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Characterization of process-related interfacial dielectric loss in aluminum-on-silicon by resonator microwave measurements, materials analysis, and imaging
Authors:
Lert Chayanun,
Janka Biznárová,
Lunjie Zeng,
Per Malmberg,
Andreas Nylander,
Amr Osman,
Marcus Rommel,
Pui Lam Tam,
Eva Olsson,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconduct…
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We systematically investigate the influence of the fabrication process on dielectric loss in aluminum-on-silicon superconducting coplanar waveguide resonators with internal quality factors ($Q_i$) of about one million at the single-photon level. These devices are essential components in superconducting quantum processors; they also serve as proxies for understanding the energy loss of superconducting qubits. By systematically varying several fabrication steps, we identify the relative importance of reducing loss at the substrate-metal and the substrate-air interfaces. We find that it is essential to clean the silicon substrate in hydrogen fluoride (HF) prior to aluminum deposition. A post-fabrication removal of the oxides on the surface of the silicon substrate and the aluminum film by immersion in HF further improves the $Q_i$. We observe a small, but noticeable, adverse effect on the loss by omitting either standard cleaning (SC1), pre-deposition heating of the substrate to 300$°$C, or in-situ post-deposition oxidation of the film's top surface. We find no improvement due to excessive pumping meant to reach a background pressure below $6{\times} 10^{-8}$ mbar. We correlate the measured loss with microscopic properties of the substrate-metal interface through characterization with X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and atomic force microscopy (AFM).
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Submitted 1 March, 2024;
originally announced March 2024.
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Signal crosstalk in a flip-chip quantum processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Robert Rehammar,
Marco Caputo,
Leif Grönberg,
Jorge Fernández-Pendás,
Anton Frisk Kockum,
Janka Biznárová,
Liangyu Chen,
Christian Križan,
Andreas Nylander,
Amr Osman,
Anita Fadavi Roudsari,
Daryoush Shiri,
Giovanna Tancredi,
Joonas Govenius,
Jonas Bylander
Abstract:
Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk…
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Quantum processors require a signal-delivery architecture with high addressability (low crosstalk) to ensure high performance already at the scale of dozens of qubits. Signal crosstalk causes inadvertent driving of quantum gates, which will adversely affect quantum-gate fidelities in scaled-up devices. Here, we demonstrate packaged flip-chip superconducting quantum processors with signal-crosstalk performance competitive with those reported in other platforms. For capacitively coupled qubit-drive lines, we find on-resonant crosstalk better than -27 dB (average -37 dB). For inductively coupled magnetic-flux-drive lines, we find less than 0.13 % direct-current flux crosstalk (average 0.05 %). These observed crosstalk levels are adequately small and indicate a decreasing trend with increasing distance, which is promising for further scaling up to larger numbers of qubits. We discuss the implication of our results for the design of a low-crosstalk, on-chip signal delivery architecture, including the influence of a shielding tunnel structure, potential sources of crosstalk, and estimation of crosstalk-induced qubit-gate error in scaled-up quantum processors.
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Submitted 1 March, 2024;
originally announced March 2024.
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Intermodulation spectroscopy and the nonlinear response of two-level systems in superconducting coplanar waveguide resonators
Authors:
Janka Biznárová,
J. C. Rivera Hernández,
Daniel Forchheimer,
Jonas Bylander,
David B. Haviland,
Gustav Andersson
Abstract:
Two-level system (TLS) loss is typically limiting the coherence of superconducting quantum circuits. The loss induced by TLS defects is nonlinear, resulting in quality factors with a strong dependence on the circulating microwave power. We observe frequency mixing due to this nonlinearity by applying a two-tone drive to a coplanar waveguide resonator and measuring the intermodulation products usin…
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Two-level system (TLS) loss is typically limiting the coherence of superconducting quantum circuits. The loss induced by TLS defects is nonlinear, resulting in quality factors with a strong dependence on the circulating microwave power. We observe frequency mixing due to this nonlinearity by applying a two-tone drive to a coplanar waveguide resonator and measuring the intermodulation products using a multifrequency lock-in technique. This intermodulation spectroscopy method provides an efficient approach to characterizing TLS loss in superconducting circuits. Using harmonic balance reconstruction, we recover the nonlinear parameters of the device-TLS interaction, which are in good agreement with the standard tunnelling model for TLSs.
