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Determination of the current-phase relation of an InAs 2DEG Josephson junction with a microwave resonator
Authors:
Zoltán Scherübl,
Máté Sütő,
Dávid Kóti,
Endre Tóvári,
Csaba Horváth,
Tamás Kalmár,
Bence Vasas,
Martin Berke,
Magdhi Kirti,
Giorgio Biasiol,
Szabolcs Csonka,
Péter Makk,
Gergő Fülöp
Abstract:
Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in de…
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Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in detail. We have investigated a Josephson junction where the weak link is a two-dimensional electron gas (2DEG) hosted in an InAs/InGaAs heterostructure grown on a GaAs substrate. We employed the in-situ epitaxially grown Al layer as superconducting contacts to form an rf SQUID, and also to create a microwave resonator for sensing the Josephson inductance. We determined the gate-dependent current-phase relation, and observed supercurrent interference in out-of-plane magnetic fields. With the application of an in-plane magnetic field, we induced asymmetry in the interference pattern, which was found to be anisotropic in the device plane.
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Submitted 28 June, 2024;
originally announced June 2024.
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Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch
Authors:
Tosson Elalaily,
Martin Berke,
Ilari Lilja,
Alexander Savin,
Gergő Fülöp,
Lőrinc Kupás,
Thomas Kanne,
Jesper Nygård,
Péter Makk,
Pertti Hakonen,
Szabolcs Csonka
Abstract:
The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect…
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The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage.
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Submitted 28 May, 2024; v1 submitted 24 December, 2023;
originally announced December 2023.
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Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage
Authors:
Leon Ruf,
Tosson Elalaily,
Claudio Puglia,
Yurii P. Ivanov,
Francois Joint,
Martin Berke,
Andrea Iorio,
Peter Makk,
Giorgio De Simoni,
Simone Gasparinetti,
Giorgio Divitini,
Szabolcs Csonka,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronic…
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The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.
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Submitted 7 December, 2023; v1 submitted 14 April, 2023;
originally announced April 2023.
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Gate-control of superconducting current: mechanisms, parameters and technological potential
Authors:
Leon Ruf,
Claudio Puglia,
Tosson Elalaily,
Giorgio De Simoni,
Francois Joint,
Martin Berke,
Jennifer Koch,
Andrea Iorio,
Sara Khorshidian,
Peter Makk,
Simone Gasparinetti,
Szabolcs Csonka,
Wolfgang Belzig,
Mario Cuoco,
Francesco Giazotto,
Elke Scheer,
Angelo Di Bernardo
Abstract:
In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superco…
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In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies.
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Submitted 28 February, 2024; v1 submitted 27 February, 2023;
originally announced February 2023.
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Signatures of gate-driven out of equilibrium superconductivity in Ta/InAs nanowires
Authors:
Tosson Elalaily,
Martin Berke,
Máté Kedves,
Gergő Fülöp,
Zoltán Scherübl,
Thomas Kanne,
Jesper Nygård,
Péter Makk,
Szabolcs Csonka
Abstract:
Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nano…
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Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire$-$gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.
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Submitted 30 October, 2022;
originally announced October 2022.
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MetaCOG: A Hierarchical Probabilistic Model for Learning Meta-Cognitive Visual Representations
Authors:
Marlene D. Berke,
Zhangir Azerbayev,
Mario Belledonne,
Zenna Tavares,
Julian Jara-Ettinger
Abstract:
Humans have the capacity to question what we see and to recognize when our vision is unreliable (e.g., when we realize that we are experiencing a visual illusion). Inspired by this capacity, we present MetaCOG: a hierarchical probabilistic model that can be attached to a neural object detector to monitor its outputs and determine their reliability. MetaCOG achieves this by learning a probabilistic…
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Humans have the capacity to question what we see and to recognize when our vision is unreliable (e.g., when we realize that we are experiencing a visual illusion). Inspired by this capacity, we present MetaCOG: a hierarchical probabilistic model that can be attached to a neural object detector to monitor its outputs and determine their reliability. MetaCOG achieves this by learning a probabilistic model of the object detector's performance via Bayesian inference -- i.e., a meta-cognitive representation of the network's propensity to hallucinate or miss different object categories. Given a set of video frames processed by an object detector, MetaCOG performs joint inference over the underlying 3D scene and the detector's performance, grounding inference on a basic assumption of object permanence. Paired with three neural object detectors, we show that MetaCOG accurately recovers each detector's performance parameters and improves the overall system's accuracy. We additionally show that MetaCOG is robust to varying levels of error in object detector outputs, showing proof-of-concept for a novel approach to the problem of detecting and correcting errors in vision systems when ground-truth is not available.
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Submitted 8 July, 2024; v1 submitted 6 October, 2021;
originally announced October 2021.
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Gate-controlled supercurrent in epitaxial Al/InAs nanowires
Authors:
Tosson Elalaily,
Olivér Kürtössy,
Zoltán Scherübl,
Martin Berke,
Gergő Fülöp,
István Endre Lukács,
Thomas Kanne,
Jesper Nygård,
Kenji Watanabe,
Takashi Taniguchi,
Péter Makk,
Szabolcs Csonka
Abstract:
Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superco…
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Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying $\simeq\pm$ 23$\,$V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study on the temperature and magnetic field dependencies of GCS suggests that hot electron injection alone cannot explain our experimental findings.
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Submitted 21 June, 2021; v1 submitted 11 June, 2021;
originally announced June 2021.
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Learning a metacognition for object perception
Authors:
Marlene Berke,
Mario Belledonne,
Julian Jara-Ettinger
Abstract:
Beyond representing the external world, humans also represent their own cognitive processes. In the context of perception, this metacognition helps us identify unreliable percepts, such as when we recognize that we are seeing an illusion. Here we propose MetaGen, a model for the unsupervised learning of metacognition. In MetaGen, metacognition is expressed as a generative model of how a perceptual…
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Beyond representing the external world, humans also represent their own cognitive processes. In the context of perception, this metacognition helps us identify unreliable percepts, such as when we recognize that we are seeing an illusion. Here we propose MetaGen, a model for the unsupervised learning of metacognition. In MetaGen, metacognition is expressed as a generative model of how a perceptual system produces noisy percepts. Using basic principles of how the world works (such as object permanence, part of infants' core knowledge), MetaGen jointly infers the objects in the world causing the percepts and a representation of its own perceptual system. MetaGen can then use this metacognition to infer which objects are actually present in the world. On simulated data, we find that MetaGen quickly learns a metacognition and improves overall accuracy, outperforming models that lack a metacognition.
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Submitted 30 November, 2020;
originally announced November 2020.
