quantum well of density $\sim 3.0 \times 10^{11}$ $cm^{-2}$. The temperature dependence of the magnetoresistance $R_{xx}$ was studied in detail in the vicinity of $ν={9/2}$. In particular, we discovered new minima in $R_{xx}$ at filling factor $ν\simeq 4{1/5}$ and $4{4/5}$, but only at intermediate temperatures $80\lesssim T\lesssim 120$ mK. We interpret these as evidence for a fractional quantum Hall liquid forming in the N=2 Landau level and competing with bubble and Wigner crystal phases favored at lower temperatures. Our data suggest that a magnetically driven insulator-insulator quantum phase transition occurs between the bubble and Wigner crystal phases at T=0.
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Submitted 21 December, 2004; v1 submitted 5 February, 2004;
originally announced February 2004.
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Cascade of Quantum Phase Transitions in Tunnel-Coupled Edge States
Authors:
I. Yang,
W. Kang,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
We report on the cascade of quantum phase transitions exhibited by tunnel-coupled edge states across a quantum Hall line junction. We identify a series of quantum critical points between successive strong and weak tunneling regimes in the zero-bias conductance. Scaling analysis shows that the conductance near the critical magnetic fields $B_{c}$ is a function of a single scaling argument…
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We report on the cascade of quantum phase transitions exhibited by tunnel-coupled edge states across a quantum Hall line junction. We identify a series of quantum critical points between successive strong and weak tunneling regimes in the zero-bias conductance. Scaling analysis shows that the conductance near the critical magnetic fields $B_{c}$ is a function of a single scaling argument $|B-B_{c}|T^{-κ}$, where the exponent $κ= 0.42$. This puzzling resemblance to a quantum Hall-insulator transition points to importance of interedge correlation between the coupled edge states.
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Submitted 4 February, 2004; v1 submitted 2 November, 2003;
originally announced November 2003.
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Fractional Quantum Hall Effect of Composite Fermions
Authors:
W. Pan,
H. L. Stormer,
D. C. Tsui,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do not fit into the standard series of integral quantum Hall effects (IQHE) of composite fermions (CF) at nu=p/(2mp +/- 1). They rather can be regarded as the FQ…
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In a GaAs/AlGaAs quantum well of electron density 1x10^{11} cm^{-2} we observe a fractional quantum Hall effect (FQHE) at filling factors nu=4/11, and 5/13, and weaker states at nu=6/17, 4/13, 5/17 and 7/11. These sequences of fractions do not fit into the standard series of integral quantum Hall effects (IQHE) of composite fermions (CF) at nu=p/(2mp +/- 1). They rather can be regarded as the FQHE of CFs attesting to residual interactions between these composite particles. In tilted magnetic fields the nu=4/11 state remains unchanged, strongly suggesting it to be spin-polarized. The weak nu=7/11 state vanishes quickly with tilt.
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Submitted 20 March, 2003;
originally announced March 2003.