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Submitted 16 February, 2024;
originally announced February 2024.
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Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits
Authors:
Janka Biznárová,
Amr Osman,
Emil Rehnman,
Lert Chayanun,
Christian Križan,
Per Malmberg,
Marcus Rommel,
Christopher Warren,
Per Delsing,
August Yurgens,
Jonas Bylander,
Anita Fadavi Roudsari
Abstract:
We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation…
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We demonstrate aluminum-on-silicon planar transmon qubits with time-averaged ${T_1}$ energy relaxation times of up to ${270\,μs}$, corresponding to Q = 5 million, and a highest observed value of ${501\,μs}$. We use materials analysis techniques and numerical simulations to investigate the dominant sources of energy loss, and devise and demonstrate a strategy towards mitigating them. The mitigation of loss is achieved by reducing the presence of oxide, a known host of defects, near the substrate-metal interface, by growing aluminum films thicker than 300 nm. A loss analysis of coplanar-waveguide resonators shows that the improvement is owing to a reduction of dielectric loss due to two-level system defects. We perform time-of-flight secondary ion mass spectrometry and observe a reduced presence of oxygen at the substrate-metal interface for the thicker films. The correlation between the enhanced performance and the film thickness is due to the tendency of aluminum to grow in columnar structures of parallel grain boundaries, where the size of the grain depends on the film thickness: transmission electron microscopy imaging shows that the thicker film has larger grains and consequently fewer grain boundaries containing oxide near this interface. These conclusions are supported by numerical simulations of the different loss contributions in the device.
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Submitted 10 October, 2023;
originally announced October 2023.
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Transmon qubit readout fidelity at the threshold for quantum error correction without a quantum-limited amplifier
Authors:
Liangyu Chen,
Hang-Xi Li,
Yong Lu,
Christopher W. Warren,
Christian J. Križan,
Sandoko Kosen,
Marcus Rommel,
Shahnawaz Ahmed,
Amr Osman,
Janka Biznárová,
Anita Fadavi Roudsari,
Benjamin Lienhard,
Marco Caputo,
Kestutis Grigoras,
Leif Grönberg,
Joonas Govenius,
Anton Frisk Kockum,
Per Delsing,
Jonas Bylander,
Giovanna Tancredi
Abstract:
High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to di…
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High-fidelity and rapid readout of a qubit state is key to quantum computing and communication, and it is a prerequisite for quantum error correction. We present a readout scheme for superconducting qubits that combines two microwave techniques: applying a shelving technique to the qubit that effectively increases the energy-relaxation time, and a two-tone excitation of the readout resonator to distinguish among qubit populations in higher energy levels. Using a machine-learning algorithm to post-process the two-tone measurement results further improves the qubit-state assignment fidelity. We perform single-shot frequency-multiplexed qubit readout, with a 140ns readout time, and demonstrate 99.5% assignment fidelity for two-state readout and 96.9% for three-state readout - without using a quantum-limited amplifier.
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Submitted 11 August, 2022;
originally announced August 2022.
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Extensive characterization of a family of efficient three-qubit gates at the coherence limit
Authors:
Christopher W. Warren,
Jorge Fernández-Pendás,
Shahnawaz Ahmed,
Tahereh Abad,
Andreas Bengtsson,
Janka Biznárová,
Kamanasish Debnath,
Xiu Gu,
Christian Križan,
Amr Osman,
Anita Fadavi Roudsari,
Per Delsing,
Göran Johansson,
Anton Frisk Kockum,
Giovanna Tancredi,
Jonas Bylander
Abstract:
While all quantum algorithms can be expressed in terms of single-qubit and two-qubit gates, more expressive gate sets can help reduce the algorithmic depth. This is important in the presence of gate errors, especially those due to decoherence. Using superconducting qubits, we have implemented a three-qubit gate by simultaneously applying two-qubit operations, thereby realizing a three-body interac…
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While all quantum algorithms can be expressed in terms of single-qubit and two-qubit gates, more expressive gate sets can help reduce the algorithmic depth. This is important in the presence of gate errors, especially those due to decoherence. Using superconducting qubits, we have implemented a three-qubit gate by simultaneously applying two-qubit operations, thereby realizing a three-body interaction. This method straightforwardly extends to other quantum hardware architectures, requires only a "firmware" upgrade to implement, and is faster than its constituent two-qubit gates. The three-qubit gate represents an entire family of operations, creating flexibility in quantum-circuit compilation. We demonstrate a gate fidelity of $97.90\%$, which is near the coherence limit of our device. We then generate two classes of entangled states, the GHZ and W states, by applying the new gate only once; in comparison, decompositions into the standard gate set would have a two-qubit gate depth of two and three, respectively. Finally, we combine characterization methods and analyze the experimental and statistical errors on the fidelity of the gates and of the target states.
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Submitted 6 July, 2022;
originally announced July 2022.
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Reference-State Error Mitigation: A Strategy for High Accuracy Quantum Computation of Chemistry
Authors:
Phalgun Lolur,
Mårten Skogh,
Christopher Warren,
Janka Biznárová,
Amr Osman,
Giovanna Tancredi,
Göran Wendin,
Jonas Bylander,
Martin Rahm
Abstract:
Decoherence and gate errors severely limit the capabilities of state-of-the-art quantum computers. This work introduces a strategy for reference-state error mitigation (REM) of quantum chemistry that can be straightforwardly implemented on current and near-term devices. REM can be applied alongside existing mitigation procedures, while requiring minimal post-processing and only one or no additiona…
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Decoherence and gate errors severely limit the capabilities of state-of-the-art quantum computers. This work introduces a strategy for reference-state error mitigation (REM) of quantum chemistry that can be straightforwardly implemented on current and near-term devices. REM can be applied alongside existing mitigation procedures, while requiring minimal post-processing and only one or no additional measurements. The approach is agnostic to the underlying quantum mechanical ansatz and is designed for the variational quantum eigensolver (VQE). Two orders-of-magnitude improvement in the computational accuracy of ground state energies of small molecules (H2, HeH+ and LiH) is demonstrated on superconducting quantum hardware. Simulations of noisy circuits with a depth exceeding 1000 two-qubit gates are used to argue for scalability of the method.
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Submitted 28 March, 2022;
originally announced March 2022.
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Engineering symmetry-selective couplings of a superconducting artificial molecule to microwave waveguides
Authors:
Mohammed Ali Aamir,
Claudia Castillo Moreno,
Simon Sundelin,
Janka Biznárová,
Marco Scigliuzzo,
Kowshik Erappaji Patel,
Amr Osman,
D. P. Lozano,
Simone Gasparinetti
Abstract:
Tailoring the decay rate of structured quantum emitters into their environment opens new avenues for nonlinear quantum optics, collective phenomena, and quantum communications. Here we demonstrate a novel coupling scheme between an artificial molecule comprising two identical, strongly coupled transmon qubits, and two microwave waveguides. In our scheme, the coupling is engineered so that transiti…
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Tailoring the decay rate of structured quantum emitters into their environment opens new avenues for nonlinear quantum optics, collective phenomena, and quantum communications. Here we demonstrate a novel coupling scheme between an artificial molecule comprising two identical, strongly coupled transmon qubits, and two microwave waveguides. In our scheme, the coupling is engineered so that transitions between states of the same (opposite) symmetry, with respect to the permutation operator, are predominantly coupled to one (the other) waveguide. The symmetry-based coupling selectivity, as quantified by the ratio of the coupling strengths, exceeds a factor of 30 for both the waveguides in our device. In addition, we implement a two-photon Raman process activated by simultaneously driving both waveguides, and show that it can be used to coherently couple states of different symmetry in the single-excitation manifold of the molecule. Using that process, we implement frequency conversion across the waveguides, mediated by the molecule, with efficiency of about 95%. Finally, we show that this coupling arrangement makes it possible to straightforwardly generate spatially-separated Bell states propagating across the waveguides. We envisage further applications to quantum thermodynamics, microwave photodetection, and photon-photon gates.
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Submitted 24 February, 2022;
originally announced February 2022.
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Qubit-compatible substrates with superconducting through-silicon vias
Authors:
K. Grigoras,
N. Yurttagül,
J. -P. Kaikkonen,
E. T. Mannila,
P. Eskelinen,
D. P. Lozano,
H. -X. Li,
M. Rommel,
D. Shiri,
N. Tiencken,
S. Simbierowicz,
A. Ronzani,
J. Hätinen,
D. Datta,
V. Vesterinen,
L. Grönberg,
J. Biznárová,
A. Fadavi Roudsari,
S. Kosen,
A. Osman,
M. Prunnila,
J. Hassel,
J. Bylander,
J. Govenius
Abstract:
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the ar…
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We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
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Submitted 8 November, 2022; v1 submitted 25 January, 2022;
originally announced January 2022.
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Building Blocks of a Flip-Chip Integrated Superconducting Quantum Processor
Authors:
Sandoko Kosen,
Hang-Xi Li,
Marcus Rommel,
Daryoush Shiri,
Christopher Warren,
Leif Grönberg,
Jaakko Salonen,
Tahereh Abad,
Janka Biznárová,
Marco Caputo,
Liangyu Chen,
Kestutis Grigoras,
Göran Johansson,
Anton Frisk Kockum,
Christian Križan,
Daniel Pérez Lozano,
Graham Norris,
Amr Osman,
Jorge Fernández-Pendás,
Alberto Ronzani,
Anita Fadavi Roudsari,
Slawomir Simbierowicz,
Giovanna Tancredi,
Andreas Wallraff,
Christopher Eichler
, et al. (2 additional authors not shown)
Abstract:
We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods…
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We have integrated single and coupled superconducting transmon qubits into flip-chip modules. Each module consists of two chips -- one quantum chip and one control chip -- that are bump-bonded together. We demonstrate time-averaged coherence times exceeding $90\,μs$, single-qubit gate fidelities exceeding $99.9\%$, and two-qubit gate fidelities above $98.6\%$. We also present device design methods and discuss the sensitivity of device parameters to variation in interchip spacing. Notably, the additional flip-chip fabrication steps do not degrade the qubit performance compared to our baseline state-of-the-art in single-chip, planar circuits. This integration technique can be extended to the realisation of quantum processors accommodating hundreds of qubits in one module as it offers adequate input/output wiring access to all qubits and couplers.
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Submitted 14 June, 2022; v1 submitted 5 December, 2021;
originally announced December 2021.
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High Quality 3-Dimensional Aluminum Microwave Cavities
Authors:
M. Kudra,
J. Biznárová,
F. Roudsari,
J. J. Burnett,
D. Niepce,
S. Gasparinetti,
B. Wickman,
P. Delsing
Abstract:
We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different pu…
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We present a comprehensive study of internal quality factors in superconducting stub-geometry 3-dimensional cavities made of aluminum. We use wet etching, annealing and electrochemichal polishing to improve the as machined quality factor. We find that the dominant loss channel is split between two-level system loss and an unknown source with 60:40 proportion. A total of 17 cavities of different purity, resonance frequency and size were studied. Our treatment results in reproducible cavities, with ten of them showing internal quality factors above 80 million at a power corresponding to an average of a single photon in the cavity. The best cavity has an internal quality factor of 115 million at single photon level.
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Submitted 3 June, 2020;
originally announced June 2020.
